Patent classifications
C03C3/142
Thick-Film Aluminum Electrode Paste with Pretreatment before Metal Plating for Fabricating Chip Resistor
A thick-film aluminum (Al) electrode paste is provided to fabricate a chip resistor. The paste is a mixture of a vanadium-zinc-boron series glass (V.sub.2O.sub.5ZnOB.sub.2O.sub.3 or BaOZnOB.sub.2O.sub.3) along with a metal oxide, aluminum granules, and an organic additive, whose proportions are separately 330 wt %, 0.115 wt %, 5070 wt %, and 1020 wt %. After being stirred through three rollers and filtered, the paste is pasted on an alumina ceramic substrate. The pasted substrate is dried and sintered for forming a thick-film aluminum electrode. Meanwhile, before processing metal plating that follows, an anti-plating pretreatment is performed. Therein, surface irregularities and nonconductive alumina on the surface are removed. Thus, the electrode obtains smooth flat surface and low oxygen content. The characteristics of the chip resistor using the thick-film aluminum electrode are equivalent to those using thick-film printed silver electrodes and those using thick-film printed copper electrodes sintered in a reducing atmosphere.
Thick-film pastes containing lead-tellurium-lithium-oxides, and their use in the manufacture of semiconductor devices
The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-lithium-oxide dispersed in an organic medium.
METHOD FOR PRODUCING HERMETIC PACKAGE, AND HERMETIC PACKAGE
A method of producing a hermetic package of the present invention includes the steps of: preparing a ceramic base; preparing a glass cover; forming, on the glass cover, a sealing material layer having a total light transmittance in a thickness direction at a wavelength of laser light to be radiated of 10% or more and 80% or less; arranging the glass cover and the ceramic base so that the glass cover and the ceramic base are laminated on each other through intermediation of the sealing material layer; and irradiating the sealing material layer with the laser light from a glass cover side to soften and deform the sealing material layer, to thereby hermetically integrate the ceramic base and the glass cover with each other to obtain a hermetic package.
Composition for forming solar cell electrode and electrode prepared using the same
A composition for solar cell electrodes including a conductive powder, a glass frit, and an organic vehicle. The glass frit contains tellurium (Te), sodium (Na), zinc (Zn), and at least one of lead (Pb) and bismuth (Bi). A molar ratio of the sum of lead and bismuth to zinc ranges from about 1 to about 20. A molar ratio of tellurium to sodium ranges from about 1 to about 15.
COMPOSITION FOR FORMING SOLAR CELL ELECTRODE AND ELECTRODE PREPARED USING THE SAME
A composition for solar cell electrodes includes a conductive powder, a glass frit, and an organic vehicle. The glass frit contains about 20 mol % to about 40 mol % of an alkali metal, about 20 mol % to about 30 mol % of zinc (Zn), and about 7 mol % to about 20 mol % of magnesium (Mg) in terms of oxide content.
Glass powder blend, glass powder paste and photoelectric package
The present invention provides a glass powder blend comprising glass powder and additives, wherein the additives comprise copper powder, and the copper powder accounts for 2-3 mass % based on the total amount of the glass powder blend in 100 mass %. The present invention also provides a glass powder paste and a photoelectric package. Due to the addition of copper powder to the glass powder, the melting point of the glass powder blend can be decreased, thereby lowering the temperature for melting the glass powder blend by using laser, and reducing the thermal stress generated during encapsulation.
SILVER CONDUCTIVE PASTE COMPOSITION
Described herein is a conductive composition that includes a silver powder, an organic medium, an optional inorganic additive, elemental thallium and/or a thallium containing compound, elemental tellurium and/or a tellurium containing compound, and optionally, a glass frit. The composition may be a paste. Other inorganic additives and glass may be present in the composition. Further described are devices such as semiconductors, photovoltaic devices, and solar cells in which the substrates thereof are coated with the conductive compositions. Such devices exhibit improved efficiency.
Thick-film pastes containing lead- and tellurium-oxides, and their use in the manufacture of semiconductor devices
The present invention provides a thick-film paste for printing the front-side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-oxide dispersed in an organic medium.
THICK-FILM PASTES CONTAINING LEAD- AND TELLURIUM-OXIDES, AND THEIR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES
The present invention provides a thick-film paste for printing the front-side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-oxide dispersed in an organic medium.
POWDER
[Summary] One embodiment of the present invention provides a powder. The powder includes ZnO, Al2O3, and SiO2 as components. In a ternary phase diagram of the ZnO, the Al2O3, and the SiO2, the powder has a composition included in a rectangular area having as the four corners thereof (ZnO (mol %), Al2O3 (mol %), SiO2 (mol %))=(24, 13, 63), (19, 18, 63), (37, 12, 51), (32, 17, 51). The ratio (S001/S101) of the area S001 of a peak appearing in the range of 15??2??17? and the area S101 of a peak appearing in the range of 24??2??27? in an X-ray diffraction pattern is 0.001-0.07.