C04B2235/3239

POLYCRYSTALLINE CUBIC BORON NITRIDE MATERIAL

This disclosure relates to a high cBN content polycrystalline cubic boron nitride, PCBN, material. The binder matrix material comprises 19 to 50 wt. % chromium, or a compound thereof.

Multilayer ceramic capacitor and manufacturing method for same

A multilayer ceramic capacitor (10) has a laminate body (20) constituted by dielectric layers (17) and internal electrode layers (18) stacked alternately. The dielectric layers (17) contain (Ba.sub.(1-x-y)Ca.sub.xSr.sub.y).sub.m(Ti.sub.(1-z)Zr.sub.z)O.sub.3, where 0.03≤x≤0.16, 0≤y≤0.02, 0<z≤0.02, 0.99≤m≤1.02, as a primary component, and an R oxide (R is a rare earth element) by 1.0 to 4.0 mol in equivalent element, an Mg compound by 0.2 to 2.5 mol in equivalent element, an Mn compound by 0.1 to 1.0 mol in equivalent element, a Zr compound by 0.1 to 2.0 mol in equivalent element, a V compound by 0.05 to 0.3 mol in equivalent element, and an Si compound by 0.2 to 5.0 mol in equivalent element, per 100 mol of the primary component. The multilayer ceramic capacitor can offer excellent DC bias properties and ensure high reliability.

DIELECTRIC CERAMIC COMPOSITION AND CAPACITOR COMPONENT

A capacitor component includes: a body including a dielectric layer and an internal electrode layer; and an external electrode disposed on the body, and connected to the internal electrode layer. A surface color of the body is R≤30, G≤30, B≤40 based on R/G/B, and a dielectric constant of the dielectric layer is 2000 or more and 4000 or less.

ZIRCONIA COMPOSITION, ZIRCONIA SEMI-SINTERED BODY AND ZIRCONIA SINTERED BODY, AS WELL AS DENTAL PRODUCT
20180002235 · 2018-01-04 · ·

There are provided zirconia composition, zirconia semi-sintered body and zirconia sintered body, and dental product in which defect-generation is suppressed and transparency varies. The zirconia sintered body contains 4 mol % to 7 mol % of yttria as stabilizer. The zirconia sintered body contains shielding material. The zirconia sintered body comprises first region and second region having a higher content ratio of the shielding material than the first region. Difference between content ratio of yttria in the first region and that of yttria in the second region is 1 mol % or less.

METHOD OF PRODUCING DIELECTRIC MATERIAL
20180009714 · 2018-01-11 ·

A method of producing a dielectric material by preparing a slurry by mixing a dielectric powder, water, one of an organic-acid metal salt and an inorganic metal salt, and an organic silicon compound, causing the slurry to come into contact with an anion exchange resin to remove an anion derived from the one of the organic-acid metal salt and the inorganic metal salt from the slurry, and drying the slurry to obtain the dielectric material.

Multilayer electronic component

A multilayer electronic component that includes a stacked body having therein a plurality of dielectric layers including a CZ-based perovskite phase and an element M1, a plurality of internal electrode layers including Cu, and an interface layer including the element M1 in at least a portion of an interface with the plurality of internal electrode layers. Element M1 is an element that has a binding energy between CZ and Cu via the element M1 of less than or equal to −9.8 eV by first-principles calculation using a pseudopotential method. When amounts of elements included in the dielectric layers are expressed as parts by mol, a ratio m1 of an amount of the element M1 to an amount of the Zr in the interface layer is 0.03≤m1≤0.25.

SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME
20180012739 · 2018-01-11 ·

A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.

Modified scheelite material for co-firing

Disclosed herein are embodiments of low temperature co-fireable scheelite materials which can be used in combination with high dielectric materials, such as nickel zinc ferrite, to form composite structures, in particular for isolators and circulators for radiofrequency components. In some embodiments, the scheelite material can include aluminum oxide for temperature expansion regulation.

Dielectric ceramic composition and ceramic electronic component
11702368 · 2023-07-18 · ·

A dielectric ceramic composition including a first component and a second component. The first component comprises an oxide of Ca of 0.00 mol % to 35.85 mol % an oxide of Sr of 0.00 mol % to 47.12 mol %, an oxide of Ba of 0.00 mol % to 51.22 mol %, an oxide of Ti of 0.00 mol % to 17.36 mol %, an oxide of Zr of 0.00 mol % to 17.36 mol %, an oxide of Sn of 0.00 mol % to 2.60 mol %, an oxide of Nb of 0.00 mol % to 35.32 mol %, an oxide of Ta of 0.00 mol % to 35.32 mol %, and an oxide of V of 0.00 mol % to 2.65 mol %. The second component includes (by mass) at least (a) an oxide of Mn of 0.005% to 3.500% and (b) one or both of an oxide of Cu of 0.080% to 20.000% and an oxide of Ru of 0.300% to 45.000%.

Low firing temperature dielectric materials designed to be co-fired with high bismuth garnet ferrites for miniaturized isolators and circulators

Disclosed herein are embodiments of low temperature co-fireable dielectric materials which can be used in conjunction with high dielectric materials to form composite structures, in particular for isolators and circulators for radiofrequency components. Embodiments of the low temperature co-fireable dielectric materials can be scheelite or garnet structures, for example, bismuth vanadate. Adhesives and/or glue is not necessary for the formation of the isolators and circulators.