The disclosure relates to tiles or slabs comprising a fired ceramic material which has a chemical composition with a particular combination of oxides; to a method for the manufacture of said tiles or slabs; and to the use thereof for construction or decoration applications.

A dielectric composition that contains a first complex oxide represented by (Bi.sub.xNa.sub.1−x)TiO.sub.3—CaTiO.sub.3 and having a perovskite structure as a main component; and at least one second complex oxide having a perovskite structure selected from the group consisting of BaZrO.sub.3, SrZrO.sub.3, CaZrO.sub.3, NaNbO.sub.3, and NaTaO.sub.3 as an auxiliary component. A tolerance factor t when the at least one second complex oxide is BaZrO.sub.3, NaNbO.sub.3, or NaTaO.sub.3 is 0.9016≤t≤0.9035, a tolerance factor t when the at least one second complex oxide is SrZrO.sub.3 is 0.9005≤t≤0.9025, and a tolerance factor t when the at least one second complex oxide is CaZrO.sub.3 is 0.9000 t<0.9020.

Setter plates are fabricated from Li-stuffed garnet materials having the same, or substantially similar, compositions as a garnet Li-stuffed solid electrolyte. The Li-stuffed garnet setter plates, set forth herein, reduce the evaporation of Li during a sintering treatment step and/or reduce the loss of Li caused by diffusion out of the sintering electrolyte. Li-stuffed garnet setter plates, set forth herein, maintain compositional control over the solid electrolyte during sintering when, upon heating, lithium is prone to diffuse out of the solid electrolyte.

There are provided zirconia composition, zirconia semi-sintered body and zirconia sintered body, and dental product in which defect-generation is suppressed and transparency varies. The zirconia sintered body contains 4 mol % to 7 mol % of yttria as stabilizer. The zirconia sintered body contains shielding material. The zirconia sintered body comprises first region and second region having a higher content ratio of the shielding material than the first region. Difference between content ratio of yttria in the first region and that of yttria in the second region is 1 mol % or less.

The present invention provides a high thermal conductive silicon nitride sintered body having a thermal conductivity of 50 W/m.Math.K or more and a three-point bending strength of 600 MPa or more, wherein when an arbitrary cross section of the silicon nitride sintered body is subjected to XRD analysis and highest peak intensities detected at diffraction angles of 29.3±0.2°, 29.7±0.2°, 27.0±0.2°, and 36.1±0.2° are expressed as I.sub.29.3°, I.sub.29.7°, I.sub.27.0°, and I.sub.36.1°, a peak ratio (I.sub.29.3°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.01 to 0.08, and a peak ratio (I.sub.29.7°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.02 to 0.16. Due to above configuration, there can be provided a silicon nitride sintered body having a high thermal conductivity of 50 W/m.Math.K or more, and excellence in insulating properties and strength.

Provided is an inorganic structure including a plurality of zirconium silicate particles; and a binding part that covers a surface of each of the zirconium silicate particles and binds the zirconium silicate particles together. The binding part contains an amorphous compound containing silicon, a metallic element other than silicon, and oxygen, and contains substantially no alkali metal, B, V, Te, P, Bi, Pb and Zn. Also provided is a method for producing an inorganic structure including: a step for obtaining a mixture by mixing a plurality of zirconium silicate particles, a plurality of amorphous silicon dioxide particles, and an aqueous solution containing a metallic element other than silicon; and a step for pressurizing and heating the mixture under conditions of a pressure of 10 to 600 MPa and a temperature of 50 to 300° C.

A refractory object may include a zircon body that is intentionally doped with a dopant including an alkaline earth element and aluminum. The refractory object can have an improved creep deformation rate. In an embodiment, the refractory object can have a creep deformation rate of not greater than about 1.8 E-5 h.sup.−1 at a temperature of 1350° C. and a stress of 2 MPa. In another embodiment, the zircon body may include an amorphous phase including an alkaline earth metal element.

A piezoelectric material composition, a method of manufacturing the same, a piezoelectric device, and apparatus including the piezoelectric device. The piezoelectric device may include a piezoelectric device layer including a first material and a second material surrounded by the first material, a first electrode portion disposed at a first surface of the piezoelectric device layer, and a second electrode portion disposed at a second surface of the piezoelectric device layer opposite to the first surface, wherein the piezoelectric device layer comprises a piezoelectric material composition represented by Chemical Formula 1: 0.96(Na.sub.aK.sub.1-a)(Nb.sub.b(T.sub.1-b))O.sub.3-(0.04-x)MZrO.sub.3-x(Bi.sub.cAg.sub.1-c)ZrO.sub.3+d mol % NaNbO.sub.3, wherein T is Sb or Ta, M is Sr, Ba or Ca, a is 0.4≤a≤0.6, b is 0.90≤b≤0.98, c is 0.4≤c≤0.6, d is 0≤d≤5.0, and x is 0≤x≤0.04 and wherein T is Sb or Ta and M is Sr, Ba, or Ca.

The present invention relates to a ceramic solid electrolyte, which is a key component of an all-solid-state lithium secondary battery, for improving safety, and a method for synthesizing the same. The present invention relates to an oxide-based conductive ceramic of a new NASICON structure of the chemical formula Li.sub.1+xAl.sub.xX.sub.2−xP.sub.3O.sub.12 (X is Zr, Si, Sn, or Y, 0<x<2) or Li.sub.1+xZr.sub.2X.sub.xP.sub.3−xO.sub.12 (X=Si, Sn, Ge, or Y, 1.5≤x≤2.3). The present invention relates to a method for manufacturing an oxide-based conductive ceramic having the above novel NASICON structure.

Provided is a piezoelectric ceramics having a gradual change in piezoelectric constant depending on an ambient temperature. Specifically, provided is a single-piece piezoelectric ceramics including as a main component a perovskite-type metal oxide represented by a compositional formula of ABO.sub.3, wherein an A site element in the compositional formula contains Ba and M.sub.1, the M.sub.1 being formed of at least one kind selected from the group consisting of Ca and Bi, wherein a B site element in the compositional formula contains T1 and M.sub.2, the M.sub.2 being formed of at least one kind selected from the group consisting of Zr, Sn, and Hf, wherein concentrations of the M.sub.1 and the M.sub.2 change in at least one direction of the piezoelectric ceramics, and wherein increase and decrease directions of concentration changes of the M.sub.1 and the M.sub.2 are directions opposite to each other.