A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.

The present invention provides a niobium oxide sintered compact having a composition of NbO.sub.x (2<x<2.5), and specifically provides a niobium oxide sintered compact which can be applied to a sputtering target for forming a high-quality resistance change layer for use in ReRAM. In particular, the present invention aims to provide a high-density niobium oxide sintered compact suitable for stabilizing the sputtering process.

The present disclosure discloses a rare earth tantalate ceramic resisting corrosion of a low melting point oxide. A general chemical formula of the ceramic is RETaO.sub.4. A method for preparing the ceramic includes: weighing RE.sub.2O.sub.3 powder and Ta.sub.2O.sub.5 powder and adding to a solvent to mix, and ball milling the mixed solution with a ball mill to obtain powder A; drying the powder A, and sieving the powder A for a first time to obtain powder B; placing the powder B in a mold for compaction, pre-sintering the powder B to form a block C, cooling the block C to room temperature, grounding the block C with a grinder, and sieving the block C for a second time to obtain powder D; and sintering the powder D to obtain the rare earth tantalate ceramic. The ceramic has high density and strong corrosion resistance to low melting point oxides.

A ceramic material including Co.sub.0.5Ti.sub.0.5TaO.sub.4. The ceramic material is prepared as follows: 1) weighting and mixing raw powders of Co.sub.2O.sub.3, TiO.sub.2 and Ta.sub.2O.sub.5 proportioned according to the chemical formula of Co.sub.0.5Ti.sub.0.5TaO.sub.4, to yield a mixture; 2) mixing the mixture obtained in 1), zirconia balls, and deionized water according to a mass ratio of 1:4-6:3-6, ball-milling for 6-8 h, drying at 80-120° C., sieving with a 60-200 mesh sieve, calcining in air atmosphere at 800-1100° C. for 3-5 h, to yield powders comprising a main crystalline phase of Co.sub.0.5Ti.sub.0.5TaO.sub.4; and 3) mixing the powders obtained in 2), zirconia balls, and deionized water according to a mass ratio of 1:3-5:2-4, ball-milling for 4-6 h, and drying at 80-100° C.; adding a 2-5 wt. % of polyvinyl alcohol solution to a resulting product, granulating, sintering resulting granules at 1000-1100° C. in air atmosphere for 4-6 h.

A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.

A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.

A ceramic material including Co.sub.0.5Ti.sub.0.5TaO.sub.4. The ceramic material is prepared as follows: 1) weighting and mixing raw powders of Co.sub.2O.sub.3, TiO.sub.2 and Ta.sub.2O.sub.5 proportioned according to the chemical formula of Co.sub.0.5Ti.sub.0.5TaO.sub.4, to yield a mixture; 2) mixing the mixture obtained in 1), zirconia balls, and deionized water according to a mass ratio of 1:4-6:3-6, ball-milling for 6-8 h, drying at 80-120 C., sieving with a 60-200 mesh sieve, calcining in air atmosphere at 800-1100 C. for 3-5 h, to yield powders comprising a main crystalline phase of Co.sub.0.5Ti.sub.0.5TaO.sub.4; and 3) mixing the powders obtained in 2), zirconia balls, and deionized water according to a mass ratio of 1:3-5:2-4, ball-milling for 4-6 h, and drying at 80-100 C.; adding a 2-5 wt. % of polyvinyl alcohol solution to a resulting product, granulating, sintering resulting granules at 1000-1100 C. in air atmosphere for 4-6 h.

A metal oxide macroscopic fiber and a preparation method thereof, the method including: adding, as a spinning dope, an anionic metal oxide aqueous colloidal solution into wet spinning equipment, extruding the spinning dope from the spinning equipment into a thread, injecting the extruded thread into a coagulating bath containing a flocculating agent to obtain as-spun fiber, and repeatedly washing the resulted as-spun fiber with deionized water and drying same, thereby obtaining a metal oxide fiber. Said method makes the process simple and controllable, being adaptable to production on a large scale. The prepared metal oxide fiber having special physical and chemical properties is widely applicable in terms of intelligent spinning, biomedicine, energy recycling and conversion, and the field of microelectronic devices and the like.

The present invention provides a niobium oxide sintered compact having a composition of NbO.sub.x (2<x<2.5), and specifically provides a niobium oxide sintered compact which can be applied to a sputtering target for forming a high-quality resistance change layer for use in ReRAM. In particular, the present invention aims to provide a high-density niobium oxide sintered compact suitable for stabilizing the sputtering process.

A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.