A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.

A pore-free ceramic is provided that has a high modulus of elasticity and a low coefficient of thermal expansion. A process for producing a corresponding ceramic is also provided. The pore free ceramic is a dimensionally stable substrate material in applications subjected to temperature gradients including semiconductor manufacture.

A solid electrolyte, in which a part of an element contained in a mobile ion-containing material is substituted, and an occupied impurity level that is occupied by electrons or an unoccupied impurity level that is not occupied by electrons is provided between a valence electron band and a conduction band of the mobile ion-containing material, and a smaller energy difference out of an energy difference between a highest level of energy in the occupied impurity level and an energy and a LUMO level difference between a lowest level of energy in the unoccupied impurity level and a HOMO level is greater than 0.3 eV.

A selection method includes: obtaining or providing multilayer ceramic capacitors each having a multilayer structure in which each of a plurality of ceramic dielectric layers and each of a plurality of internal electrode layers are alternately stacked; measuring a ratio of (a current value at 10 V/μm when a direct voltage is applied to a plurality of ceramic dielectric layers at 125 degrees C.)/(a current value at 10 V/μm when a direct voltage is applied to the plurality of the ceramic dielectric layers at 85 degrees C.), with respect to each multilayer ceramic capacitor; determining whether the ratio is in a predetermined range; and selecting a multilayer ceramic capacitor or multilayer ceramic capacitors each having a ratio in the predetermined range as a desired multilayer ceramic capacitor.

Provided is a dielectric ceramic composition including a first component and a second component, wherein the first component comprises an oxide of Ca of 0.00 mol % to 35.85 mol % an oxide of Sr of 0.00 mol % to 47.12 mol %, an oxide of Ba of 0.00 mol % to 51.22 mol %, an oxide of Ti of 0.00 mol % to 17.36 mol %, an oxide of Zr of 0.00 mol % to 17.36 mol %, an oxide of Sn of 0.00 mol % to 2.60 mol %, an oxide of Nb of 0.00 mol % to 35.32 mol %, an oxide of Ta of 0.00 mol % to 35.32 mol %, and an oxide of V of 0.00 mol % to 2.65 mol %, and the second component includes at least (a) an oxide of Mn of 0.005% by mass to 3.500% by mass and (b) an oxide of Cu and/or an oxide of Ru.

The present invention relates to a conductive porous ceramic substrate and a method of manufacturing the same, and more particularly to a conductive porous ceramic substrate, in which a porous ceramic substrate used as a chuck or stage for fixing a thin semiconductor wafer substrate or display substrate through vacuum adsorption is imparted with antistatic performance so as to prevent the generation of static electricity, and a method of manufacturing the same.

Embodiments relate to an improved hydroflux assisted densification process that introduces a transport phase (formed by the introduction of water during the process to suppress melting temperatures) for sintering, the transport phase being a non-aqueous solution. The process can facilitate sintering at low temperature ranges (at or below 300° C.) to yield densification>90% without the need for additional post-processing steps that otherwise would be needed if conventional processes were used. Control of the pressures and water content used during the process can enhance densification mechanisms related to dissolution-reprecipitation, allowing for a greater range of compositional spectra of materials that can be densified, a reduction of the amount of transport phase needed, a reduction of impurities and an improvement of properties in the densified material. Certain hydrated acetate powders can be used to generate a hydroxide mixture flux that is better for the low-temperature densification process.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

Set forth herein are garnet material compositions, e.g., lithium-stuffed garnets and lithium-stuffed garnets doped with alumina, which are suitable for use as electrolytes and catholytes in solid state battery applications. Also set forth herein are lithium-stuffed garnet thin films having fine grains therein. Disclosed herein are novel and inventive methods of making and using lithium-stuffed garnets as catholytes, electrolytes and/or anolytes for all solid state lithium rechargeable batteries. Also disclosed herein are novel electrochemical devices which incorporate these garnet catholytes, electrolytes and/or anolytes. Also set forth herein are methods for preparing novel structures, including dense thin (<50 um) free standing membranes of an ionically conducting material for use as a catholyte, electrolyte, and, or, anolyte, in an electrochemical device, a battery component (positive or negative electrode materials), or a complete solid state electrochemical energy storage device. Also, the methods set forth herein disclose novel sintering techniques, e.g., for heating and/or field assisted (FAST) sintering, for solid state energy storage devices and the components thereof.

An antimicrobial material including a substrate and an antimicrobial mixed metal oxide, mixed metal sulfide, or mixed metal oxysulfide in and/or on the substrate is described, as well as antimicrobial coating materials and coatings formed therefrom. The antimicrobial material may be constituted in an antimicrobial surface of a surface-presenting substrate, to combat transmission and spread of microbial disease, e.g., disease mediated by microbial pathogens such as bacteria, viruses, and fungi. Antimicrobial mixed metal oxide, mixed metal sulfide, or mixed metal oxysulfide as described may be contacted with microorganisms to effect inactivation thereof.