A coating material for a silicon carbide-based honeycomb structure, the coating material including from 20 to 75% by mass of ceramic powder (A), the ceramic powder (A) including from 55 to 95% by mass of silicon carbide and from 5 to 30% by mass of silicon dioxide as chemical components.

A cubic boron nitride sintered material includes: more than or equal to 50 volume % and less than 80 volume % of cubic boron nitride grains; and more than 20 volume % and less than or equal to 50 volume % of a binder phase, and when an oxygen content is measured in a direction perpendicular to an interface between cubic boron nitride grains using TEM-EDX, a first region having an oxygen content larger than an average value of an oxygen content of a cubic boron nitride grain exists, the interface exists in the first region, and a length of the first region along the direction perpendicular to the interface is more than or equal to 0.1 nm and less than or equal to 10 nm.

A polycrystalline super hard construction has a first region having a body of thermally stable polycrystalline super hard material having a plurality of intergrown grains of super hard material; a second region forming a substrate having a hard phase and a binder phase; and a third region interposed between the first and second regions. The third region includes a composite material having a first phase comprising a plurality of non-intergrown grains of super hard material, and a matrix material. A fourth region interposed between the second and third region has a major proportion having one or more components of the binder material of the second region, and one or more reaction products between the binder material of the second region and one or more components of the third region.

It is an object to provide a ferroelectric thin film having much higher ferroelectric properties than conventional Sc-doped ferroelectric thin film constituted by aluminum nitride and also having stability when applied to practical use, and also to provide an electronic device using the same.

There are provided a ferroelectric thin film represented by a chemical formula M1.sub.1-XM2.sub.XN, wherein M1 is at least one element selected from Al and Ga, M2 is at least one element selected from Mg, Sc, Yb, and Nb, and X is within a range of 0 or more and 1 or less, and also an electronic device using the same.

A cutting tool (1) formed of a silicon nitride-based sintered body (2) including a matrix phase (3), a hard phase (4), and a grain boundary phase (10) in which a glass phase (11) and a crystal phase (12) exist. The sintered body (2) contains yttrium in an amount of 5.0 wt % to 15.0 wt % in terms of an oxide, and contains titanium nitride as the hard phase (4) in an amount of 5.0 wt % to 25.0 wt %. In an X-ray diffraction peak, a halo pattern appears at 2θ ranging from 25° to 35° in an internal region of the sintered body (2). A ratio B/A of a maximum peak intensity B to a maximum peak intensity A satisfies 0.11≤B/A≤0.40 . . . Expression (1) in a surface region of the sintered body (2), and satisfies 0.00≤B/A≤0.10 . . . Expression (2) in the internal region of the sintered body (2).

A cubic boron nitride sintered material includes: 0 to 85 volume % of cubic boron nitride grains; and a binder phase, wherein the binder phase includes at least one selected from a group consisting of one or more first compounds and a solid solution originated from the first compounds, the cubic boron nitride grains include, on number basis, more than or equal to 50% of cubic boron nitride grains each having an equivalent circle diameter of more than 0.5 μm, and includes, on number basis, less than or equal to 50% of cubic boron nitride grains each having an equivalent circle diameter of more than 2 μm, and when a mass of the cubic boron nitride grains is assumed as 100 mass %, a total content of lithium, magnesium, calcium, strontium, beryllium, and barium in the cubic boron nitride grains is less than 0.001 mass %.

A cubic boron nitride sintered material tool contains a plurality of cBN grains. cBN grains located on a surface of the cutting edge contain a cubic boron nitride phase, and a hexagonal boron nitride phase. When a ratio I.sub.π*/I.sub.σ* between an intensity of a π* peak derived from a π bond of hBN in the hexagonal boron nitride phase and an intensity of a σ* peak derived from a σ bond of hBN in the hexagonal boron nitride phase and a σ bond of cBN in the cubic boron nitride phase is determined by measuring an energy loss associated with excitation of K-shell electrons of boron, the ratio I.sub.π*/I.sub.σ* of the cBN grain on the surface of the cutting edge is 0.1 to 2, and the ratio I.sub.π*/I.sub.σ* of the cBN grain at a depth position of 5 μm from the surface of the cutting edge is 0.001 to 0.1.

The present invention relates to the field of new materials technology, in particular to carbon nitride composite ceramic tool materials, preparation method and cutting tools thereof. The raw materials comprise carbon nitride, titanium carbonitride, molybdenum, nickel and cobalt, carbon nitride as the matrix phase, titanium carbonitride as the reinforcing phase are added to the carbon nitride based composite ceramic materials, with molybdenum, nickel and cobalt as a suitable sintering aid, dense composite tool material is obtained with vacuum hot press sintering method. The prepared carbon nitride based composite ceramic tool materials boast the advantages of low cost, high hardness, high bending strength and high fracture toughness, which is an important way to promote the innovation, development and popularization of carbon nitride materials.

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

Polycrystalline cubic boron nitride, PCBN, material and methods of making PCBN. A method includes providing a matrix precursor powder comprising particles having an average particle size no greater than 250 nm, providing a cubic boron nitride, cBN, powder comprising particles of cBN having an average particle size of at least 0.2 intimately mixing the matrix precursor powder and the cBN powder, and sintering the intimately mixed powders at a temperature of at least 1100° C. and a pressure of at least 3.5 GPa to form the PCBN material comprising particles of cubic boron nitride, cBN dispersed in a matrix material.