Antiballistic armour plate includes a ceramic body including a hard material, provided, on its inner face, with a back energy-dissipating coating. The ceramic body is monolithic. The constituent material of the ceramic body includes grains of ceramic material having a Vickers hardness that is higher than 15 GPa, and a matrix binding the grains, the matrix including a silicon nitride phase and/or a silicon oxynitride phase, the matrix representing between 5 and 40% by weight of the constituent material of the ceramic body. The maximum equivalent diameter of the grains of ceramic material is smaller than or equal to 800 micrometres. The constituent material of the ceramic body has an open porosity that is higher than 5% and lower than 14%. The metallic silicon content in the material, expressed per mm of thickness of the body, is lower than 0.5% by weight.

A semiconductor device comprising: a semiconductor component; a diamond heat spreader; and a metal bond, wherein the semiconductor component is bonded to the diamond heat spreader via the metal bond, wherein the metal bond comprises a layer of chromium bonded to the diamond heat spreader and a further metal layer disposed between the layer of chromium and the semiconductor component, and wherein the semiconductor component is configured to operate at an areal power density of at least 1 kW/cm.sup.2 and/or a linear power density of at least 1 W/mm.

A shock absorbing member 50 having a ceramic bonded body 15 having: a plurality of first sheet-like members 5 each having a ceramic containing 60 mass % or more of boron carbide and each having a thickness of 0.1 to 50 mm; and a bonding layer arranged between the first sheet-like members 5 adjacent to each other, the bonding layer bonding surfaces to be bonded facing each other of the first sheet-like members adjacent to each other, wherein the bonding layer has a bonding material containing at least one metal selected from the group consisting of aluminum, copper, silver, and gold.

A method of producing low CTE graphite electrodes from needle coke formed from a coal tar distillate material having a relatively high initial boiling point.

A nitrogen-containing porous carbon material, and a capacitor and a manufacturing method thereof are provided. A carbon material, a macromolecular material and a modified material are mixed into a preform. The modified material includes nitrogen. A formation process is performed on the preform to obtain a formed object. High-temperature sintering is performed on the formed object to decompose and remove a part of the macromolecular material, while the other part of the macromolecular material and the carbon material together form a backbone structure including a plurality of pores. As such, the nitrogen becomes attached to the backbone structure to form a hydrogen-containing functional group to further obtain the nitrogen-containing porous carbon material. The nitrogen-containing porous carbon material may form a first nitrogen-containing porous carbon plate and a second nitrogen-containing porous carbon plate, which are placed in seawater to form a storage capacitor for seawater.

A sintered body containing polycrystalline grains of a metal oxynitride containing at least two metal elements, wherein Ba and at least one metal element of a crystal phase of the sintered body are contained in a triple point that is not a void between the polycrystalline grains. A method for producing the sintered body includes sintering a mixture of at least a metal oxynitride as a main component and a sintering aid containing cyanamide in an atmosphere containing nitrogen or a rare gas or in a reduced-pressure atmosphere of 10 Pa or less while applying a mechanical pressure with a retention time at a maximum heating temperature during the sintering set to 1 minute to 10 minutes.

A silicon nitride substrate includes silicon nitride and magnesium, in which when a surface of the silicon nitride substrate is analyzed with an X-ray fluorescence spectrometer under the specific Condition I, XB/XA is 0.8 or more and 1.0 or less.

Provided is a method for manufacturing a high-density artificial graphite electrode without substantially changing a particle size or a proportion of needle coke used, increasing an amount of binder pitch, or performing extrusion molding at a high molding pressure. The method for manufacturing a high-density artificial graphite electrode is kneading binder pitch into needle coke, performing extrusion molding thereof, and then calcining and graphitizing thereof, wherein needle coke obtained by performing coke shape changing treatment for at least some of pulverized needle coke to be used, thereby increasing a ratio of an enveloping perimeter/a perimeter by 1% or more as compared with a value before the changing is used. Here, the enveloping perimeter is a length of a perimeter when apexes of convex portions of the pulverized needle coke are connected to each other via the shortest distance, and the perimeter is a length of a perimeter of a particle.

A silicon carbide-graphite composite is described, including (i) interior bulk graphite material and (ii) exterior silicon carbide matrix material, wherein the interior bulk graphite material and exterior silicon carbide matrix material inter-penetrate one another at an interfacial region therebetween, and wherein graphite is present in inclusions in the exterior silicon carbide matrix material. Such material may be formed by contacting a precursor graphite article with silicon monoxide (SiO) gas under chemical reaction conditions that are effective to convert an exterior portion of the precursor graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween. Such silicon carbide-graphite composite is usefully employed in applications such as implant hard masks in manufacturing solar cells or other optical, optoelectronic, photonic, semiconductor and microelectronic products, as well as in ion implantation system materials, components, and assemblies, such as beam line assemblies, beam steering lenses, ionization chamber liners, beam stops, and ion source chambers.

A silicon carbide-graphite composite is described, including (i) interior bulk graphite material and (ii) exterior silicon carbide matrix material, wherein the interior bulk graphite material and exterior silicon carbide matrix material inter-penetrate one another at an interfacial region therebetween, and wherein graphite is present in inclusions in the exterior silicon carbide matrix material. Such material may be formed by contacting a precursor graphite article with silicon monoxide (SiO) gas under chemical reaction conditions that are effective to convert an exterior portion of the precursor graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween. Such silicon carbide-graphite composite is usefully employed in applications such as implant hard masks in manufacturing solar cells or other optical, optoelectronic, photonic, semiconductor and microelectronic products, as well as in ion implantation system materials, components, and assemblies, such as beam line assemblies, beam steering lenses, ionization chamber liners, beam stops, and ion source chambers.