A multilayer electronic component includes a multilayer body including dielectric layers and inner electrode layers, the multilayer body including an electrode facing portion in which the inner electrode layers are laminated to face each other with the dielectric layers interposed therebetween. The multilayer body has a thickness of at least about 1.5 mm in a lamination direction, a length of at least about 3.0 mm, and a width of at least about 1.5 mm. Each of the dielectric layers includes Ba, Ti, and Cl. A Cl concentration C.sub.1 in the entire electrode facing portion satisfies about 10 wtppm<C.sub.1<about 50 wtppm. On an imaginary central axis line, a Cl concentration C.sub.2 in a central portion of the electrode facing portion and a Cl concentration C.sub.3 in both end portions of the electrode facing portion satisfy about 0.5C.sub.2≤C.sub.3<C.sub.2.

A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value ε.sub.A of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value ε.sub.B of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |ε.sub.A−ε.sub.B|≤0.1.

A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value ε.sub.A of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value ε.sub.B of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |ε.sub.A−ε.sub.B|≤0.1.

An oxide superconductor includes: REBa.sub.2Cu.sub.3O.sub.7-x (RE being one element selected from a “RE element group” of Pr, Nd, Sm, Eu, Gd, Y, Tb, Dy, Ho, Er, Tm, Yb, and Lu). The RE includes at least three, types of metallic elements (M1, M2, and M3), and the three types of metallic elements are any element of the RE element group selected in order. In an oxide system satisfying R(1)≦20 mol % and R(M2)≧60 mol % and R(M3)≦20 mol %, R(M1) being an average metallic element ratio of M1 in M1+M2+M3, SD(Ms)>0.15 is satisfied at a position at 50% of an average film thickness of a cross section including the c-axis, Ms being the metallic element of not larger of R(M1) and R(M3), SD(Ms) being a standard deviation/average value of a concentration of Ms.

Methods are described to make strong, tough, and lightweight whisker-reinforced glass-ceramic composites through a self-toughening structure generated by viscous reaction sintering of a complex mixture of oxides. The invention further relates to strong, tough, and lightweight glass-ceramic composites that can be used as proppants and for other uses.

A sputtering target which is made of a magnesium oxide sintered body having a purity of not less than 99.99% or not less than 99.995% by mass %, a relative density of not less than 98%, and an average grain size of not more than 8 μm. The average grain size of the sputtering target is preferably not more than 5 μm, more preferably not more than 2 μm. A sputtered film having an excellent insulation resistance and an excellent homogeneity can be obtained by using the sputtering target.

A sintered MnZn ferrite body containing main components comprising 53.30-53.80% by mol of Fe calculated as Fe.sub.2O.sub.3, 6.90-9.50% by mol Zn calculated as ZnO, and the balance of Mn calculated as MnO, and sub-components comprising 0.003-0.020 parts by mass of Si calculated as SiO.sub.2, more than 0 parts and 0.35 parts or less by mass of Ca calculated as CaCO.sub.3, 0.30-0.50 parts by mass of Co calculated as Co.sub.3O.sub.4, 0.03-0.10 parts by mass of Zr calculated as ZrO.sub.2, and 0-0.05 parts by mass of Ta calculated as Ta.sub.2O.sub.5, pre 100 parts by mass in total of the main components (calculated as the oxides), and having an average crystal grain size of 3 μm or more and less than 8 μm and a density of 4.65 g/cm.sup.3 or more.

The present disclosure relates to a lithium ion conductive material, preferably a lithium ion conductive glass ceramic, the material including a garnet-type crystalline phase content and an amorphous phase content. The material has a sintering temperature of 1000° C. or lower, preferably 950° C. or lower and an ion conductivity of at least 1*10.sup.−5 S/cm, preferably at least 2*10.sup.−5 S/cm, preferably at least 5*10.sup.−5 S/cm, preferably at least 1*10.sup.−4 S/cm, and the amorphous phase content includes boron and/or a composition including boron.

A sintered MnZn ferrite comprising as main components 53.5 to 54.3% by mol of Fe calculated as Fe.sub.2O.sub.3, and 4.2 to 7.2% by mol of Zn calculated as ZnO, the balance being Mn calculated as MnO, and comprising as sub-components 0.003 to 0.018 parts by mass of Si calculated as SiO.sub.2, 0.03 to 0.21 parts by mass of Ca calculated as CaCO.sub.3, 0.40 to 0.50 parts by mass of Co calculated as Co.sub.3O.sub.4, 0 to 0.09 parts by mass of Zr calculated as ZrO.sub.2, and 0 to 0.015 parts by mass of Nb calculated as Nb.sub.2O.sub.5, per 100 parts by mass in total of the main components (calculated as the oxides), C.sub.(zn)/C.sub.(co) being 9.3 to 16.0 wherein C.sub.(zn) is the content of Zn contained as a main component (% by mol calculated as ZnO in the main components), and C.sub.(co) is the content of Co contained as a sub-component (parts by mass calculated as Co.sub.3O.sub.4 per 100 parts by mass in total of the main components).

A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value ε.sub.A of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value ε.sub.B of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |ε.sub.A−ε.sub.B|≤0.1.