Sintered product having a relative density of greater than 90%, with, to more than 80% of the volume thereof, a stack of flat ceramic platelets, the assembly of the platelets having a mean thickness of less than 3 μm, having a width of greater than 50 mm, and including more than 20% of alumina, as a percentage on the basis of the weight of the product. The width of the product is the largest dimension measured in the plane in which the length of the product is measured, along a direction perpendicular to the direction of the length. The length of the product is the largest dimension thereof in a plane parallel to the general plane in which the platelets extend.

A capacitor body includes a plurality of dielectric layers and a plurality of internal electrode layers stacked alternately. The plurality of dielectric layers include crystal grains of barium titanate, a rare earth element, and silicon. The crystal grains include a first crystal grain and a second crystal grain. The crystal grains each include a surface layer as a shell and an interior portion surrounded by the shell as a core. The first crystal grain has a higher concentration distribution of the rare earth element in the shell than in the core. The second crystal grain has distribution in which a ratio of a concentration of the silicon in the core and the shell is lower than a ratio of a concentration of the rare earth element in the core and the shell in the first crystal grain.

The present invention relates to a method for preparing a SiC—Si.sub.3N.sub.4 composite material and a SiC—Si.sub.3N.sub.4 composite material prepared according to same and comprises the steps of: preparing a mold; and forming a SiC—Si.sub.3N.sub.4 composite material by introducing, to the mold, a source gas comprising Si, N and C, at 1100 to 1600° C. More particularly, the present invention provides the SiC—Si.sub.3N.sub.4 composite material of high purity that is applicable to a semiconductor process, and increases the thermal shock strength of a SiC material by causing Si.sub.3N.sub.4, which is a material with a high thermal shock strength, to grow together via a CVD method.

A selection method includes: obtaining or providing multilayer ceramic capacitors each having a multilayer structure in which each of a plurality of ceramic dielectric layers and each of a plurality of internal electrode layers are alternately stacked; measuring a ratio of (a current value at 10 V/μm when a direct voltage is applied to a plurality of ceramic dielectric layers at 125 degrees C.)/(a current value at 10 V/μm when a direct voltage is applied to the plurality of the ceramic dielectric layers at 85 degrees C.), with respect to each multilayer ceramic capacitor; determining whether the ratio is in a predetermined range; and selecting a multilayer ceramic capacitor or multilayer ceramic capacitors each having a ratio in the predetermined range as a desired multilayer ceramic capacitor.

The present invention is directed to a method for producing a silicon nitride sintered material, the method including heating a molded article, which contains a silicon nitride powder having a β phase ratio of 80% or more, a dissolved oxygen content of 0.2% by mass or less, and a specific surface area of 5 to 20 m.sup.2/g, and a sintering auxiliary containing a compound having no oxygen bond, and which has an overall oxygen content controlled to be 1 to 15% by mass and an aluminum element overall content controlled to be 800 ppm or less, to a temperature of 1,200 to 1,800° C. in an inert gas atmosphere under a pressure of 0 MPa.Math.G or more and less than 0.1 MPa.Math.G to sinter the silicon nitride.

In the present invention, there can be provided a method for producing a silicon nitride sintered material, which method is advantageous in that a silicon nitride sintered material having high thermal conductivity can be obtained even when using a silicon nitride powder having a high β phase ratio and conducting calcination under normal pressure or substantially normal pressure.

The present invention provides a method of preparing bulk BSCCO-based material, the method comprising: mixing a first solution with a second solution at a pre-determined temperature to form a gel, wherein the first solution comprises salts of at least bismuth, strontium, calcium and copper and the second solution comprises a precipitating agent; drying the gel to form a xerogel; grinding the xerogel to form a homogeneous metalorganic precursor; and calcining the homogeneous metalorganic precursor to form bulk BSCCO-based materials. Further steps may enable preparation of 2D BSCCO flakes.

A ferrite sintered magnet 100 comprises M-type ferrite crystal grains 4 having a hexagonal structure, two-crystal grain boundaries 6a formed between two of the M-type ferrite crystal grains 4, and multiple-crystal grain boundaries 6b surrounded by three or more of the M-type ferrite crystal grains 4. This ferrite sintered magnet 100 contains at least Fe, Ca, B, and Si, and contains B in an amount of 0.005 to 0.9 mass % in terms of B.sub.2O.sub.3, the two-crystal grain boundaries 6a and the multiple-crystal grain boundaries 6b contain Si and Ca, and in a cross-section parallel to a c-axis of the ferrite sintered magnet, when the number of multiple-crystal grain boundaries 6b having a maximum length of 0.49 to 5 μm per cross-sectional area of 76 μm.sup.2 is N, N is 7 or less.

Embodiments relate to a method for fabricating a sintered sodium-ion material. The method involves mixing a parent phase sodium-ion compound with a secondary transient phase to form a powder mixture. The method involves applying pressure and heat above a melting point or boiling point of the secondary transient phase to drive dissolution at particle contacts and subsequent precipitation at newly formed grain boundaries. The method involves generating a sintered sodium-ion material with >90% relative density.

The invention relates to a copper-ceramic composite, comprising a ceramic substrate, which contains aluminum oxide, a coating on the ceramic substrate made of copper or a copper alloy, wherein the aluminum oxide has an average grain form factor R.sub.a(Al.sub.2O.sub.3), determined as an arithmetic average value from the form factors of the grains of the aluminum oxide, the copper or the copper alloy has an average grain form factor R.sub.a(Cu), determined as an arithmetic average of the form factors of the grains of the copper or copper alloy, and the average grain form factors of the aluminum oxide and copper or copper alloy meet the following condition: 0.5≤R.sub.a(Al.sub.2O.sub.3)/R.sub.a(Cu)≤2.0.

This disclosure relates to polycrystalline cubic boron nitride material with cBN particles in a metal matrix comprising zirconium nitride and/or vanadium nitride precipitates or grains.