A multilayer electronic component that includes a stacked body having therein a plurality of dielectric layers including a CZ-based perovskite phase and an element M1, a plurality of internal electrode layers including Cu, and an interface layer including the element M1 in at least a portion of an interface with the plurality of internal electrode layers. Element M1 is an element that has a binding energy between CZ and Cu via the element M1 of less than or equal to −9.8 eV by first-principles calculation using a pseudopotential method. When amounts of elements included in the dielectric layers are expressed as parts by mol, a ratio m1 of an amount of the element M1 to an amount of the Zr in the interface layer is 0.03≤m1≤0.25.

A seal system includes a ceramic component that has a non-core-gaspath surface region that defines a first surface roughness and a core gaspath surface region. A metallic component is situated adjacent the non-core-gaspath surface region. A coating system is disposed on the ceramic component. The coating system includes a silicon-containing layer on the non-core-gaspath surface region and a barrier layer that has a first section on the silicon-containing layer and a second section on the core-gaspath region and that is connected to the first section. The surface of the barrier layer has a second surface roughness that is less than the first surface roughness. The first section is in contact with the metallic component and the second section serves as an environmental barrier on the core-gaspath region.

A seal system includes a ceramic component, a metallic component, a coating system. The ceramic component has a first surface region that defines a first surface roughness. The metallic component is situated adjacent to the first surface region and has a second surface region facing the first surface region. The coating system includes a silicon-containing layer on the surface region of the ceramic component and barrier layer on the silicon-containing layer. The silicon containing layer has a surface in contact with the barrier layer and the barrier layer has a surface in contact with the metallic component. The surface of the barrier layer has a second surface roughness that is less than the first surface roughness. The barrier layer serves to limit interaction between silicon of the silicon-containing layer and elements of the metallic component. The barrier layer includes at least one of mullite, zircon, or hafnon.

Disclosed is a joined ceramic body comprising a first ceramic portion comprising a first ceramic, a second ceramic portion comprising a second ceramic, and a joining layer formed between the first ceramic portion and the second ceramic portion. The joining layer has a bond thickness of from 0.5 to 20 um and comprises silicon dioxide having a total impurity content of 20 ppm and less. A method of making the joined ceramic body and a joining material are also disclosed.

Provided is a polycrystalline ceramic substrate to be bonded to a compound semiconductor substrate with a bonding layer interposed therebetween, wherein at least one of relational expression (1) 0.7<α.sub.1/α.sub.2<0.9 and relational expression (2) 0.7<α.sub.3/α.sub.4<0.9 holds, where α.sub.1 represents a linear expansion coefficient of the polycrystalline ceramic substrate at 30° C. to 300° C. and α.sub.2 represents a linear expansion coefficient of the compound semiconductor substrate at 30° C. to 300° C., and α.sub.3 represents a linear expansion coefficient of the polycrystalline ceramic substrate at 30° C. to 1000° C. and α.sub.4 represents a linear expansion coefficient of the compound semiconductor substrate at 30° C. to 1000° C.

Methods of forming joinery between components formed from dissimilar materials, and assemblies utilizing the joinery. The components include interface surfaces having complementary peaks and valleys that interlock. A compliant interface is formed between the interface surfaces and the interface can be configured to provide functionality.

A method for forming a high temperature coating includes forming a pre-sintered ceramic coating on a ceramic composite substrate. The pre-sintered ceramic coating includes a plurality of ceramic particles. The method further includes sintering at least a portion of the pre-sintered ceramic coating by heating the portion of the pre-sintered ceramic coating to a sintering temperature of the plurality of ceramic particles using joule heating. The sintering temperature is greater than about 1000 degrees Celsius (° C.).

An article for a high temperature environment includes a first ceramic composite substrate, a second ceramic composite substrate, and a high temperature interface between a first surface of the first ceramic composite substrate and a second surface of the second ceramic composite substrate. The high temperature interface includes at least one high temperature interface layer that includes a ceramic matrix and a plurality of fibers distributed through the ceramic matrix.

A method for forming a high temperature coating includes forming a pre-sintered ceramic coating on a ceramic composite substrate. The pre-sintered ceramic coating comprises a plurality of ceramic particles. The method further includes sintering at least a portion of the pre-sintered ceramic coating by heating the portion of the pre-sintered ceramic coating to a sintering temperature of the pre-sintered ceramic coating using one or more non-contact radiative heating elements. The sintering temperature is greater than about 1000 degrees Celsius (° C.).

A ceramic structure includes a base body, and a thermoelectric device having a part in directly contact with the base body. The base body is a ceramic consisting of aluminum oxide. The thermoelectric device comprises a conductor part that is a sintered body having an alloy of tungsten and rhenium, as a main component, and including nickel oxide, aluminum oxide and silicon dioxide.