C04B2237/343

AIRCRAFT SEEKER WINDOWS AND AIRCRAFT WINDOW SYSTEMS INCLUDING THE SAME

An approach to seeker windows for aircraft comprises a window layer comprising an IR transparent material, the window layer comprising a first side and a second side substantially opposite the first side; and a heating layer on the first side or the second side of the window layer, the heating layer configured to apply a heating profile to the window layer to reduce thermal shock imparted to the window layer when the seeker window is exposed to hypersonic flight conditions.

MULTILAYER BODY AND ELECTRONIC COMPONENT FORMED OF SAME
20230044439 · 2023-02-09 ·

A laminate body including a base material and a flat silicone sealing layer adhered thereto, generally without any voids, is provided. Also provided is a curable hot melt silicone composition layer with a particular curable hot melt silicone composition, providing a laminate body that does not readily cause stress on a substrate after the curable hot melt silicone composition is cured. A laminate body comprises a base material, and a curable hot melt silicone composition layer in contact with the base material. The curable hot melt silicone composition includes an organopolysiloxane resin containing siloxane units selected from a group containing T units or Q units making up at least 20 mol % or more of all siloxane units. The curable hot melt silicone composition generally has a melt viscosity as measured using a flow tester at a pressure of 2.5 MPa and at 100° C. of 5,000 Pa.Math.s or less.

CERAMIC JOINED BODY, ELECTROSTATIC CHUCK DEVICE, AND METHOD FOR PRODUCING CERAMIC JOINED BODY

A ceramic joined body (1) includes: a pair of ceramic plates (2,3) that include a conductive material; a conductive layer (4) and an insulating layer (5) that are interposed between the pair of ceramic plates (2, 3); and a pair of intermediate layers (6, 7) that are interposed between the pair of ceramic plates (2, 3) and the conductive layer (4) and are in contact with the pair of ceramic plates (2, 3) and the conductive layer (4).

Dense composite material, method for producing the same, joined body, and member for semiconductor manufacturing device

According to the present invention, a dense composite material includes titanium silicide in an amount of 43 to 63 mass %; silicon carbide in an amount less than the mass percentage of the titanium silicide; and titanium carbide in an amount less than the mass percentage of the titanium silicide. In the dense composite material, a maximum value of interparticle distances of the silicon carbide is 40 μm or less, a standard deviation of the interparticle distances is 10 or less, and an open porosity of the dense composite material is 1% or less.

Method of Joining Metal-Ceramic Substrates to Metal Bodies
20180002239 · 2018-01-04 ·

A method of joining a metal-ceramic substrate having metalization on at least one side to a metal body by using a metal alloy is disclosed. The metal body has a thickness of less than 1.0 mm, and the metal alloy contains aluminum and has a liquidus temperature of greater than 450° C. The resulting metal-ceramic module provides a strong bond between the metal body and the ceramic substrate. The resulting module is useful as a circuit carrier in electronic appliances, with the metal body preferably functioning as a cooling body.

CIRCUIT SUBSTRATE AND SEMICONDUCTOR DEVICE

To improve a TCT characteristic of a circuit substrate. The circuit substrate comprises a ceramic substrate including a first and second surfaces, and first and second metal plates respectively bonded to the first and second surfaces via first and second bonding layers. A three-point bending strength of the ceramic substrate is 500 MPa or more. At least one of L1/H1 of a first protruding portion of the first bonding layer and L2/H2 of a second protruding portion of the second bonding layer is 0.5 or more and 3.0 or less. At least one of an average value of first Vickers hardnesses of 10 places of the first protruding portion and an average value of second Vickers hardnesses of 10 places of the second protruding portion is 250 or less.

CERAMIC MILLING CUTTER
20180009043 · 2018-01-11 ·

A milling device is rotatable in one direction around a longitudinal center axis defining a forward direction and an opposite rearward direction, and includes a front part and a rear part. The front part has cutting edges, each having a longitudinal extension, and chip flutes, each having a longitudinal extension. The front part is made of a monolithic piece of ceramic. The rear part is configured to be fixed in a rotatable tool body or a rotatable chuck. The rear part is also made of a monolithic piece of cemented carbide. A front end surface of the rear part has a smaller area than a rear end surface of the front part. The front end surface of the rear part and a rear end surface of the front part are permanently bonded or brazed to each other by a joint.

Semiconductor substrate support with multiple electrodes and method for making same

A method for manufacturing an electrostatic chuck with multiple chucking electrodes made of ceramic pieces using metallic aluminum as the joining. The aluminum may be placed between two pieces and the assembly may be heated in the range of 770 C to 1200 C. The joining atmosphere may be non-oxygenated. After joining the exclusions in the electrode pattern may be machined by also machining through one of the plate layers. The machined exclusion slots may then be filled with epoxy or other material. An electrostatic chuck or other structure manufactured according to such methods.

Metal ceramic substrate and method for manufacturing such metal ceramic substrate
20230028429 · 2023-01-26 ·

A carrier substrate (1) for electrical components, in particular metal-ceramic substrate (1) for electrical components, comprising an insulation layer (10), the insulation layer (10) preferably having a material comprising a ceramic or a composite comprising at least one ceramic layer, a component metallization (20) which is formed on a component side (BS) and has a first primary structuring (21), and a cooling part metallization (30) which is formed on a cooling side (KS) opposite the component side (BS) and has a second primary structuring (31), wherein the insulation layer (10), the component metallization (20) and the cooling part metallization (30) are arranged one above the other along a stacking direction (S), and
wherein the first primary structuring (21) and the second primary structuring (31), as viewed in the stacking direction (S), run congruently at least in portions.

CERAMIC SUBSTRATE FOR POWER MODULE AND POWER MODULE COMPRISING SAME
20230023610 · 2023-01-26 · ·

A ceramic substrate according to the present invention includes: a ceramic base material; an electrode pattern formed on the ceramic base material; and at least one spacer arranged in any one of regions in the ceramic base material and the electrode pattern, in which a semiconductor chip is mounted.