A method for manufacturing a ceramic substrate containing glass includes a firing step in which an unfired silver-based conductor material is disposed on an unfired ceramic layer and is fired. The unfired silver-based conductor material contains at least one of a metal boride and a metal silicide.

A composite fiber composed of at least a metal sintered body and a ceramic sintered body. In the composite fiber, the metal sintered body and the ceramic sintered body are adjacent to each other. The composite fiber having the metal sintered body and the ceramic sintered body can have a tensile strength of 5 kgf/mm.sup.2 or more.

Disclosed is a method for manufacturing a ceramic susceptor, the method including: preparing ceramic sheets; preparing a lamination structure of a molded body, in which the ceramic sheets are laminated and a conductive metal layer for electrodes is disposed between the ceramic sheet laminated products; and sintering the lamination structure of the molded body, wherein the preparing of the ceramic sheets includes: obtaining a vitrified first additive powder by heat-treating a slurry containing MgO, SiO.sub.2, and CaO; preparing a slurry by mixing an Al.sub.2O.sub.3 powder with the first additive powder, a second additive powder containing a MgO powder, and a third additive powder containing a Y.sub.2O.sub.3 powder; and forming the ceramic sheets by tape casting the slurry.

Provided is a polycrystalline ceramic substrate to be bonded to a compound semiconductor substrate with a bonding layer interposed therebetween, wherein at least one of relational expression (1) 0.7<α.sub.1/α.sub.2<0.9 and relational expression (2) 0.7<α.sub.3/α.sub.4<0.9 holds, where α.sub.1 represents a linear expansion coefficient of the polycrystalline ceramic substrate at 30° C. to 300° C. and α.sub.2 represents a linear expansion coefficient of the compound semiconductor substrate at 30° C. to 300° C., and α.sub.3 represents a linear expansion coefficient of the polycrystalline ceramic substrate at 30° C. to 1000° C. and α.sub.4 represents a linear expansion coefficient of the compound semiconductor substrate at 30° C. to 1000° C.

An improved ceramic material for heat insulation with selection of specific stabilizers and adapted proportions, includes zirconium oxide with 0.2 wt. % to 8.0 wt. % of the base stabilizers: yttrium oxide (Y.sub.2O.sub.3), hafnium oxide (HfO.sub.2), cerium oxide (CeO.sub.2), calcium oxide (CaO), and/or magnesium oxide (MgO), wherein at least yttrium oxide (Y.sub.2O.sub.3) is used, and optionally at least one of the additional stabilizers: 0.2 wt. % to 20 wt. % of erbium oxide (Er.sub.2O.sub.3) and/or ytterbium oxide (Yb.sub.2O.sub.3).

A copper-ceramic composite: includes a ceramic substrate containing alumina and a copper or copper alloy coating on the ceramic substrate. The alumina has a mean grain shape factor R.sub.a(Al.sub.2O.sub.3), defined as the arithmetic mean of the shape factors R of the alumina grains, of at least 0.4.

A structured multi-phase composite which include a metal phase, and a low stiffness, high thermal conductivity phase or encapsulated phase change material, that are arranged to create a composite having high thermal conductivity, having reduced/controlled stiffness, and a low CTE to reduce thermal stresses in the composite when exposed to cyclic thermal loads. The structured multi-phase composite is useful for use in structures such as, but not limited to, high speed engine ducts, exhaust-impinged structures, heat exchangers, electrical boxes, heat sinks, and heat spreaders.

This thermoelectric conversion module is formed by electrically connecting, by a conductive member, one end of an n-type thermoelectric conversion element having a negative Seebeck coefficient and having a half-Heusler structure to one end of a p-type thermoelectric conversion element containing an oxide having a positive Seebeck coefficient at a temperature of 25° C. or higher. The conductive member is connected to the n-type thermoelectric conversion element and the p-type thermoelectric conversion element through a connection layer containing a conductive metal comprising silver, and the connection layer is characterized by further containing an oxide to reduce the bond resistance between the n-type thermoelectric conversion element and/or the p-type thermoelectric conversion element.

Polycrystalline cubic boron nitride compact include a body having sintered microcrystalline cubic boron nitride in a matrix of binder material. The microcrystalline cubic boron nitride particles have a size ranging from 2 microns to 50 microns. The particles of microcrystalline cubic boron nitride include a plurality of sub-grains, each sub-grain having a size ranging from 0.1 micron to 2 microns. The compacts are manufactured in a high pressure—high temperature (HPHT) sintering process. The compacts exhibit intergranular defect formation following introduction of wear. The sub-grains promote crack propagation based on micro-chipping rather than on a cleavage mechanism and, in sintered bodies, cracks propagate intergranularly rather than intragranularly, resulting in increased toughness and improved wear characteristics as compared to monocrystalline cubic boron nitride. The compacts are suitable for use as abrasive tools.

A transaction card includes a card body that may comprise a card body comprising a ceramic material, the card body including a primary surface and a first mating surface. A card backer comprises a metallic material and includes a secondary surface and a second mating surface. A portion of the first mating surface and a portion of the second mating surface are coupled together.