Methods of forming a metallic-ceramic brazed joint are disclosed herein. The method of forming the brazed joint includes deoxidizing the surface of metallic components, assembling the joint, heating the joint to fuse the joint components, and cooling the joint. In certain embodiments, the brazed joint includes a conformal layer. In further embodiments, the brazed joint has features in order to reduce stress concentrations within the joint.

There is provided a group III nitride laminate, including: a substrate comprised of silicon carbide; a first layer comprised of aluminum nitride and formed on the substrate; a second layer comprised of gallium nitride and formed on the first layer; and a third layer formed on the second layer and comprised of group III nitride having an electron affinity lower than that of the gallium nitride which is comprised in the second layer, the second layer having a thickness of less than 500 nm, the second layer containing iron at a concentration of less than 1×10.sup.17/cm.sup.3, and the second layer containing carbon at a concentration of less than 1×10.sup.17/cm.sup.3.

In a manufacturing method for a member for a semiconductor manufacturing device, a metal terminal and a ceramic member are joined by using a paste that contains a resin and a metal particle(s), and a metal fine particle(s) that has/have a particle size(s) of 100 nm or less in the metal particle(s) account(s) for 1% by mass or more of 100% by mass of the metal particle(s). A member for a semiconductor manufacturing device includes a metal terminal, a ceramic member, and a joining part that connects the metal terminal and the ceramic member. The joining part contains a metal particle(s).

Provided is a method that allows for firm joining of power module components even if a joining area is large. The method includes: forming an oxygen ion conductor layer on a surface of one of a first member to be joined containing metal and a second member to be joined containing ceramic; arranging the first member to be joined and the second member to be joined so that they are in contact with each other via the oxygen ion conductor layer; connecting the first member to be joined to one of a positive electrode side and a negative electrode side of a voltage application device and the second member to be joined to the other; and applying a voltage between the first member to be joined and the second member to be joined to join the first member to be joined and the second member to be joined together.

Implementations of semiconductor packages may include a metallic baseplate, a first insulative layer coupled to the metallic baseplate, a first plurality of metallic traces, each metallic trace of the first plurality of metallic traces coupled to the electrically insulative, one or more semiconductor devices coupled to each one of the first plurality of metallic traces, a second plurality of metallic traces coupled to the one or more semiconductor devices, and a second insulative layer coupled to the metallic traces of the second plurality of metallic traces.

A transaction card includes a card body that may comprise a card body comprising a ceramic material, the card body including a primary surface and a first mating surface. A card backer comprises a metallic material and includes a secondary surface and a second mating surface. A portion of the first mating surface and a portion of the second mating surface are coupled together.

A power electronic substrate includes a metallic baseplate having a first and second surface opposing each other. An electrically insulative layer also has first and second surfaces opposing each other, its first surface coupled to the second surface of the metallic baseplate. A plurality of metallic traces each include first and second surfaces opposing each other, their first surfaces coupled to the second surface of the electrically insulative layer. At least one of the metallic traces has a thickness measured along a direction perpendicular to the second surface of the metallic baseplate that is greater than a thickness of another one of the metallic traces also measured along a direction perpendicular to the second surface of the metallic baseplate. In implementations the electrically insulative layer is an epoxy or a ceramic material. In implementations the metallic traces are copper and are plated with a nickel layer at their second surfaces.

A joined body 10 includes a ceramic body 12, a metal member 14, and a joint portion 15 that joins the ceramic body 12 and the metal member 14 together. The joint portion 15 includes a first joint layer 16 joined to the ceramic body 12 and a second joint layer 18 joined to the metal member 14. The first joint layer 16 is disposed on the ceramic body 12 side and contains an alloy that contains Fe and Cr as main components, and a compound having a thermal expansion coefficient of 4.0×10.sup.−6 (/° C.) or lower is dispersed in the first joint layer 16. The second joint layer 18 is disposed on the metal member 14 side, contains an alloy that contains Fe and Cr as main components, and has a larger thermal expansion coefficient than the first joint layer 16.

A method for manufacturing a ceramic heater-type glow plug that includes: a ceramic heater; a metallic outer cylinder that holds the ceramic heater at one end and has the other end inserted in and fixed to a metallic housing; and lead wire that is connected to the ceramic heater and electrifies the ceramic heater, the method for manufacturing a ceramic heater-type glow plug includes the steps of: forming a metalized layer in a region of the ceramic heater that is connected to the lead wire; press-inserting at least the metalized layer of the ceramic heater in a connection fitting that connects the ceramic heater and the lead wire; and heating the ceramic heater and the connection fitting at a temperature at which a material for forming the metalized layer is brought into a semi-molten state and joining by mass transfer between the connection fitting and a solid layer of the metalized layer.

An electronic device housing, an electronic device and a compound body are provided. The electronic device housing comprises a frame; a sealing layer, disposed on at least a part of an outer surface of the frame, and including a plurality of sub-sealing layers laminated in sequence; and a back case, attached to the frame by the sealing layer, wherein two adjacent sub-sealing layers have different compositions.