A method for manufacturing an electrostatic chuck with multiple chucking electrodes made of ceramic pieces using metallic aluminum as the joining. The aluminum may be placed between two pieces and the assembly may be heated in the range of 770 C to 1200 C. The joining atmosphere may be non-oxygenated. After joining the exclusions in the electrode pattern may be machined by also machining through one of the plate layers. The machined exclusion slots may then be filled with epoxy or other material. An electrostatic chuck or other structure manufactured according to such methods.

According to an aspect of the invention, there is provided a plasma-resistant member including: a base member; and a layer structural component formed at a surface of the base member, the layer structural component including an yttria polycrystalline body and being plasma resistant, the layer structural component including a first uneven structure, and a second uneven structure formed to be superimposed onto the first uneven structure, the second uneven structure having an unevenness finer than an unevenness of the first uneven structure.

Provided is a polycrystalline ceramic substrate to be bonded to a compound semiconductor substrate with a bonding layer interposed therebetween, wherein at least one of relational expression (1) 0.7<α.sub.1/α.sub.2<0.9 and relational expression (2) 0.7<α.sub.3/α.sub.4<0.9 holds, where α.sub.1 represents a linear expansion coefficient of the polycrystalline ceramic substrate at 30° C. to 300° C. and α.sub.2 represents a linear expansion coefficient of the compound semiconductor substrate at 30° C. to 300° C., and α.sub.3 represents a linear expansion coefficient of the polycrystalline ceramic substrate at 30° C. to 1000° C. and α.sub.4 represents a linear expansion coefficient of the compound semiconductor substrate at 30° C. to 1000° C.

In a ceramic/copper/graphene assembly, a ceramic member, a copper member formed of copper or a copper alloy, and a graphene-containing carbonaceous member containing a graphene aggregate are joined. At a joining interface between the copper member and the graphene-containing carbonaceous member, an active metal carbide layer containing a carbide of one or more kinds of active metals selected from Ti, Zr, Nb, and Hf is formed on a side of the graphene-containing carbonaceous member, and a Mg solid solution layer having Mg dissolved in a matrix phase of Cu is formed between the active metal carbide layer and the copper member.

A solder material (30) for bonding a metal layer (20) to a ceramic layer (10), in particular for forming a metal-ceramic substrate as a carrier for electrical components, comprising: a base material and an active metal, wherein the solder material (30) is a foil comprising the base material in a first layer (31) and the active metal in a second layer (32), and wherein the foil has a total thickness (GD) which is less than 50 μm, preferably less than 25 μm and particularly preferably less than 15 μm.

A copper-ceramic bonded body includes a copper member made of copper or a copper alloy, and a ceramic member made of silicon nitride, the copper member and the ceramic member being bonded to each other, in which a maximum length of a Mg—N compound phase which is present at a bonded interface between the copper member and the ceramic member is less than 100 nm, and in a unit length along the bonded interface, the number density of the Mg—N compound phase in a range of a length of 10 nm or more and less than 100 nm is less than 8 pieces/μm.

The invention relates to a process for producing a metal-ceramic substrate (1), comprising: providing a ceramic element (10) and a metal layer, providing a gas-tight container (25) that encloses the ceramic element (10), the container (25) preferably being formed from the metal layer or comprising the metal layer, forming the metal-ceramic substrate (1) by connecting the metal layer to the ceramic element (10) by means of hot isostatic pressing, wherein, for the purpose of forming the metal-ceramic substrate (1), an active metal layer (15) or a contact layer comprising an active metal is arranged at least in some sections between the metal layer and the ceramic element (10) for supporting the connection of the metal layer to the ceramic element (10).

According to an aspect of the invention, there is provided a plasma-resistant member including: a base member; and a layer structural component formed at a surface of the base member, the layer structural component including an yttria polycrystalline body and being plasma resistant, the layer structural component including a first uneven structure, and a second uneven structure formed to be superimposed onto the first uneven structure, the second uneven structure having an unevenness finer than an unevenness of the first uneven structure.

A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The ceramic pieces may be aluminum nitride or other ceramics, and the pieces may be brazed with Nickel and an alloying element, under controlled atmosphere. The completed joint will be fully or substantially Nickel with another element in solution. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the interior of a heater or electrostatic chuck. Semiconductor processing equipment comprising ceramic and joined with a nickel alloy and adapted to withstand processing chemistries, such as fluorine chemistries, as well as high temperatures.

An interconnected corrugated carbon-based network comprising a plurality of expanded and interconnected carbon layers is disclosed. In one embodiment, each of the expanded and interconnected carbon layers is made up of at least one corrugated carbon sheet that is one atom thick. In another embodiment, each of the expanded and interconnected carbon layers is made up of a plurality of corrugated carbon sheets that are each one atom thick. The interconnected corrugated carbon-based network is characterized by a high surface area with highly tunable electrical conductivity and electrochemical properties.