A multilayer electronic component includes a multilayer body including dielectric layers and inner electrode layers, the multilayer body including an electrode facing portion in which the inner electrode layers are laminated to face each other with the dielectric layers interposed therebetween. The multilayer body has a thickness of at least about 1.5 mm in a lamination direction, a length of at least about 3.0 mm, and a width of at least about 1.5 mm. Each of the dielectric layers includes Ba, Ti, and Cl. A Cl concentration C.sub.1 in the entire electrode facing portion satisfies about 10 wtppm<C.sub.1<about 50 wtppm. On an imaginary central axis line, a Cl concentration C.sub.2 in a central portion of the electrode facing portion and a Cl concentration C.sub.3 in both end portions of the electrode facing portion satisfy about 0.5C.sub.2≤C.sub.3<C.sub.2.

A ceramic joined body (1) includes: a pair of ceramic plates (2,3) that include a conductive material; a conductive layer (4) and an insulating layer (5) that are interposed between the pair of ceramic plates (2, 3); and a pair of intermediate layers (6, 7) that are interposed between the pair of ceramic plates (2, 3) and the conductive layer (4) and are in contact with the pair of ceramic plates (2, 3) and the conductive layer (4).

According to the present invention, a dense composite material includes titanium silicide in an amount of 43 to 63 mass %; silicon carbide in an amount less than the mass percentage of the titanium silicide; and titanium carbide in an amount less than the mass percentage of the titanium silicide. In the dense composite material, a maximum value of interparticle distances of the silicon carbide is 40 μm or less, a standard deviation of the interparticle distances is 10 or less, and an open porosity of the dense composite material is 1% or less.

A method of joining a metal-ceramic substrate having metalization on at least one side to a metal body by using a metal alloy is disclosed. The metal body has a thickness of less than 1.0 mm, and the metal alloy contains aluminum and has a liquidus temperature of greater than 450° C. The resulting metal-ceramic module provides a strong bond between the metal body and the ceramic substrate. The resulting module is useful as a circuit carrier in electronic appliances, with the metal body preferably functioning as a cooling body.

The present invention provides a high thermal conductive silicon nitride sintered body having a thermal conductivity of 50 W/m.Math.K or more and a three-point bending strength of 600 MPa or more, wherein when an arbitrary cross section of the silicon nitride sintered body is subjected to XRD analysis and highest peak intensities detected at diffraction angles of 29.3±0.2°, 29.7±0.2°, 27.0±0.2°, and 36.1±0.2° are expressed as I.sub.29.3°, I.sub.29.7°, I.sub.27.0°, and I.sub.36.1°, a peak ratio (I.sub.29.3°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.01 to 0.08, and a peak ratio (I.sub.29.7°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.02 to 0.16. Due to above configuration, there can be provided a silicon nitride sintered body having a high thermal conductivity of 50 W/m.Math.K or more, and excellence in insulating properties and strength.

To improve a TCT characteristic of a circuit substrate. The circuit substrate comprises a ceramic substrate including a first and second surfaces, and first and second metal plates respectively bonded to the first and second surfaces via first and second bonding layers. A three-point bending strength of the ceramic substrate is 500 MPa or more. At least one of L1/H1 of a first protruding portion of the first bonding layer and L2/H2 of a second protruding portion of the second bonding layer is 0.5 or more and 3.0 or less. At least one of an average value of first Vickers hardnesses of 10 places of the first protruding portion and an average value of second Vickers hardnesses of 10 places of the second protruding portion is 250 or less.

A method for manufacturing a ceramic substrate containing glass includes a firing step in which an unfired silver-based conductor material is disposed on an unfired ceramic layer and is fired. The unfired silver-based conductor material contains at least one of a metal boride and a metal silicide.

A multilayer electronic component that includes a stacked body having therein a plurality of dielectric layers including a CZ-based perovskite phase and an element M1, a plurality of internal electrode layers including Cu, and an interface layer including the element M1 in at least a portion of an interface with the plurality of internal electrode layers. Element M1 is an element that has a binding energy between CZ and Cu via the element M1 of less than or equal to −9.8 eV by first-principles calculation using a pseudopotential method. When amounts of elements included in the dielectric layers are expressed as parts by mol, a ratio m1 of an amount of the element M1 to an amount of the Zr in the interface layer is 0.03≤m1≤0.25.

A method for manufacturing an electrostatic chuck with multiple chucking electrodes made of ceramic pieces using metallic aluminum as the joining. The aluminum may be placed between two pieces and the assembly may be heated in the range of 770 C to 1200 C. The joining atmosphere may be non-oxygenated. After joining the exclusions in the electrode pattern may be machined by also machining through one of the plate layers. The machined exclusion slots may then be filled with epoxy or other material. An electrostatic chuck or other structure manufactured according to such methods.

According to the present invention, there is provided a copper/ceramic bonded body including: a copper member made of copper or a copper alloy; and a ceramic member made of silicon-containing ceramics, the copper member and the ceramic member being bonded to each other, in which a maximum indentation hardness in a region is set to be in a range of 70 mgf/μm.sup.2 or more and 150 mgf/μm.sup.2 or less, the region being from 10 μm to 50 μm with reference to a bonded interface between the copper member and the ceramic member toward the copper member side.