A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value ε.sub.A of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value ε.sub.B of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |ε.sub.A−ε.sub.B|≤0.1.

A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value ε.sub.A of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value ε.sub.B of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |ε.sub.A−ε.sub.B|≤0.1.

The present invention relates to a method for producing a metal nitride by igniting a raw material powder containing a metal powder filled in a reaction vessel under a nitrogen atmosphere and propagating nitriding combustion heat generated by a nitriding reaction of the metal to the whole raw material powder, the method including forming a heat insulating layer made of a material having nitrogen permeability and inert to the nitriding reaction on an upper surface of a layer made of the raw material powder. According to the present invention, it is possible to provide a method for reducing the amount of unreacted metal powder when producing a metal nitride by a combustion synthesis method.

In a silicon nitride substrate including a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, a plate thickness of the silicon nitride substrate is 0.4 mm or les, and a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains in a 50 μm×50 μm observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 20%. Etching resistance can be increased when forming the circuit board.

Paste compositions for additive manufacturing and methods for the same are provided. The paste composition may include an organic vehicle, and one or more powders dispersed in the organic vehicle. The organic vehicle may include a solvent, a polymeric binder, a thixotropic additive, and a dispersant. The organic vehicle may be configured to provide the paste composition with a suitable viscosity. The organic vehicle may also be configured to provide a stable paste composition for a predetermined period of time.

Invention relates to the production method of transparent polycrystalline silicon nitride ceramics which are obtained by sintering raw materials in powder form with powder metallurgy in the field of advanced technical ceramics and are used in the aviation and defense industry. More specifically, the present invention relates to a transparent polycrystalline silicon nitride ceramic material production method which allows obtaining transparent polycrystalline silicon nitride ceramic material at lower temperature and pressure values compared to the prior art in order to reduce production costs, facilitate the production process and reduce quantity/number of material and devices used, for this, unlike conventional sintering technique, spark plasma sintering technique in which heat is produced under high electrical current is used.

Invention relates to the production method of transparent polycrystalline silicon nitride ceramics which are obtained by sintering raw materials in powder form with powder metallurgy in the field of advanced technical ceramics and are used in the aviation and defense industry. More specifically, the present invention relates to a transparent polycrystalline silicon nitride ceramic material production method which allows obtaining transparent polycrystalline silicon nitride ceramic material at lower temperature and pressure values compared to the prior art in order to reduce production costs, facilitate the production process and reduce quantity/number of material and devices used, for this, unlike conventional sintering technique, spark plasma sintering technique in which heat is produced under high electrical current is used.

Disclosed herein is a ceramic particle comprising a core substrate chosen from yttria-stabilized zirconia, partially stabilized zirconia, zirconium oxide, aluminum nitride, silicon nitride, silicon carbide, and cerium oxide, and a conformal coating of a sintering aid film having a thickness of less than three nanometers and covering the core substrate, and methods for producing the ceramic particle.

A silicon nitride sintered body includes a silicon nitride crystal grains and grain boundary phases. Further, when D stands for width of the silicon nitride sintered body before being subjected to surface processing, relations between an average grain diameter dA and an average aspect ratio rA of the silicon nitride crystal grain in a first region from an outermost surface to a depth of 0 to 0.01D and an average grain diameter dB and an average aspect ratio rB of the silicon nitride crystal grain in a second region inside the first region satisfy the inequalities:

0.8≤ dA/dB≤ 1.2; and

0.8≤ rA/rB≤ 1.2.

A silicon nitride sintered body includes a silicon nitride crystal grains and grain boundary phases. Further, when D stands for width of the silicon nitride sintered body before being subjected to surface processing, relations between an average grain diameter dA and an average aspect ratio rA of the silicon nitride crystal grain in a first region from an outermost surface to a depth of 0 to 0.01D and an average grain diameter dB and an average aspect ratio rB of the silicon nitride crystal grain in a second region inside the first region satisfy the inequalities:

0.8≤ dA/dB≤ 1.2; and

0.8≤ rA/rB≤ 1.2.