C04B35/62218

METHODS AND APPARATUS FOR PLASMA SPRAYING SILICON CARBIDE COATINGS FOR SEMICONDUCTOR CHAMBER APPLICATIONS

Methods and apparatus for producing bulk silicon carbide and producing silicon carbide coatings are provided herein. The method includes feeding a mixture of silicon carbide and ceramic into a plasma sprayer. The plasma generates a stream towards a substrate forming a bulk material or optionally a coating on the substrate such as an article upon contact therewith. In embodiments, the substrate can be removed, leaving a component part fabricated from bulk silicon carbide.

Annealed garnet electrolyte separators

Set forth herein are pellets, thin films, and monoliths of lithium-stuffed garnet electrolytes having engineered surfaces. These engineered surfaces have a list of advantageous properties including, but not limited to, low surface area resistance, high Li.sup.+ ion conductivity, low tendency for lithium dendrites to form within or thereupon when the electrolytes are used in an electrochemical cell. Other advantages include voltage stability and long cycle life when used in electrochemical cells as a separator or a membrane between the positive and negative electrodes. Also set forth herein are methods of making these electrolytes including, but not limited to, methods of annealing these electrolytes under controlled atmosphere conditions. Set forth herein, additionally, are methods of using these electrolytes in electrochemical cells and devices. The instant disclosure further includes electrochemical cells which incorporate the lithium-stuffed garnet electrolytes set forth herein.

METHODS AND DEVICES FOR ELECTROMAGNETIC WAVE ABSORPTION USING GRADIENT, COATED HONEYCOMB STRUCTURES
20230041555 · 2023-02-09 ·

A device and method for absorbing electromagnetic waves can include a honeycomb sheet formed by a plurality of interconnected hexagon cells arranged in rows. The hexagon cells are made up of sidewalls, each sidewall formed by two surfaces that converge at a top of the sidewall and diverge from the top to a bottom of the sidewall such that a thickness of the sidewalls increases from top to bottom and an angle forms between the two surfaces at the top of the sidewall. In an example, the angle is about 8 degrees. The honeycomb sheet can be coated with a magnetic, composite coating to increase electromagnetic shielding. An example coating includes magnetic multi-granular nanoclusters (MGNC) and multi-walled carbon nanotubes (MWCNT). A base layer can be attached to the honeycomb sheet for mechanical stability and additional absorption. The device is suitable for radar absorbing materials (RAM) for aerospace and military applications.

ANNEALED GARNET ELECTROLYTE SEPARATORS

Set forth herein are pellets, thin films, and monoliths of lithium-stuffed garnet electrolytes having engineered surfaces. These engineered surfaces have a list of advantageous properties including, but not limited to, low surface area resistance, high Li.sup.+ ion conductivity, low tendency for lithium dendrites to form within or thereupon when the electrolytes are used in an electrochemical cell. Other advantages include voltage stability and long cycle life when used in electrochemical cells as a separator or a membrane between the positive and negative electrodes. Also set forth herein are methods of making these electrolytes including, but not limited to, methods of annealing these electrolytes under controlled atmosphere conditions. Set forth herein, additionally, are methods of using these electrolytes in electrochemical cells and devices. The instant disclosure further includes electrochemical cells which incorporate the lithium-stuffed garnet electrolytes set forth herein.

METAL-Si BASED POWDER, METHOD FOR PRODUCING SAME, METAL-Si BASED SINTERED BODY, SPUTTERING TARGET, AND METAL-Si BASED THIN FILM MANUFACTURING METHOD
20230220538 · 2023-07-13 · ·

A metal-Si based powder contains a metal-Si based particle including a plurality of crystal phase grains. The crystal phase grains include a crystal phase containing a compound of a metal and Si. The crystal phase grains have an average grain size of, for example, 20 μm or less. The metal-Si based particle has an average particle size of, for example, 5 to 100 μm.

METHOD OF PREPARATION OF CERAMIC SLURRY FOR USE IN 3D PRINTING AND METHOD OF PREPARATION OF CERAMIC PRODUCT
20230219855 · 2023-07-13 ·

A method of preparation of a ceramic slurry for use in 3D printing includes steps of: (A) providing a plasticizer and a disperser and mixing the plasticizer and the disperser evenly; (B) mixing the mixture obtained in step (A) with an adhesive, wherein the adhesive is polyvinyl alcohol; and (C) adding a Yttria-stabilized zirconia powder to the mixture obtained in step (B) to produce, by sufficient blending and deaerating, the ceramic slurry for use in 3D printing. A method of preparation of a ceramic product includes steps of: (A) preparing a ceramic slurry with the method; (B) performing 3D printing with the ceramic slurry to form a primary green body; (C) placing the primary green body in a freezer to undergo a refrigeration process, thereby causing crystallization of polyvinyl alcohol; and (D) thawing the frozen primary green body to form a plastic green body with gel structure.

Polyimide-based composite carbon film with high thermal conductivity and preparation method therefor
11535567 · 2022-12-27 · ·

The present invention discloses a polyimide-based composite carbon film with high thermal conductivity and a preparation method therefor. The preparation method includes: uniformly coating the surface of a polyimide-based carbon film with an aqueous graphene oxide solution, and then covering the same with another polyimide-based carbon film uniformly coated with an aqueous graphene oxide solution; repeating such operation; after the polyimide-based carbon films are dried, bonding the polyimide-based carbon films by means of graphene oxide so as to form a thick film; bonding the polyimide-based carbon films more tightly by means of further low-temperature hot pressing; and finally, obtaining a thick polyimide-based carbon film with high thermal conductivity by repairing defects by means of low-temperature heating pre-reduction and high-temperature and high-pressure thermal treatment. The thick polyimide-based carbon film with high thermal conductivity has a thickness greater than 100 μm and an in-plane thermal conductivity of even reaching 1700 W/mK or above.

Piezoelectric thin film, piezoelectric thin film device, piezoelectric actuator, piezoelectric sensor, piezoelectric transducer, hard disk drive, printer head, and ink jet printer device
11532781 · 2022-12-20 · ·

A piezoelectric thin film 3 contains a metal oxide, the metal oxide contains bismuth, potassium, titanium, iron and element M, the element M is at least one of magnesium and nickel, at least a part of the metal oxide is a crystal having a perovskite structure, and a (001) plane, a (110) plane or a (111) plane of the crystal is oriented in a normal direction dn of the surface of the piezoelectric thin film 3.

POLYIMIDE FILM FOR GRAPHITE SHEET, AND GRAPHITE SHEET MANUFACTURED THEREFROM
20220372224 · 2022-11-24 ·

Disclosed herein are a polyimide film for graphite sheets and a graphite sheet manufactured using the same. The polyimide film is fabricated by imidizing a precursor composition including: a polyamic acid prepared by reacting a dianhydride monomer with a diamine monomer; and an organic solvent, wherein the diamine monomer includes about 30 mol % to about 70 mol % of 4,4′-methylenedianiline and about 30 mol % to about 70 mol % of 4,4′-oxydianiline based on the total number of moles of the diamine monomer, 4,4′-methylenedianiline and 4,4′-oxydianiline being present in total in an amount of about 85 mol % or more based on the total number of moles of the diamine monomer.

Semiconductor devices and method of manufacturing the same

A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.