A method of joining a metal-ceramic substrate having metalization on at least one side to a metal body by using a metal alloy is disclosed. The metal body has a thickness of less than 1.0 mm, and the metal alloy contains aluminum and has a liquidus temperature of greater than 450° C. The resulting metal-ceramic module provides a strong bond between the metal body and the ceramic substrate. The resulting module is useful as a circuit carrier in electronic appliances, with the metal body preferably functioning as a cooling body.

A carrier substrate (1) for electrical components, in particular metal-ceramic substrate (1) for electrical components, comprising an insulation layer (10), the insulation layer (10) preferably having a material comprising a ceramic or a composite comprising at least one ceramic layer, a component metallization (20) which is formed on a component side (BS) and has a first primary structuring (21), and a cooling part metallization (30) which is formed on a cooling side (KS) opposite the component side (BS) and has a second primary structuring (31), wherein the insulation layer (10), the component metallization (20) and the cooling part metallization (30) are arranged one above the other along a stacking direction (S), and
wherein the first primary structuring (21) and the second primary structuring (31), as viewed in the stacking direction (S), run congruently at least in portions.

One aspect of the present disclosure provides a composite body including: a nitride sintered body having a porous structure; and a semi-cured product of a thermosetting composition impregnated into the above-described nitride sintered body, in which dielectric breakdown voltage is 4.5 kV or higher.

A superhard material-containing object is configured to have a controlled and repeatable three-dimensional geometry and/or shape. The object further includes a desired three-dimensional spatial variation in microstructure, grain size and/or composition. The superhard material is selected from the group consisting of diamond, boron-doped diamond and cubic boron nitride. A process for production of a superhard material-containing object from a powder of a superhard material, a binder and an optional additive, includes the steps of: (a) producing a feedstock of the superhard material and a polymer binder; (b) extruding one or more filaments from a granulated superhard material-binder feedstock; (c) preparing a printed superhard material-containing object using the one or more filaments; (d) subjecting the printed object to debinding to prepare a debindered object; and (e) sintering the debindered printed object to produce the superhard material-containing object.

A method for producing a metal-ceramic substrate with electrically conductive vias includes: attaching a first metal layer in a planar manner to a first surface side of a ceramic layer; after attaching the first metal layer, introducing a copper hydroxide or copper acetate brine into holes in the ceramic layer delimiting a via, to form an assembly; converting the copper hydroxide or copper acetate brine into copper oxide; subjecting the assembly to a high-temperature step above 500° C. in which the copper oxide forms a copper body in the holes; and after converting the copper hydroxide or copper acetate brine into the copper oxide, attaching a second metal layer in a planar manner to a second surface side of the ceramic layer opposite the first surface side. The copper body produces an electrically conductive connection between the first and the second metal layers.

An embodiment of a PCD insert comprises an embodiment of a PCD element joined to a cemented carbide substrate at an interface. The PCD element has internal diamond surfaces defining interstices between them. The PCD element comprises a masked or passivated region and an unmasked or unpassivated region, the unmasked or unpassivated region defining a boundary with the substrate, the boundary being the interface. At least some of the internal diamond surfaces of the masked or passivated region contact a mask or passivation medium, and some or all of the interstices of the masked or passivated region and of the unmasked or unpassivated region are at least partially filled with an infiltrant material.

Disclosed is a method for manufacturing a ceramic susceptor, the method including: preparing ceramic sheets; preparing a lamination structure of a molded body, in which the ceramic sheets are laminated and a conductive metal layer for electrodes is disposed between the ceramic sheet laminated products; and sintering the lamination structure of the molded body, wherein the preparing of the ceramic sheets includes: obtaining a vitrified first additive powder by heat-treating a slurry containing MgO, SiO.sub.2, and CaO; preparing a slurry by mixing an Al.sub.2O.sub.3 powder with the first additive powder, a second additive powder containing a MgO powder, and a third additive powder containing a Y.sub.2O.sub.3 powder; and forming the ceramic sheets by tape casting the slurry.

A copper/ceramic bonded body is provided, including: a copper member made of copper or a copper alloy; and a ceramic member, the copper member and the ceramic member being bonded to each other, in which a total concentration of Al, Si, Zn, and Mn is 3 atom % or less when concentration measurement is performed by an energy dispersive X-ray analysis method at a position 1000 nm away from a bonded interface between the copper member and the ceramic member to a copper member side, assuming that a total value of Cu, Mg, Ti, Zr, Nb, Hf, Al, Si, Zn, and Mn is 100 atom %.

A semiconductor device includes: an insulated circuit substrate including first and second conductive layers on a top surface side; a first semiconductor chip mounted on the first conductive layer; a second semiconductor chip mounted on the second conductive layer; a printed circuit board including a first lower-side wiring layer arranged to be opposed to the first semiconductor chip, and a second lower-side wiring layer arranged to be opposed to the second semiconductor chip, the printed circuit board being provided with a curved part curved toward the insulated circuit substrate; a first connection member arranged to connect the first semiconductor chip with the first lower-side wiring layer; a second connection member arranged to connect the second semiconductor chip with the second lower-side wiring layer; and a third connection member arranged to connect the first conductive layer with the second lower-side wiring layer at the curved part.

Provided is an electronic apparatus including a metal wiring. The metal wiring includes a plurality of first regions covered with a solder layer, a second region provided between two first regions of the plurality of first regions, and a third region having a nitrogen amount of 20 atoms % or more. An oxygen amount is largest in the second region, followed by at least one of the plurality of first regions, and then by the third region. The nitrogen amount may be largest in the third region, followed by at least one of the plurality of first regions, and then by the second region.