A doping method using an electric field includes stacking a sacrificial layer on a doped layer, disposing a doping material on the sacrificial layer, disposing electrodes on the doping material and the doped layer, respectively, and doping the doping material into the doped layer through oxidation, diffusion, and reduction of the doping material by the electric field.

Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of bismuth can be added into specific sites in the crystal structure of the synthetic garnet in order to boost certain properties, such as the dielectric constant and magnetization. Accordingly, embodiments of the disclosed materials can be used in high frequency applications, such as in base station antennas.

The invention relates to a part made of silicon-based ceramic material or silicon-based ceramic matrix composite (CMC) material comprising an environmental barrier coating (EBC), said coating (12, 13) comprising a bonding layer (12) deposited on the surface of the ceramic material or ceramic matrix composite (CMC), said bonding layer (12) being topped by one or more layers together forming a multifunctional barrier structure (13), characterised in that the bonding layer (12) has at its interface with the multifunctional structure a polycrystalline silica layer (12) or sub-layer (12b).

The invention relates to a part made of silicon-based ceramic material or silicon-based ceramic matrix composite (CMC) material comprising an environmental barrier coating (EBC), said coating (12, 13) comprising a bonding layer (12) deposited on the surface of the ceramic material or ceramic matrix composite (CMC), said bonding layer (12) being topped by one or more layers together forming a multifunctional barrier structure (13), characterised in that the bonding layer (12) has at its interface with the multifunctional structure a polycrystalline silica layer (12) or sub-layer (12b).

Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of bismuth can be added into specific sites in the crystal structure of the synthetic garnet in order to boost certain properties, such as the dielectric constant and magnetization. Accordingly, embodiments of the disclosed materials can be used in high frequency applications, such as in base station antennas.

Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of bismuth can be added into specific sites in the crystal structure of the synthetic garnet in order to boost certain properties, such as the dielectric constant and magnetization. Accordingly, embodiments of the disclosed materials can be used in high frequency applications, such as in base station antennas.

A doping method using an electric field includes stacking a sacrificial layer on a doped layer, disposing a doping material on the sacrificial layer, disposing electrodes on the doping material and the doped layer, respectively, and doping the doping material into the doped layer through oxidation, diffusion, and reduction of the doping material by the electric field.

A process of coating a substrate containing silicon with an environmental barrier coating, comprising altering a surface of the substrate and applying an environmental barrier layer to the surface of the substrate.

A process of coating a substrate containing silicon with an environmental barrier coating, comprising altering a surface of the substrate and applying an environmental barrier layer to the surface of the substrate.

A process of coating a substrate containing silicon with an environmental barrier coating, comprising altering a surface of the substrate and applying an environmental barrier layer to the surface of the substrate.