A composition is generally provided that includes a silicon-containing material (e.g., silicon metal and/or a silicide) and a boron-doped refractory compound, such as about 0.001% to about 85% by volume of the boron-doped refractory compound (e.g., about 1% to about 60% by volume). In one embodiment, a bond coating on a surface of a ceramic component is generally provided with the bond coating including such a composition, with the silicon-containing material is silicon metal.

A composition is generally provided that includes a silicon-containing material (e.g., silicon metal and/or a silicide) and a boron-doped refractory compound, such as about 0.001% to about 85% by volume of the boron-doped refractory compound (e.g., about 1% to about 60% by volume). In one embodiment, a bond coating on a surface of a ceramic component is generally provided with the bond coating including such a composition, with the silicon-containing material is silicon metal.

A coated article including an article having a surface; an oxidation resistant bond coat layer deposited on the surface, the oxidation resistant bond coat layer comprising a metal silicide phase, a crystalline ceramic phase and an amorphous ceramic phase, wherein the metal silicide phase has an aspect ratio greater than 1:1 but less than 50:1.

A coated article including an article having a surface; an oxidation resistant bond coat layer deposited on the surface, the oxidation resistant bond coat layer comprising a metal silicide phase, a crystalline ceramic phase and an amorphous ceramic phase, wherein the metal silicide phase has an aspect ratio greater than 1:1 but less than 50:1.

In some examples, an article for a high-temperature mechanical system including a substrate and a doped calcia-magnesia-alumina-silicate resistant (doped CMAS-resistant) layer on the substrate. The doped CMAS-resistant layer is a thermal barrier coating or an environmental barrier coating and includes a calcia dopant.

In some examples, an article for a high-temperature mechanical system including a substrate and a doped calcia-magnesia-alumina-silicate resistant (doped CMAS-resistant) layer on the substrate. The doped CMAS-resistant layer is a thermal barrier coating or an environmental barrier coating and includes a calcia dopant.

In one aspect, an article comprises a substrate that comprises a ceramic matrix composite; and a metal oxide layer disposed on the substrate; where the metal oxide layer has a marking etched into the metal oxide via laser ablation. The markings include alphabets, numbers, symbols, bar codes, matrix bar codes, quick response codes, or a combination thereof. Disclosed herein too is a method comprising disposing upon a ceramic matrix composite a metal oxide layer; and laser ablating the metal oxide layer to etch the metal oxide layer. The etchings produce markings that comprise alphabets, numbers, symbols, bar codes, matrix bar codes, quick response codes, or a combination thereof.

In one aspect, an article comprises a substrate that comprises a ceramic matrix composite; and a metal oxide layer disposed on the substrate; where the metal oxide layer has a marking etched into the metal oxide via laser ablation. The markings include alphabets, numbers, symbols, bar codes, matrix bar codes, quick response codes, or a combination thereof. Disclosed herein too is a method comprising disposing upon a ceramic matrix composite a metal oxide layer; and laser ablating the metal oxide layer to etch the metal oxide layer. The etchings produce markings that comprise alphabets, numbers, symbols, bar codes, matrix bar codes, quick response codes, or a combination thereof.

A component for use in a semiconductor processing chamber is provided. A component body of a dielectric material has a semiconductor processing facing surface. A coating of a dielectric material is on at least the semiconductor processing facing surface, wherein the dielectric material of the component body has a same stoichiometry as the dielectric material of the coating.

A component for use in a semiconductor processing chamber is provided. A component body of a dielectric material has a semiconductor processing facing surface. A coating of a dielectric material is on at least the semiconductor processing facing surface, wherein the dielectric material of the component body has a same stoichiometry as the dielectric material of the coating.