The present disclosure includes carbon-carbon composite articles having multiphase glass oxidation protection coatings for limiting thermal and/or catalytic oxidation reactions and methods for applying multiphase glass oxidation protection coatings to carbon-carbon composite articles.

The present disclosure includes carbon-carbon composite articles having multiphase glass oxidation protection coatings for limiting thermal and/or catalytic oxidation reactions and methods for applying multiphase glass oxidation protection coatings to carbon-carbon composite articles.

A coated component, along with methods of its formation, are provided. The coated component may include a ceramic matrix composite substrate comprising silicon carbide and having a surface, a bond coat on the surface of the substrate, and an environmental barrier coating on the bond coat. The bond coat includes a plurality of discrete particles dispersed within a matrix phase, with the matrix phase formed from mullite and defining 60% to 98% by volume of the bond coat. The plurality of discrete particles include an oxygen getter and has 50% of its volume or greater formed from particles having an average size of 10 μm to 100 μm.

Disclosed herein are floor tiles comprising, for instance, a substrate and a surface coating provided on an upper surface of the substrate, wherein the surface coating comprises (i) a base formula comprising a glaze and (ii) solid particles comprising tabular alumina.

Disclosed herein are floor tiles comprising, for instance, a substrate and a surface coating provided on an upper surface of the substrate, wherein the surface coating comprises (i) a base formula comprising a glaze and (ii) solid particles comprising tabular alumina.

A component for use in a semiconductor processing chamber is provided. A component body of a dielectric material has a semiconductor processing facing surface. A coating of a dielectric material is on at least the semiconductor processing facing surface, wherein the dielectric material of the component body has a same stoichiometry as the dielectric material of the coating.

A component for use in a semiconductor processing chamber is provided. A component body of a dielectric material has a semiconductor processing facing surface. A coating of a dielectric material is on at least the semiconductor processing facing surface, wherein the dielectric material of the component body has a same stoichiometry as the dielectric material of the coating.

Systems and methods for forming an oxidation protection system on a composite structure are provided. In various embodiments, the oxidation protection system comprises a boron-glass layer formed on the composite substrate and a silicon-glass layer formed over the boron-glass layer. Each of the boron-glass layer and the silicon-glass layer includes a glass former.

Systems and methods for forming an oxidation protection system on a composite structure are provided. In various embodiments, the oxidation protection system comprises a boron-glass layer formed on the composite substrate and a silicon-glass layer formed over the boron-glass layer. Each of the boron-glass layer and the silicon-glass layer includes a glass former.

A gas turbine engine article includes a substrate and a silicate-resistant barrier coating disposed on the substrate. The silicate-resistant barrier coating is composed of a refractory matrix and a calcium aluminosilicate additive (CAS additive) dispersed in the refractory matrix.