Provided is a method of manufacturing a trifluoropyruvyl fluoride dimer, including a reaction step of reacting hexafluoropropylene oxide and aldehyde.

Provided is a method of manufacturing a trifluoropyruvyl fluoride dimer, including a reaction step of reacting hexafluoropropylene oxide and aldehyde.

Disclosed are compounds and methods for solubilizing polymers and oligomers. The compounds have the formula:

##STR00001##

wherein R.sup.1, Q.sup.1 and Q.sup.2 are defined herein.

Disclosed are compounds and methods for solubilizing polymers and oligomers. The compounds have the formula:

##STR00001##

wherein R.sup.1, Q.sup.1 and Q.sup.2 are defined herein.

Partially fluorinated ketones are provided that include a terminal alkyl group having from 1 to 6 carbon atoms bonded to a carbonyl group and a hydrofluoroether moiety having from 2 to 4 carbon atoms that contains at least one hydrogen substituent. The hydrofluoroether moiety is bonded to the carbonyl group with a carbon-carbon bond. The ether oxygen is bonded to a carbon atom that is at least two carbon atoms removed from the carbonyl group. Additionally, a fluorinated alkyl group having from 1 to 10 carbon atoms is bonded to the ether oxygen of the hydrofluoroether moiety. These partially fluorinated ketones can be used in a wide variety of electronics applications.

Partially fluorinated ketones are provided that include a terminal alkyl group having from 1 to 6 carbon atoms bonded to a carbonyl group and a hydrofluoroether moiety having from 2 to 4 carbon atoms that contains at least one hydrogen substituent. The hydrofluoroether moiety is bonded to the carbonyl group with a carbon-carbon bond. The ether oxygen is bonded to a carbon atom that is at least two carbon atoms removed from the carbonyl group. Additionally, a fluorinated alkyl group having from 1 to 10 carbon atoms is bonded to the ether oxygen of the hydrofluoroether moiety. These partially fluorinated ketones can be used in a wide variety of electronics applications.

A resist composition comprising a base polymer and a quencher in the form of an amine compound having an iodized aromatic ring and a tertiary ester structure offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.

A resist composition comprising a base polymer and a quencher in the form of an amine compound having an iodized aromatic ring and a tertiary ester structure offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.

A resist composition comprising a base polymer and a quencher in the form of an ammonium salt compound having an iodized aromatic ring and a tertiary ester structure offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.

A resist composition comprising a base polymer and a quencher in the form of an ammonium salt compound having an iodized aromatic ring and a tertiary ester structure offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.