A method for producing polysulphane-silanes of formula (I): (R.sup.1).sub.3-mR.sup.2.sub.mSi—R.sup.3—S.sub.x—R.sup.3—SiR.sup.2.sub.m(OR.sup.1).sub.3-m by reacting at least one silane of formula (II): (R.sup.1).sub.3-mR.sup.2.sub.mSi—R.sup.3-Hal with M(SH).sub.y and/or M.sub.zS and sulphur, in the presence of a phase transfer catalyst of formula (III), wherein at least one carrier-vapour distillation and/or ozone treatment is performed during or after the reaction.

The present invention provides a method for purifying an organic compound, by which an organic compound having a reduced lead content is obtained from an organic compound that contains a lead component as an impurity. In this method for purifying an organic compound, the organic compound that contains a lead component is irradiated with ultraviolet light, and the lead component is subsequently removed from the organic compound. The present invention also provides a method for producing an organic compound, said method comprising purification of the organic compound by means of the above-described method for purifying an organic compound.

The present invention provides a method for purifying an organic compound, by which an organic compound having a reduced lead content is obtained from an organic compound that contains a lead component as an impurity. In this method for purifying an organic compound, the organic compound that contains a lead component is irradiated with ultraviolet light, and the lead component is subsequently removed from the organic compound. The present invention also provides a method for producing an organic compound, said method comprising purification of the organic compound by means of the above-described method for purifying an organic compound.

Boron, phosphorus, arsenic, antimony and other impurities are at least partially removed from a mixture containing at least one chlorosilane and/or organochlorosilane by a) contacting the liquid mixture with a carrier material functionalized with an amidoxime of the general structural formula (I),

##STR00001##

where CAR=carrier material and R.sup.1, R.sup.2 are independently of one another H, alkyl, alkenyl, aryl, alkylaryl; and b) optionally removing the functionalized carrier material.

Boron, phosphorus, arsenic, antimony and other impurities are at least partially removed from a mixture containing at least one chlorosilane and/or organochlorosilane by a) contacting the liquid mixture with a carrier material functionalized with an amidoxime of the general structural formula (I),

##STR00001##

where CAR=carrier material and R.sup.1, R.sup.2 are independently of one another H, alkyl, alkenyl, aryl, alkylaryl; and b) optionally removing the functionalized carrier material.

Described herein are methods for making alkenyl disiloxanes, comprising combining an alkenyl halosilane with a bis-hydrido terminated alkyl disiloxane and adding the mixture to water, an acidic aqueous solution, or a basic aqueous solution. The ratio of the alkenyl halosilane to the bis-hydrido terminated alkyl disiloxane is about 1:10 to about 10:1. The alkenyl halosilane and bis-hydrido terminated alkyl disiloxane are mixed at about 20° C. to about 45° C. In an example, no organic solvent is present. The reaction product is separated and washed with saturated NaHCO.sub.3 solution (e.g., sodium bicarbonate).

Described herein are methods for making alkenyl disiloxanes, comprising combining an alkenyl halosilane with a bis-hydrido terminated alkyl disiloxane and adding the mixture to water, an acidic aqueous solution, or a basic aqueous solution. The ratio of the alkenyl halosilane to the bis-hydrido terminated alkyl disiloxane is about 1:10 to about 10:1. The alkenyl halosilane and bis-hydrido terminated alkyl disiloxane are mixed at about 20° C. to about 45° C. In an example, no organic solvent is present. The reaction product is separated and washed with saturated NaHCO.sub.3 solution (e.g., sodium bicarbonate).

A process for removing an impurity from a mixture containing at least one chlorosilane and/or organochlorosilane and at least one impurity from the group comprising a boron compound, a phosphorus compound, and an arsenic compound is provided. The process includes contacting the liquid mixture with an unfunctionalized organic polymer having pores with an average pore diameter of less than 50 Å, the average pore diameter being determined in accordance with DIN ISO 66134, and optionally removing the unfunctionalized organic polymer.

An organic silicon compound having a ketimine structure can be recovered at a high yield through a method for producing an organic silicon compound having a ketimine structure represented by formula (1), the method having a step for reacting an amino-group-containing organic silicon compound represented by formula (2) and a carbonyl compound represented by formula (3) in the presence of an inorganic adsorbent.

##STR00001##

(In the formulas, R.sup.1 each independently represent a C1-10 alkyl group or a C6-10 aryl group, R.sup.2 each independently represent a C1-10 alkyl group or a C6-10 aryl group, R.sup.3 and R.sup.4 each independently represent a hydrogen atom, a C1-10 alkyl group, or a C6-10 aryl group, n represents an integer of 1-3, and m represents an integer of 1-12.)

##STR00002##

(In the formulas, R.sup.1-R.sup.4, n, and m are the same as above.)

An organic silicon compound having a ketimine structure can be recovered at a high yield through a method for producing an organic silicon compound having a ketimine structure represented by formula (1), the method having a step for reacting an amino-group-containing organic silicon compound represented by formula (2) and a carbonyl compound represented by formula (3) in the presence of an inorganic adsorbent.

##STR00001##

(In the formulas, R.sup.1 each independently represent a C1-10 alkyl group or a C6-10 aryl group, R.sup.2 each independently represent a C1-10 alkyl group or a C6-10 aryl group, R.sup.3 and R.sup.4 each independently represent a hydrogen atom, a C1-10 alkyl group, or a C6-10 aryl group, n represents an integer of 1-3, and m represents an integer of 1-12.)

##STR00002##

(In the formulas, R.sup.1-R.sup.4, n, and m are the same as above.)