A method of forming a hydrophobic and oleophobic surface. The method including spin coating an F-POSS with 3,3-dichloro-1,1,1,2,2,-pentafluoropropane/1,3-dichloro-1,1,2,2,3-pentafluoropropane onto an inert surface. The F-POSS has a structure:

##STR00001##

Each R.sub.f represents a nonreactive, fluorinated organic group, R.sub.1 represents a first monovalent organic group comprising at least two carbon atoms, and R.sub.2 represents hydrogen or a second monovalent organic group comprising at least two carbon atoms. The F-POSS with 3,3-dichloro-1,1,1,2,2,-pentafluoropropane/1,3-dichloro-1,1,2,2,3-pentafluoropropane are then dried on the inert surface.

A method of forming a hydrophobic and oleophobic surface. The method including spin coating an F-POSS with 3,3-dichloro-1,1,1,2,2,-pentafluoropropane/1,3-dichloro-1,1,2,2,3-pentafluoropropane onto an inert surface. The F-POSS has a structure:

##STR00001##

Each R.sub.f represents a nonreactive, fluorinated organic group, R.sub.1 represents a first monovalent organic group comprising at least two carbon atoms, and R.sub.2 represents hydrogen or a second monovalent organic group comprising at least two carbon atoms. The F-POSS with 3,3-dichloro-1,1,1,2,2,-pentafluoropropane/1,3-dichloro-1,1,2,2,3-pentafluoropropane are then dried on the inert surface.

Novel N-alkyl substituted perhydridocyclic silazanes, oligomeric N-alkyl perhydridosilazane compounds, and N-alkylaminodihydridohalosilanes, and a method for their synthesis are provided. The novel compounds may be used to form high silicon nitride content films by thermal or plasma induced decomposition.

Novel N-alkyl substituted perhydridocyclic silazanes, oligomeric N-alkyl perhydridosilazane compounds, and N-alkylaminodihydridohalosilanes, and a method for their synthesis are provided. The novel compounds may be used to form high silicon nitride content films by thermal or plasma induced decomposition.

This invention discloses oligosilane compounds. These compounds can be used in OLEDs.

This invention discloses oligosilane compounds. These compounds can be used in OLEDs.

Functionalized F-POSS compounds comprising synthetic blends of at least two feedstocks that produce a distribution of fluorinated polyhedral oligomeric silsesquioxane molecule structures and/or functional groups.

Functionalized F-POSS compounds comprising synthetic blends of at least two feedstocks that produce a distribution of fluorinated polyhedral oligomeric silsesquioxane molecule structures and/or functional groups.

A single vessel process for producing heteroleptic POSS compositions. The process involves the addition of two or more different organosilanes into a reactor containing a solvent. A base catalyst is added to the reactor to hydrolytically assemble the POSS cage core and statistically distribute the organic groups from the organosilanes around the periphery of the POSS cage core. An acid is then added to neutralize or quench the base catalyst. The product is washed and the remaining solvent is removed to recover the heteroleptic POSS. In some alternate embodiments, the product is filtered to recover the heteroleptic POSS. The heteroleptic POSS compositions produced by this process are able to provide an envelope of desirable effects. The heteroleptic POSS compositions may be used as additives for optimizing the performance attributes of coatings, biological materials, thermoplastics, thermoset, and gel polymer systems. The process also produces homoleptic POSS compositions with improved physical characteristics.

Materials containing picocrystalline quantum dots that form artificial atoms are disclosed. The picocrystalline quantum dots (in the form of born icosahedra with a nearly-symmetrical nuclear configuration) can replace corner silicon atoms in a structure that demonstrates both short range and long-range order as determined by x-ray diffraction of actual samples. A novel class of boron-rich compositions that self-assemble from boron, silicon, hydrogen and, optionally, oxygen is also disclosed. The preferred stoichiometric range for the compositions is (B.sub.12H.sub.w).sub.xSi.sub.yO.sub.z with 3≤w≤5, 2≤x≤4, 2≤y≤5 and 0≤z≤3. By varying oxygen content and the presence or absence of a significant impurity such as gold, unique electrical devices can be constructed that improve upon and are compatible with current semiconductor technology.