The present invention provides a tin compound represented by the following general formula (1) (in the formula (1), R.sup.1 to R.sup.4 each independently represent a hydrogen atom or an alkyl group having 1 to 12 carbon atoms, and R.sup.5 represents an alkanediyl group having 1 to 15 carbon atoms), a thin-film forming raw material including the compound, a thin-film formed by using the thin-film forming raw material, a method of using the compound as a precursor for producing the thin-film, and a method of producing a thin-film including: introducing a raw material gas obtained by vaporizing the thin-film forming raw material into a treatment atmosphere having a substrate set therein; and subjecting the tin compound in the raw material gas to decomposition and/or a chemical reaction in the treatment atmosphere, to thereby produce a thin-film containing a tin atom on a surface of the substrate.

##STR00001##

A light-emitting device with high resistance to heat in a fabrication process is provided. The light-emitting device includes an EL layer between an anode and a cathode. The EL layer includes at least a light-emitting layer and an electron-transport layer that includes a first electron-transport layer in contact with the light-emitting layer and a second electron-transport layer in contact with the first electron-transport layer. The first electron-transport layer includes a first heteroaromatic compound including at least one heteroaromatic ring. The second electron-transport layer includes a second heteroaromatic compound that includes at least one heteroaromatic ring and is different from the first heteroaromatic compound. The first heteroaromatic compound has a difference of 20° C. or less between the crystallization temperature (Tpc) of a powder state and the crystallization temperature (Ttc) of a thin film state. The second heteroaromatic compound has a difference of 100° C. or less between Tpc and Ttc.

Provided is a facile process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides organotin precursor compounds, for example tris(dimethylamido)isopropyl tin, in a highly pure form. As such, the products of the process are particularly useful in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

Organotin compounds are presented that are represented by the formula RSnL.sub.3, wherein R is a deuterated hydrocarbyl group and L is a hydrolysable ligand. Two different synthesis techniques are described for synthesizing these compositions. A first method involves reacting a primary halide hydrocarbyl compound (R—X, where X is a halide atom) with an organometallic composition comprising SnL3 moieties associated with metal cations M, where M is an alkali metal, alkaline earth metal, and/or pseudo-alkaline earth metal (Zn, Cd, or Hg), and L is either an amide ligand resulting in an alkali metal tin triamide compound or an acetylide ligand resulting in an alkali metal tin triacetylide, to form correspondingly a monohydrocarbyl tin triamide (RSn(NR′.sub.2).sub.3) or a monohydrocarbyl tin triacetylide (RSn(C≡CR.sub.s).sub.3). An alternative approach involves reacting a Grignard reagent RMgX with SnL.sub.4 in a solution comprising an organic solvent to form a monoorgano tin tralkylamide, a monoorgano tin trialkoxide, monoorgano tin tri acetylide or monoorgano tin tricarboxylate. The compositions are useful for radiation patterning, especially with EUV radiation.

According to the embodiment of the present disclosure, an organo tin compound is represented by the following Chemical Formula 1:

##STR00001## In Chemical Formula 1, L.sub.1 and L.sub.2 are each independently selected from an alkoxy group having 1 to 10 carbon atoms and an alkylamino group having 1 to 10 carbon atoms, R.sub.1 is a substituted or unsubstituted aryl group having 6 to 8 carbon atoms, and R.sub.2 is selected from a substituted or unsubstituted linear alkyl group having 1 to 4 carbon atoms, a branched alkyl group having 3 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an allyl group having 2 to 4 carbon atoms.

The invention provides a facile process for preparing certain organotin compounds having alkyl and aryl substituents. These compounds are useful as intermediates in the synthesis of certain alkylamino- and alkoxy-substituted alkyl tin compounds, which are in turn useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

To provide a novel photoelectric conversion device that is highly convenient, useful, or reliable. The photoelectric conversion device includes a first electrode, a second electrode, and a first unit. The first unit is located between the first electrode and the second electrode. The first unit contains a first electron-donating material and a first electron-accepting material. The first electron-donating material is a condensed aromatic compound, and the first electron-accepting material has a perylene skeleton and two or more alkyl groups. The alkyl groups each independently have 1 to 13 carbon atoms.

A method for forming a fluorinated oxostannate film involves vaporizing a volatile fluorinated alkyltin compound having at least two hydrolytically sensitive functional groups or at least two reactive functional groups which are sensitive to oxidation at a temperature greater than 200° C.; providing a substrate; physisorbing or chemisorbing the fluorinated alkyltin compound onto the substrate; and exposing the physisorbed or chemisorbed fluorinated alkyltin compound to a sequence of hydrolysis, irradiation, and/or oxidation steps to form the fluorinated oxostannate thin film on the substrate. Fluorinated alkyltin compounds having formula (I) are also described, in which R.sup.f is a fluorinated or partially fluorinated linear or branched alkyl group having about 1 to about 5 carbon atoms, X is a dialkylamino group having about 1 to about 4 carbon atoms, and n is 1 or 2:

(R.sup.fCH.sub.2).sub.nSnX.sub.(4-n)  (I)

The invention provides certain fluorinated alkyl tin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates. Also provided are processes for the preparation of the precursor compounds and processes for the use of such compounds in the deposition of tin-containing films onto microelectronic device substrates.

To provide an organic electroluminescent device having high efficiency and high driving stability while having a low driving voltage. The organic electroluminescent device has one or more light-emitting layers between an anode and a cathode opposed to each other, wherein at least one of the light-emitting layers is a light-emitting layer composed of a vapor deposition layer containing a first host, a second host and a light-emitting dopant material; the first host is selected from oligopyridine compounds represented by the general formula (1); and the second host is selected from carbazole compounds having two or more carbazole rings, indolocarbazole compounds having an indolocarbazole ring or compounds having a carbazole ring and an indolocarbazole ring.