Provided is a facile process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides organotin precursor compounds, for example tris(dimethylamido)isopropyl tin, in a highly pure form. As such, the products of the process are particularly useful in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

The purification of monoalkyl tin trialkoxides and monoalkyl tin triamides are described using fractional distillation and/or ultrafiltration. The purified compositions are useful as radiation sensitive patterning compositions or precursors thereof. The fractional distillation process has been found to be effective for the removal of metal impurities down to very low levels. The ultrafiltration processes have been found to be effective at removal of fine particulates. Commercially practical processing techniques are described.

The purification of monoalkyl tin trialkoxides and monoalkyl tin triamides are described using fractional distillation and/or ultrafiltration. The purified compositions are useful as radiation sensitive patterning compositions or precursors thereof. The fractional distillation process has been found to be effective for the removal of metal impurities down to very low levels. The ultrafiltration processes have been found to be effective at removal of fine particulates. Commercially practical processing techniques are described.

Provided is a facile methodology for preparing certain organotin compounds having alkyl and alkylamino or alkyl and alkoxy substituents. The process provides the organotin compounds in a highly pure form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

The present invention provides a process for producing monooctyltin trichloride comprising very low levels of dioctyltin and trioctyltin compounds, said process comprising the following steps: (1) Contacting an organotin chloride mixture comprising monooctyltin chloride with an aqueous phase containing halide ions, said step optionally being carried out in the presence of organic solvent; (2) separating the resulting aqueous phase which is rich in monooctyltin chloride from the organic phase containing most of the dioctyltin and trioctyltin compounds; (3) optionally purifying said aqueous phase comprising monooctyltin trichloride from undesired side products by washing said aqueous phase with an organic solvent; and (4) recovering monooctyltin trichloride from said aqueous phase comprising monooctyltin trichloride.

Provided is a facile methodology for preparing certain organotin compounds having alkyl and alkylamino or alkyl and alkoxy substituents. The process provides the organotin compounds in a highly pure form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

Provided is a facile process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides organotin precursor compounds, for example tris(dimethylamido)isopropyl tin, in a highly pure form. As such, the products of the process are particularly useful in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

Provided is a facile process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides organotin precursor compounds, for example tris(dimethylamido)isopropyl tin, in a highly pure form. As such, the products of the process are particularly useful in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

Provided is a facile methodology for preparing certain organotin compounds having alkyl and alkylamino or alkyl and alkoxy substituents. The process provides the organotin compounds in a highly pure form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

Monoalkyl tin triamide compounds having purity of at least about 99 mol % and the chemical formula RSn(NMe.sub.2).sub.3 are described. R.sup.1 is selected from R.sup.A, R.sup.B, and R.sup.C; R.sup.A is a primary alkyl group having about 1 to 10 carbon atoms, R.sup.B is a secondary alkyl group having about 3 to 10 carbon atoms, and R.sup.C is a tertiary alkyl group having about 3 to 10 carbon atoms; each R.sup.2 is independently an alkyl group having about 1 to 10 carbon atoms; and a content of R.sup.1Sn(NR.sup.2.sub.2).sub.2(N(R.sup.2)CH.sub.2NR.sup.2.sub.2) is less than about 1 mol %. Methods for synthesizing, purifying, and storing these compounds are also provided. The monoalkyl tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of dialkyl tin and other tin impurities.