C07F9/504

USE OF AT LEAST ONE BINARY GROUP 15 ELEMENT COMPOUND, A 13/15 SEMICONDUCTOR LAYER AND BINARY GROUP 15 ELEMENT COMPOUNDS

The invention provides the use of at least one binary group 15 element compound of the general formula R.sup.1R.sup.2E-E′R.sup.3R.sup.4 (I) or R.sup.5E(E′R.sup.6R.sup.7)2 (II) as the educt in a vapor deposition process. In this case, R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E′ are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.1 dimethyl hydrazine as the nitrogen source, which drastically reduces nitrogen contaminations—compared to the 13/15 semiconductors and/or 13/15 semiconductor layers produced with the known production methods.

Process for the generation of metallic films

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state, wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical.

Heptaphosphorus-derived compounds as flame retardants

The invention relates to flame retardant compositions comprising heptaphosphorus-derived compounds and to novel heptaphosphorus-derived compounds. These heptaphosphorus-derived compounds are especially useful for the manufacture of flame retardant compositions based on thermoplastic polymers, especially polyolefin homo- and copolymers, polycondensates, such as polyamides, or polyesters and duroplastic polymers, such as the ones based on polyepoxides.

PROCESS FOR THE GENERATION OF METALLIC FILMS

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state, wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical.

Use of at least one binary group 15 element compound, a 13/15 semiconductor layer and binary group 15 element compounds

The invention provides the use of at least one binary group 15 element compound of the general formula R.sup.1R.sup.2E-ER.sup.3R.sup.4 (I) or R.sup.5E(ER.sup.6R.sup.7)2 (II) as the educt in a vapor deposition process. In this case, R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.1 dimethyl hydrazine as the nitrogen source, which drastically reduces nitrogen contaminationscompared to the 13/15 semiconductors and/or 13/15 semiconductor layers produced with the known production methods.

HEPTAPHOSPHORUS-DERIVED COMPOUNDS AS FLAME RETARDANTS

The invention relates to flame retardant compositions comprising heptaphosphorus-derived compounds and to novel heptaphosphorus-derived compounds.

These heptaphosphorus-derived compounds are especially useful for the manufacture of flame retardant compositions based on thermoplastic polymers, especially polyolefin homo- and copolymers, polycondensates, such as polyamides, or polyesters and duro-plastic polymers, such as the ones based on polyepoxides.