The invention relates to a preparation process of a flame retardant composition made from brominated bismuth and/or antimony compounds complexed with melamine, in which melamine, at least one between the bismuth carbonate and antimony sesquioxide, hydrobromic acid in aqueous solution are placed in contact with each other so as to trigger chemical reactions which lead to the formation of a complex of brominated bismuth or brominated antimony with melamine and melamine bromohydrate. The reagents are placed in contact in the presence of at least one reaction carrier defined by at least one compound chosen from the group consisting of melamine, melamine phosphate, melamine polyphosphate, ammonium phosphate, ammonium polyphosphate, triphenyl-phosphate, graphite, silica, lignin, coke and compounds containing triazine rings condensed or linked by —NH groups. The reaction carrier is not involved in the reactions. There are no polymeric compounds in quantities such as to create a polymer matrix. The reagents being introduced into the reactor in an amount defined by the stoichiometric ratios of said reactions. The reaction carrier is introduced into the reactor in an amount defined with respect to the total weight of the reagents so that it can perform a modulator function.

The invention relates to metal complex compounds of the formula M.sub.k(L).sub.x(Y).sub.kz-nx, where the ligand L has the formula (I), and to metal complex compounds which include the reaction product of at least one salt or a complex of a transition metal or a main group metal element of the groups 13 to 15 and at least one 1,3-ketoamide. Such complex compounds are suitable in particular as catalysts for polyurethane compositions. The invention also relates to two-component polyurethane compositions including at least one polyisocyanate as the first component, at least one polyol as the second component, and at least one such metal complex compound as the catalyst. The invention additionally relates to different uses of the two-component polyurethane compositions.

The invention relates to a method for producing dialkylamido element compounds. In particular, the invention relates to a method for producing dialkylamido element compounds of the type E(NRR′).sub.x, wherein first WAIN is reacted with HNRR′ in order to form M[Al(NRR′).sub.4] and hydrogen, and then the formed M[Al(NRR′).sub.4] is reacted with EX.sub.x in order to form E(NRR′).sub.x and M[AlX.sub.4], wherein M=Li, Na, or K, R=C.sub.nH.sub.2n+1, where n=1 to 20, and independently thereof R′=C.sub.nH.sub.2n+1, where n=1 to 20, E is an element of the groups 3 to 15 of the periodic table of elements, X=F, Cl, Br, or I, and x=2, 3, 4 or 5.

An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

Provided are an iodine-containing metal compound, a composition for depositing a metal-containing thin film including the same, and a method of manufacturing a metal-containing thin film using the same. Since the composition for depositing a thin film according to one embodiment is present in a liquid state at room temperature, it has excellent storage and handling properties, and since the composition has high reactivity, a metal thin film may be efficiently formed using the composition.

An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

Organometallic photoresists suitable for use in deep ultraviolet (DUV) or extreme ultraviolet (EUV) lithography are provided. The organometallic photoresists contain an organometallic molecule having least a metal element M selected from the group consisting of Bi, Sb, and mixtures thereof, and having an oxidation state of 3+, and at least one polymerizable group R. A method of forming a patterned materials feature on a substrate utilizing the organometallic photoresist compositions is also provided.

An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

A sulfonium salt is formed of a sulfonium cation selected from a group indicated by general formulas (1), (2), and (3) and a gallate anion represented by formula (a). A photoacid generator is characterized in that said sulfonium salt is contained therein. An energy-ray curable composition contains the acid generator and a cationic polymerizable compound. A cured product is formed by curing these substances. ##STR00001##

A sulfonium salt is formed of a sulfonium cation selected from a group indicated by general formulas (1), (2), and (3) and a gallate anion represented by formula (a). A photoacid generator is characterized in that said sulfonium salt is contained therein. An energy-ray curable composition contains the acid generator and a cationic polymerizable compound. A cured product is formed by curing these substances.

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