A composition includes two or more near infrared absorbing compounds having an absorption maximum in a wavelength range of 650 to 1000 nm and having a solubility of 0.1 mass % or lower in water at 23° C., in which the two or more near infrared absorbing compounds include a first near infrared absorbing compound having an absorption maximum in a wavelength range of 650 to 1000 nm, and a second near infrared absorbing compound having an absorption maximum in a wavelength range of 650 to 1000 nm which is shorter than the absorption maximum of the first near infrared absorbing compound, and a difference between the absorption maximum of the first near infrared absorbing compound and the absorption maximum of the second near infrared absorbing compound is 1 to 150 nm.

The present invention provides a positive tone resist composition containing (A) an ionic compound and (B) a resin that has a repeating unit (b1) having an interactive group which interacts with an ionic group in the ionic compound and of which a main chain is decomposed by an irradiation with X-rays, electron beam, or extreme ultraviolet rays; a resist film formed of the positive tone resist composition; a pattern forming method; and a method for manufacturing an electronic device.

The present invention provides a positive tone resist composition containing (A) an ionic compound and (B) a resin that has a repeating unit (b1) having an interactive group which interacts with an ionic group in the ionic compound and of which a main chain is decomposed by an irradiation with X-rays, electron beam, or extreme ultraviolet rays; a resist film formed of the positive tone resist composition; a pattern forming method; and a method for manufacturing an electronic device.

Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the polymer comprises polymerized units of general formulas (I) and (II): ##STR00001##
wherein: X independently represents a halogen atom; Q represents a single bond, —O—, or —C(O)O—; R.sub.1 independently represents hydrogen, a halogen atom, C1-C12 alkyl or C1-C12 fluoroalkyl; R.sub.2 represents C1-C3 alkyl or C1-C3 fluoroalkyl; and m is an integer from 0 to 4; and wherein the polymerized units of general formula (I) are present in the polymer in an amount of 10 to 90 mol % and the polymerized units of general formula (II) are present in the polymer in an amount from 10 to 60 mol %, based on total polymerized units of the polymer. The photoresist pattern trimming compositions and their use in pattern formation methods find particular applicability in the manufacture of semiconductor devices.

Provided is a polymer compound having a repeating unit represented by Formula 1A below:

##STR00001##

wherein in Formula 1A, Z.sup.1 represents a hydrogen atom or a monovalent group, R.sup.1 represents a group represented by Formula 1B, L.sup.1 represents a divalent group, n represents an integer of 1 or more, and in in Formula 1B, L.sup.2 represents a single bond or a divalent group, R.sup.2 represents a group selected from the group consisting of a hydroxy group and a group represented by *—OR.sup.3, R.sup.3 represents a hydrocarbon group which may have a hetero atom, a plurality of R.sup.3's may be bonded to each other to form a ring, * represents a bonding position, m represents an integer of 1 to 5, and a plurality of L.sup.1's and a plurality of R.sup.2's may be the same as or different from each other.

Provided is a polymer compound having a repeating unit represented by Formula 1A below:

##STR00001##

wherein in Formula 1A, Z.sup.1 represents a hydrogen atom or a monovalent group, R.sup.1 represents a group represented by Formula 1B, L.sup.1 represents a divalent group, n represents an integer of 1 or more, and in in Formula 1B, L.sup.2 represents a single bond or a divalent group, R.sup.2 represents a group selected from the group consisting of a hydroxy group and a group represented by *—OR.sup.3, R.sup.3 represents a hydrocarbon group which may have a hetero atom, a plurality of R.sup.3's may be bonded to each other to form a ring, * represents a bonding position, m represents an integer of 1 to 5, and a plurality of L.sup.1's and a plurality of R.sup.2's may be the same as or different from each other.

A photoinitiated polymerizable composition for 3D printing, the polymerizable composition comprising a nanogel component that comprises nanogel particles, wherein the nanogel particles comprise a copolymer with polymerizable reactive groups suitable for reacting with each other or a reactive diluent monomer, a reactive oligomer, a resin, or a combination thereof that is present in the polymerizable composition upon photoinitiation, wherein the nanogel component has a glass transition temperature that is in a range of about −50 C and about 20 C and an average molecular weight that is in a range of about 10 kg/mol and about 100 kg/mol, and wherein the nanoparticles have an average hydrodynamic radius that is in a range of 1 nm to about 5 nm.

A processing aid for foam molding comprising a copolymer obtained by the polymerization of from 50% to 100% by weight total of one or more monomers selected from the group consisting of ethyl methacrylate and propyl methacrylate, and 0 to 50% by weight of other copolymerizable monomers, the copolymer having the following properties: (a) a reduced viscosity measured according to ASTM D2857 at 1 mg/mL in chloroform at 25° C. of greater than 8 dL/g and (b) a Tg equal to or less than 77° C. is provided.

A processing aid for foam molding comprising a copolymer obtained by the polymerization of from 50% to 100% by weight total of one or more monomers selected from the group consisting of ethyl methacrylate and propyl methacrylate, and 0 to 50% by weight of other copolymerizable monomers, the copolymer having the following properties: (a) a reduced viscosity measured according to ASTM D2857 at 1 mg/mL in chloroform at 25° C. of greater than 8 dL/g and (b) a Tg equal to or less than 77° C. is provided.

An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition which has an excellent resolution and is capable of forming a pattern having suppressed defects. Another object of the present invention is to provide a resist film, a pattern forming method, and a method for manufacturing an electronic device, each relating to the actinic ray-sensitive or radiation-sensitive resin composition.

The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes a resin of which polarity increases through decomposition by an action of an acid, and a compound that generates an acid upon irradiation with actinic rays or radiation, in which the resin of which polarity increases through decomposition by an action of an acid includes one or more selected from the group consisting of repeating units represented by Formulae (1) to (5), and the compound that generates an acid upon irradiation with actinic rays or radiation includes any one or more of a compound (I) or a compound (II).