A resist composition comprising a base polymer and an acid generator containing a sulfonium salt having the formula (1) or an iodonium salt having the formula (2). ##STR00001##

A resin produced by a conventional technique has a weak nature in terms of hydrolysis resistance. For example, in a case where the resin produced by a conventional technique is used in an area with a highly humid climate such as Japan for a long period of time, deterioration of the resin due to hydrolysis becomes a concern. A resin composition is described that is optimized in the molecular structure design of the resin and in the catalyst in order to improve the hydrolysis resistance. Specifically, the resin composition contains (1) a copolymer of a vinyl compound having two or more epoxy groups, a carboxylic acid anhydride, and a transesterification reaction catalyst, or (2) a copolymer of a vinyl compound having two or more carboxylic acid anhydride groups, an epoxy, and a transesterification reaction catalyst.

Disclosed are hydrophobic, acrylic materials having both high refractive index and a high Abbe number. The materials may have an internal wetting agent, are well suited for use as implantable ophthalmic devices, and have a refractive index which may be edited through application of energy. When used for an intraocular lens, the high refractive index allows for a thin lens which compresses to allow a small incision size.

A window module including a window, a first print layer, an ink layer, and a protective layer covering the ink layer. The protective layer includes a polymer resin polymerized from monomers including a first monomer which is an acrylic monomer substituted with a hydroxy group, a second monomer having an epoxy group, and at least one of a third monomer having a substituted or unsubstituted phenyl group or a fourth monomer which is an acrylic monomer having a substituted or unsubstituted bicyclic alkyl group, and thus, has excellent durability, chemical resistance, and abrasion resistance.

A quantum dot, a quantum dot composite including the quantum dot, a composition for preparing the quantum dot composite, a display panel including the quantum dot composite, and an electronic apparatus including the display panel. The quantum dot includes a semiconductor nanocrystal core including indium and phosphorus, the semiconductor nanocrystal core having an emission peak wavelength from about 600 nm to about 650 nm, or an emission peak wavelength from about 500 nm to about 550 nm, and an area of a peak from about 400° C. to about 500° C. is 0.17 times to 0.5 times relative to an area of a peak from about 200° C. to about 300° C. in a thermogravimetric analysis (TGA) graph as determined with a differential scanning calorimeter (DSC).

A photoresist composition comprising: a resin which has a structural unit represented by formula (I): ##STR00001##
wherein R.sup.1 represents a hydrogen atom, a halogen atom, or a C1 to C6 alkyl group which optionally has a halogen atom, and R.sup.2 represents a C1 to C42 hydrocarbon group which optionally has a substituent; an alkali-soluble resin; an acid generator; and a solvent.

Provided are photoresist compositions for EUV and methods for manufacturing a semiconductor device using the same. The photoresist compositions for EUV include a photosensitive resin, a photoacid generator, and an additive, wherein the additive comprises a copolymer including a first repeating unit that includes a fluoroalkyl group or hydrocarbon group substituted with one or more fluoroalkyl group(s), and a second repeating unit that includes a sulfonic acid group and an amide group.

A process of forming a cross-linked electronically active hydrophilic co-polymer is provided and includes the steps of: a. mixing an intrinsically electronically active material and at least one compound of formula (I) with water to form an intermediate mixture; b. adding at least one hydrophilic monomer, at least one hydrophobic monomer, and at least one cross-linker to the intermediate mixture to form a co-monomer mixture; and c. polymerising the co-monomer mixture. Formula (I) is defined as: ##STR00001##
where R.sup.1 and R.sup.2 are independently optionally substituted C.sub.1-C.sub.6 alkyl and X.sup.− is an anion.

A fluorocarboxylic acid-containing polymer comprising recurring units having formula (A1), but not acid labile group-containing recurring units is provided. A resist composition comprising the same offers a high sensitivity and is unsusceptible to nano-bridging or pattern collapse independent of whether it is of positive or negative tone. ##STR00001##

A method for producing a composition for forming a non-photosensitive upper layer film that is disposed on a workpiece and a photosensitive resist film, the production method includes cleaning a production device for a composition X.sub.A for forming a non-photosensitive upper layer film with a cleaning liquid to clean the production device until a concentration of a resin included in the cleaning liquid reaches 10 ppm by mass or less, discharging the cleaning liquid from the production device, and producing the composition X.sub.A for forming a non-photosensitive upper layer film using the production device. The cleaning, the discharging, and the producing are performed in this order.