[Problem] To obtain a thermosetting resin composition that has curing performance at a lower temperature and uses transesterification capable of also suitably coping with conversion into an aqueous form as a curing reaction.

[Solution] A thermosetting resin composition containing a resin component (A), which includes a structure (a) represented by the following general formula (1) and a hydroxy group (b), and a transesterification catalyst (B).

##STR00001##

n=0 to 20

R.sub.1 is an alkyl group having 50 or less carbon atoms.

R.sub.3 is hydrogen or an alkyl group having 10 or less carbon atoms.

A resist composition is provided comprising a base polymer and a quencher comprising a salt compound consisting of a cyclic ammonium cation and a 1,1,1,3,3,3-hexafluoro-2-propoxide anion having a trifluoromethyl, hydrocarbylcarbonyl or hydrocarbyloxycarbonyl group bonded thereto. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

A quantum dot, a quantum dot composite including the quantum dot, a composition for preparing the quantum dot composite, a display panel including the quantum dot composite, and an electronic apparatus including the display panel. The quantum dot includes a semiconductor nanocrystal core including indium and phosphorus, the semiconductor nanocrystal core having an emission peak wavelength from about 600 nm to about 650 nm, or an emission peak wavelength from about 500 nm to about 550 nm, and an area of a peak from about 400° C. to about 500° C. is 0.17 times to 0.5 times relative to an area of a peak from about 200° C. to about 300° C. in a thermogravimetric analysis (TGA) graph as determined with a differential scanning calorimeter (DSC).

A resist topcoat composition and a method of forming patterns utilizing the resist topcoat composition are disclosed. The resist topcoat composition includes an acrylic polymer comprising a structural unit comprising a hydroxy group and a fluorine; a mixture comprising a first acid compound comprising at least one fluorine; and a second acid compound different from the first acid compound and comprising at least one fluorine, the first acid compound and the second acid compound are each independently selected from a sulfonic acid compound and a sulfonimide compound, the first acid compound and the second acid compound being in a weight ratio of about 1:0.1 to about 1:50; and a solvent.

A method of forming a photoresist pattern and a semiconductor device on which a photoresist pattern manufactured according to the same is formed. The method includes forming a photoresist pattern on a substrate; coating an organic topcoat composition including an acrylic polymer including a structural unit containing a hydroxy group and a fluorine and an acidic compound on the photoresist pattern; drying and heating the substrate on which the organic topcoat composition is coated to coat it with a topcoat; and spraying a rinse solution including an ether-based compound on the substrate coated with the topcoat to remove the topcoat.

A photoresist composition comprising: a resin which has a structural unit represented by formula (I): ##STR00001##
wherein R.sup.1 represents a hydrogen atom, a halogen atom, or a C1 to C6 alkyl group which optionally has a halogen atom, and R.sup.2 represents a C1 to C42 hydrocarbon group which optionally has a substituent; an alkali-soluble resin; an acid generator; and a solvent.

An object of the present invention is to provide an optical laminate in which optically anisotropic layers exhibiting reverse wavelength dispersibility have excellent moisture-heat resistance, and the adhesiveness between a first optically anisotropic layer and a second optically anisotropic layer is excellent; and a polarizing plate and an image display device, each using the optical laminate. The optical laminate according to an embodiment of the present invention is an optical laminate having a first optically anisotropic layer and a second optically anisotropic layer, in which both of the first optically anisotropic layer and the second optically anisotropic layer are directly laminated and consist of a liquid crystal layer, at least one of the first optically anisotropic layer or the second optically anisotropic layer exhibits reverse wavelength dispersibility, a photo-alignment polymer having a photo-alignment group and a fluorine atom or a silicon atom is present on a surface of the second optically anisotropic layer on a side in contact with the first optically anisotropic layer, and an element ratio of fluorine or silicon on the surface of the second optically anisotropic layer on the side in contact with the first optically anisotropic layer is 0.05% to 15.00% by atom.

Provided are photoresist compositions for EUV and methods for manufacturing a semiconductor device using the same. The photoresist compositions for EUV include a photosensitive resin, a photoacid generator, and an additive, wherein the additive comprises a copolymer including a first repeating unit that includes a fluoroalkyl group or hydrocarbon group substituted with one or more fluoroalkyl group(s), and a second repeating unit that includes a sulfonic acid group and an amide group.

A process of forming a cross-linked electronically active hydrophilic co-polymer is provided and includes the steps of: a. mixing an intrinsically electronically active material and at least one compound of formula (I) with water to form an intermediate mixture; b. adding at least one hydrophilic monomer, at least one hydrophobic monomer, and at least one cross-linker to the intermediate mixture to form a co-monomer mixture; and c. polymerising the co-monomer mixture. Formula (I) is defined as: ##STR00001##
where R.sup.1 and R.sup.2 are independently optionally substituted C.sub.1-C.sub.6 alkyl and X.sup.− is an anion.

A process of forming a cross-linked electronically active hydrophilic co-polymer is provided and includes the steps of: a. mixing an intrinsically electronically active material and at least one compound of formula (I) with water to form an intermediate mixture; b. adding at least one hydrophilic monomer, at least one hydrophobic monomer, and at least one cross-linker to the intermediate mixture to form a co-monomer mixture; and c. polymerising the co-monomer mixture. Formula (I) is defined as: ##STR00001##
where R.sup.1 and R.sup.2 are independently optionally substituted C.sub.1-C.sub.6 alkyl and X.sup.− is an anion.