The present invention is a compound represented by the following general formula (1). ##STR00001##

The present invention is a compound represented by the following general formula (1). ##STR00001##

The resist composition of the present invention contains one or more selected from compounds represented by specific formulae and resins obtained using these as monomers.

The resist composition of the present invention contains one or more selected from compounds represented by specific formulae and resins obtained using these as monomers.

A composition for forming a resist underlayer film containing a solvent and polymer comprising a unit structure (A) represented by formula (1) and/or formula (2). The composition is capable of forming a hydrophobic underlayer film that has a high contact angle with pure water and exhibits high adhesion to an upper layer film, thereby being not susceptible to separation therefrom, while meeting the requirement of good coatability, the composition being also capable of exhibiting other good characteristics such as sufficient resistance to a chemical agent that is used for resist underlayer films.

A composition for forming a resist underlayer film containing a solvent and polymer comprising a unit structure (A) represented by formula (1) and/or formula (2). The composition is capable of forming a hydrophobic underlayer film that has a high contact angle with pure water and exhibits high adhesion to an upper layer film, thereby being not susceptible to separation therefrom, while meeting the requirement of good coatability, the composition being also capable of exhibiting other good characteristics such as sufficient resistance to a chemical agent that is used for resist underlayer films.

A method for reducing the level difference (iso-dense bias) (reverse bump) of a resist underlayer film formed on a semiconductor substrate having a stepped portion and a non-stepped portion by 5 nm or more, which comprises a step of applying the composition to an upper surface of the semiconductor substrate having a stepped portion and a non-stepped portion. A method for reducing the level difference (iso-dense bias) of a resist underlayer film, comprising the steps of adding a fluorine-containing surfactant to a resist underlayer film-forming composition containing a polymer and a solvent and applying the composition containing the fluorine-containing surfactant to an upper surface of a semiconductor substrate having a stepped portion and a non-stepped portion. The level difference of a resist underlayer film formed on a semiconductor substrate between a stepped portion and a non-stepped portion (i.e., reverse bump) is reduced by 5 nm or more.

A composition for film formation for lithography of the present invention comprises at least one selected from the group consisting of an aromatic hydrocarbon formaldehyde resin and a modified aromatic hydrocarbon formaldehyde resin, wherein the aromatic hydrocarbon formaldehyde resin is a product of condensation reaction between an aromatic hydrocarbon having a substituted or unsubstituted benzene ring and formaldehyde, and the modified aromatic hydrocarbon formaldehyde resin is formed by modifying the aromatic hydrocarbon formaldehyde resin.

A method for reducing the level difference (iso-dense bias) (reverse bump) of a resist underlayer film formed on a semiconductor substrate having a stepped portion and a non-stepped portion by 5 nm or more, which comprises a step of applying the composition to an upper surface of the semiconductor substrate having a stepped portion and a non-stepped portion. A method for reducing the level difference (iso-dense bias) of a resist underlayer film, comprising the steps of adding a fluorine-containing surfactant to a resist underlayer film-forming composition containing a polymer and a solvent and applying the composition containing the fluorine-containing surfactant to an upper surface of a semiconductor substrate having a stepped portion and a non-stepped portion. The level difference of a resist underlayer film formed on a semiconductor substrate between a stepped portion and a non-stepped portion (i.e., reverse bump) is reduced by 5 nm or more.

A resist underlayer film-forming composition that exhibits a high etching resistance, a favorable dry etching rate ratio and optical constant, and can form a film exhibiting a good coatability even to a so-called uneven substrate, providing a small difference in film thickness after embedding, and having planarity and a superior hardness; a resist underlayer film formed from the resist underlayer film-forming composition; and a method of producing a semiconductor device. The composition including a reaction product between a compound of the following Formula (1) or (2) and a compound of the following Formula (3), and a solvent:

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