The present invention is directed to the use as a reactive component in the curing of compositions based on epoxy resins of a functionalized α-angelica lactone (XOMAL) having the general formula: ##STR00001##
wherein: R.sup.a is a C.sub.1-C.sub.30 alkyl, C.sub.3-C.sub.30 cycloalkyl, C.sub.6-C.sub.18 aryl or C.sub.2-C.sub.12 alkenyl group.

An aqueous ink jet composition contains: C.I. Disperse Red 364; a material A which is at least one compound selected from the group consisting of a compound represented by the following formula (1), a compound represented by the following formula (2), an ethylene oxide adduct of tristyrylphenol, a derivative of the ethylene oxide adduct of tristyrylphenol, a polyalkylene glycol, and a derivative of the polyalkylene glycol; and an anionic dispersant. ##STR00001##

The present invention is directed to the use as a reactive component in the curing of compositions based on epoxy resins of a functionalized α-angelica lactone (XOMAL) having the general formula:

##STR00001##

wherein: R.sup.a is a C.sub.1-C.sub.30 alkyl, C.sub.3-C.sub.30 cycloalkyl, C.sub.6-C.sub.18 aryl or C.sub.2-C.sub.12 alkenyl group.

The present invention provides a composition for forming an organic film, containing a polymer compound having one or more of repeating units shown by the general formulae (1) to (4) and an organic solvent containing one or more compounds selected from propylene glycol esters, ketones, and lactones, with a total concentration of more than 30 wt % with respect to the whole organic solvent. There can be provided a composition capable of forming an organic film that can be easily removed, together with a silicon residue modified by dry etching, in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process. ##STR00001##

The method includes mixing an aldehyde and a first solvent to form a mixture. The method further includes mixing an organosulfur phenol and an aromatic compound to the mixture to form a phenol mixture and heating the phenol mixture in the presence of an acid to form a solid. The solid is dried to obtain the cross-linked porous polymer. The obtained cross-linked porous polymer has repeat pyrrole units bonded to one another, and the cross-linked porous polymer has a thiol group which separates non-adjacent pyrrole units. The cross-linked porous polymer obtained after drying is in a form of solid particles having a spherical particle structure.

An aqueous ink jet composition contains: C.I. Disperse Red 364; a material A which is at least one compound selected from the group consisting of a compound represented by the following formula (1), a compound represented by the following formula (2), an ethylene oxide adduct of tristyrylphenol, a derivative of the ethylene oxide adduct of tristyrylphenol, a polyalkylene glycol, and a derivative of the polyalkylene glycol; and an anionic dispersant.

##STR00001##

The present invention provides a resist multilayer film-attached substrate, including a substrate and a resist multilayer film formed on the substrate, in which the resist multilayer film has an organic resist underlayer film difficultly soluble in ammonia hydrogen peroxide water, an organic film soluble in ammonia hydrogen peroxide water, a silicon-containing resist middle layer film, and a resist upper layer film laminated on the substrate in the stated order. There can be provided a resist multilayer film-attached substrate that enables a silicon residue modified by dry etching to be easily removed in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.

The present invention is a dispersant composition for a hydraulic composition, which includes (A) a cement dispersant composed of a polymer having a naphthalene ring-containing monomer unit, and (B) one or more specific alkylene oxide-added compounds represented by the general formula (B1), wherein a molar ratio of a total amount of (B) to the naphthalene ring-containing monomer unit in (A) is 3% or more and 16% or less.

The present invention provides a resist multilayer film-attached substrate, including a substrate and a resist multilayer film formed on the substrate, in which the resist multilayer film has an organic resist underlayer film difficultly soluble in ammonia hydrogen peroxide water, an organic film soluble in ammonia hydrogen peroxide water, a silicon-containing resist middle layer film, and a resist upper layer film laminated on the substrate in the stated order. There can be provided a resist multilayer film-attached substrate that enables a silicon residue modified by dry etching to be easily removed in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.

The present invention provides a composition for forming an organic film, containing a polymer compound having one or more of repeating units shown by the general formulae (1) to (4) and an organic solvent containing one or more compounds selected from propylene glycol esters, ketones, and lactones, with a total concentration of more than 30 wt % with respect to the whole organic solvent. There can be provided a composition capable of forming an organic film that can be easily removed, together with a silicon residue modified by dry etching, in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.

##STR00001##