There is provided a resist overlayer film forming composition for use in a lithography process in semiconductor device production, which does not intermix with a resist, blocks undesirable exposure light particularly in EUV exposure, for example, UV and DUV and selectively transmits EUV alone, and which can be developed with a developer after exposure. A resist overlayer film forming composition comprising: a polymer including an organic group including a linear or branched saturated alkyl group having a carbon atom number of 1 to 10, in which some or all of hydrogen atoms thereof are substituted with fluorine atoms, and an optionally substituted C.sub.8-16 ether compound as a solvent.

An electrocatalyst includes a substrate and a microporous polymer on the substrate. The microporous polymer includes, in polymerized form, a triptycene of Formula (I) ##STR00001## and a phenothiazine of Formula (II) ##STR00002## where in Formula (I), R.sub.1-14 each individually represent hydrogen, an optionally substituted alkyl, an optionally substituted aryl, with at least two representing hydrogen and in Formula (II), R.sub.15-23 each individually represent hydrogen, an optionally substituted alkyl. The triptycene of Formula (I) and the phenothiazine of Formula (II) are linked by methylene units.