Patent classifications
C
C08
C08G
16/00
C08G16/02
C08G16/0287
C08G16/0287
COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMATION METHOD
The present invention provides a composition for resist underlayer film formation comprising a tellurium-containing compound or a tellurium-containing resin.