Objects of the present invention are to provide an organic semiconductor element in which carrier mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, and a manufacturing method thereof, to provide a novel compound suitable for an organic semiconductor, and to provide an organic semiconductor film in which mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, a manufacturing method thereof, and an organic semiconductor composition that can suitably form the organic semiconductor film.

The organic semiconductor element according to the present invention is an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1 and having a molecular weight of 2,000 or greater.

D-A  (1)

An infrared absorption composition includes a p-type semiconductor compound including a first structural unit represented by Chemical Formula 1 and a second structural unit including an electron donating moiety; and an n-type semiconductor compound represented by Chemical Formula 2:

##STR00001## wherein, in Chemical Formula 1, Ar.sup.1, X, R.sup.1a, and R.sup.2a are the same as defined in the detailed description. In Chemical Formula 2, A.sup.1, A.sup.2, D.sup.1, D.sup.2, and D.sup.3 are the same as defined in the detailed description.

An organic photovoltaic device includes an anode and a cathode. The organic photovoltaic device includes an active layer between the anode and the cathode. The active layer includes a p-type material. The p-type material includes a donor-acceptor (DA) polymer. An acceptor unit of the DA polymer includes a functionalized pyranopyran-dione compound or a functionalized naphthyridine-dione compound.

Disclosed are an organic semiconductor thin film, a manufacturing method thereof, and a thin film transistor and an electronic device including the organic semiconductor thin film. The organic semiconductor thin film includes a matrix. The matrix includes an elastomer and nanoconfined polymer structures embedded in the matrix. The nanoconfined polymer structures form a polymer network. The nanoconfined polymer structures include a conjugation semiconductor polymer. The conjugation semiconductor polymer includes a repeating unit having at least one conjugation system in its main chain. The nanoconfined polymer structures are present in an upper surface layer and a lower surface layer of the organic semiconductor thin film respectively.

Objects of the present invention is to provide an organic semiconductor element having high mobility and excellent temporal stability under high humidity, and a manufacturing method thereof, to provide a novel compound which is suitable as an organic semiconductor, and to provide an organic semiconductor film having high mobility and excellent temporal stability under high humidity and a manufacturing method thereof, and a composition for forming an organic semiconductor film that can suitably form the organic semiconductor film.

The organic semiconductor element according to the present invention has an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1.

##STR00001##

An object of the invention is to provide an organic semiconductor element in which mobility is high, heat resistance is excellent, and variation of mobility is suppressed, and a manufacturing method thereof, to provide a novel compound that is suitable as an organic semiconductor, and to provide an organic semiconductor film in which mobility is high, heat resistance is excellent, and variation of mobility is suppressed and a composition for forming an organic semiconductor film that can suitably form the organic semiconductor film.

The organic semiconductor element according to the invention has an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1 or 2 below.

##STR00001##

An object of the invention is to provide an organic semiconductor element having high mobility and excellent temporal stability under high humidity, and a manufacturing method thereof. Another object is to provide a novel compound suitable for an organic semiconductor. Still another object is to provide an organic semiconductor film having high mobility and excellent temporal stability under high humidity and a composition for forming an organic semiconductor film that can suitably form the organic semiconductor film.

The organic semiconductor element according to the invention includes an organic semiconductor layer containing an organic semiconductor having a repeating unit represented by Formula 1.

##STR00001##

A method for manufacturing an electrolytic capacitor is provided. A conductive polymer solution is applied onto a porous main body. The porous main body includes a porous electrode body having an electrode material and a dielectric layer covering an outer surface of the electrode material. The conductive polymer solution contains conductive polymer particles whose average particle size ranges from 0.5 nm to 50 nm. A solid electrolyte is formed to completely or partially cover a surface of the dielectric layer. A material of the conductive polymer particles includes at least one of polythiophene having at least one sulfonic acid group and polyselenophene having at least one sulfonic acid group. An electrical conductivity of a dry membrane formed from the conductive polymer particles is higher than 25 S/cm. An amount of metal cations in the conductive polymer solution is less than 500 mg/kg.

A method for manufacturing an electrolytic capacitor is provided. A crosslinking agent is applied onto a capacitor body. A solution containing a conjugated polymer is applied onto the capacitor body after applying the crosslinking agent. A part of a solvent of the solution is removed, so as to form a polymer outer layer onto the capacitor body. The capacitor body includes an electrode body, an electrode material, a dielectric layer, and a solid electrolyte. The electrode material is formed on the electrode body. A surface of the electrode material is covered by the dielectric layer. The dielectric layer is covered by the solid electrolyte. The electrode body or the solid electrolyte is formed from at least one of polythiophene having at least one sulfonic acid group and polyselenophene having at least one sulfonic acid group.

Disclosed are an infrared absorbing polymer including a first structural unit represented by Chemical Formula 1 and a second structural unit including at least one of Chemical Formula 2A to Chemical Formula 2I, an infrared absorbing/blocking film, a photoelectric device, a sensor, and an electronic device.