The present disclosure relates to a coating method of implant using parylene, for coating a surface of a dental implant, including a pretreating step of pretreating the implant; and a coating step of coating a surface of the pretreated implant with a coating material to form a polymer coating layer, wherein the coating material is provided as parylene.

According to the present disclosure, a parylene thin film may be uniformly coated on the surface of the dental implant, and according to such a thin film, the growth of anaerobic bacteria can be effectively inhibited in spaces where the fixture and the upper structure of the dental implant are joined to each other, and where the upper structure and the crown are joined to each other.

A novel polyfluorene-based ionomer, an anion exchange membrane, a method for preparing the polyfluorene-based ionomer, and a method for fabricating the anion exchange membrane are proposed. The polyfluorene-based ionomer contains no aryl ether bonds in the polymer backbone and includes piperidinium groups incorporated into the repeating units. The anion exchange membrane is fabricated from the polyfluorene-based ionomer. The anion exchange membrane has good thermal and chemical stability, excellent mechanical properties, and high ion conductivity. Due to these advantages, the anion exchange membrane can be applied as a membrane for an alkaline fuel cell and to a binder for an alkaline fuel cell or water electrolysis.

A compound of formula 1:

##STR00001##

where X and Y are each a different optional organic group. When there is a plurality of X, each X in the plurality of X may be the same as or different from each other. When there is a plurality of Y, each Y in the plurality of Y may be the same as or different from each other. R represents a hydrocarbon group having 1 to 10 carbon atoms or a halogenated alkyl group. When there is a plurality of R, each R in the plurality of R may be the same as or different from each other. Variable m is an integer of 0 to 3, n is a repeating unit and satisfies 1≤n≤20, and p is a repeating unit and satisfies 0≤p≤20.

The invention provides a photoinduced-nonlinear-expansion coordination polymer and preparation method thereof. The coordination polymer has a chemical formula of [Zn(iba)(tkpvb)Cl].sub.n1, wherein iba represents p-iodobenzoate, tkpvb represents 1,2,4,5-tetrakis((E)-2-(4-pyridyl)vinyl)benzene, and n=3000-60000; and crystallographic parameters of: (1) crystal system: monoclinic system; (2) space group: Cc; (3) a = 28.6156(16) Å, b = 7.2901(4) Å, c = 21.5157(13) Å, β = 127.430(4)°, and V = 3574.2(4) Å.sup.3; (4) Z = 4; and (5) F(000) = 1680, R.sub.1 = 0.1363, wR.sub.2 = 0.3788, and GOF = 1.620; wherein iba represents p-iodobenzoate, tkpvb represents 1,2,4,5-tetrakis((E)-2-(4-pyridyl)vinyl)benzene, and n1=3000-60000. The preparation method of the coordination polymer of the present invention is simple, and has mild reaction conditions, and fast light conversion rate. Moreover, the coordination polymer undergoes an addition reaction, exhibits the photoinduced nonlinear expansion performance of the material, and affords a corresponding isomeric compound under the irradiation of light of various wavelengths.

The present invention provides: a rubber composition having a good low heat generation property and is excellent in high elastic modulus and fracture resistance, and a tire using the rubber composition. The rubber composition contains a rubber component that contains a diene rubber, and the diene rubber contains a polymer (A) of a copolymer that has, in one molecule, a block moiety containing a urethane backbone segment and a block moiety containing a diene backbone segment.

Provided are: a resist underlayer film formation composition combining high etching resistance, high heat resistance, and excellent coating properties; a resist underlayer film in which the resist underlayer film formation composition is used and a method for manufacturing the resist underlayer film; a method for forming a resist pattern; and a method for manufacturing a semiconductor device. The resist underlayer film formation composition is characterized by including the compound represented by Formula (1), or a polymer derived from the compound represented by Formula (1) (where: AA represents a single bond or a double bond; X.sup.1 represents —N(R.sup.1)—; X.sup.2 represents —N(R.sup.2)—; X.sup.3 represents —CH(R.sup.3)—; X.sup.4 represents —CH(R.sup.4)— etc.; R.sup.1, R.sup.2, R.sup.3, and R.sup.4 represent hydrogen atoms, C1-20 straight chain, branched, or cyclic alkyl groups, etc.; R.sup.5, R.sup.6, R.sup.9, and R.sup.10 represent hydrogen atoms, hydroxy groups, alkyl groups, etc.; R.sup.7 and R.sup.8 represent benzene rings or naphthalene rings; and n and o are 0 or 1). A semiconductor device is manufactured by: coating the composition on a semiconductor substrate, firing the coated composition, and forming a resist underlayer film; forming a resist film thereon with an inorganic resist underlayer film interposed therebetween selectively as desired; forming a resist pattern by irradiating light or electron radiation and developing; etching the underlayer film using the resist pattern; and processing the semiconductor substrate using the patterned underlayer film.

Polymer embodiments comprising nanohoop-containing polymer backbones are described, along with methods of making and using the same. The polymer embodiments exhibit unique radial and linear conjugation and can be used in a variety of devices, such as electronic and/or optoelectronic devices.

Disclosed is a fluorine-substituted Pi(π)bridge selenide polymer acceptor material, its preparation and application. The selenide polymer acceptor material is named PYSe2FT and is synthesized by Knoevenagel condensation reaction and Still cross-coupling reaction; the material PYSe2FT takes a selenium-substituted core donor unit as a main structure, and combines a difluoro-substituted thiophene π-electronic connection unit, where the selenium-substituted core donor unit and the difluoro-substituted thiophene π-electronic connection unit can effectively regulate and control the molecular energy level, so that molecules generate good accumulation, thus making PYSe-2FT an excellent polymer acceptor material.

Provided are an epoxy resin composition, which exhibits excellent low dielectric properties, and imparts excellent copper foil peel strength and interlayer cohesive strength when used in printed circuit plate applications; and a phenolic resin or an epoxy resin, which are for forming the epoxy resin composition. The phenolic resin is represented by General Formula (1) below.

##STR00001##

In the formula, R.sup.1's each represent a hydrocarbon group having 1 to 10 carbon atoms; R.sup.2's each represent a hydrogen atom, Formula (1a), or Formula (1b), where at least one of R.sup.2's is Formula (1a) or Formula (1b); and n represents the number of repetitions of 0 to 5.

The invention provides a material having a structure including three or more anthracene structures per molecule as a photosensitive unit. That structure allows the material to remain in a liquid state at room temperature due to its reduced crystallinity. After coated on an application member in a liquid state, it is irradiated with light from outside so that it can be cured by way of photocrosslinking, and when heated, it returns back to the original state as the linkage is cleaved. By use of this material it is possible to form a reversibly detachable layer that serves as an adhesive layer at an interface to an application member and a coating layer at the surface of the application member.