Provided is a resin composition that is highly fluid and has good moldability, and that has excellent optical properties. More specifically, provided is a resin composition that contains a thermoplastic resin and a specific compounding agent containing a naphthalene structure and/or a fluorene structure.

The present invention addresses the problem of providing a fluorine-containing aromatic polymer; a method for producing the fluorine-containing aromatic polymer; etc. The problem can be solved by: a polymer having a monomer unit represented by formula (1) (wherein R.sup.1 in each occurrence is independently a halogen atom, NR.sup.11R.sup.12 (wherein R.sup.11 and R.sup.12 are independently a hydrogen atom or an organic group), or an organic group; n1 is an integer of 0 to 4; two R.sup.1s that can be present in the ortho-positions may form a ring together with two carbon atoms on the adjacent benzene ring, wherein the formed ring may have an organic group as a substituent; and L.sup.1 is a single bond, an oxygen atom, a sulfur atom, -L.sup.11-O—, —O-L.sup.12-O—, -L.sup.13-S—, or —S-L.sup.14-S— (wherein L.sup.11 to L.sup.14 are each independently an alkylene group optionally having one or more substituents); etc.

Provided are: a resist underlayer film formation composition combining high etching resistance, high heat resistance, and excellent coating properties; a resist underlayer film in which the resist underlayer film formation composition is used and a method for manufacturing the resist underlayer film; a method for forming a resist pattern; and a method for manufacturing a semiconductor device. The resist underlayer film formation composition is characterized by including the compound represented by Formula (1), or a polymer derived from the compound represented by Formula (1) (where: AA represents a single bond or a double bond; X.sup.1 represents —N(R.sup.1)—; X.sup.2 represents —N(R.sup.2)—; X.sup.3 represents —CH(R.sup.3)—; X.sup.4 represents —CH(R.sup.4)— etc.; R.sup.1, R.sup.2, R.sup.3, and R.sup.4 represent hydrogen atoms, C1-20 straight chain, branched, or cyclic alkyl groups, etc.; R.sup.5, R.sup.6, R.sup.9, and R.sup.10 represent hydrogen atoms, hydroxy groups, alkyl groups, etc.; R.sup.7 and R.sup.8 represent benzene rings or naphthalene rings; and n and o are 0 or 1). A semiconductor device is manufactured by: coating the composition on a semiconductor substrate, firing the coated composition, and forming a resist underlayer film; forming a resist film thereon with an inorganic resist underlayer film interposed therebetween selectively as desired; forming a resist pattern by irradiating light or electron radiation and developing; etching the underlayer film using the resist pattern; and processing the semiconductor substrate using the patterned underlayer film.

Provided is a resin material for forming an underlayer film which is used to form a resist underlayer film used in a multi-layer resist process, the resin material including a cyclic olefin polymer (I), in which a temperature at an intersection between a storage modulus (G′) curve and a loss modulus (G″) curve in a solid viscoelasticity of the resin material for forming an underlayer film which is as measured under conditions of a measurement temperature range of 30° C. to 300° C., a heating rate of 3° C./min, and a frequency of 1 Hz in a nitrogen atmosphere in a shear mode using a rheometer is higher than or equal to 40° C. and lower than or equal to 200°.

Gas separation membranes are provided and more particularly, a series of addition-type and ROMP type polynorbornenes with substituents derived from Mizoroki-Heck reactions are provided and have particular utility as gas separation membranes for natural gas upgrading.

Described herein are anionic phenylene oligomers and polymers, and devices including these materials. The oligomers and polymers can be prepared in a convenient and well-controlled manner, and can be used in cation exchange membranes. Also described is the controlled synthesis of anionic phenylene monomers and their use in synthesizing anionic oligomers and polymers, with precise control of the position and number of anionic groups.

The present invention addresses the problem of providing a fluorine-containing aromatic polymer; a method for producing the fluorine-containing aromatic polymer; etc. The problem can be solved by: a polymer having a monomer unit represented by formula (1) (wherein R.sup.1 in each occurrence is independently a halogen atom, NR.sup.11R.sup.12 (wherein R.sup.11 and R.sup.12 are independently a hydrogen atom or an organic group), or an organic group; n1 is an integer of 0 to 4; two R.sup.1s that can be present in the ortho-positions may form a ring together with two carbon atoms on the adjacent benzene ring, wherein the formed ring may have an organic group as a substituent; and L.sup.1 is a single bond, an oxygen atom, a sulfur atom, -L.sup.11-O—, —O-L.sup.12-O—, -L.sup.13-S—, or —S-L.sup.14-S— (wherein L.sup.11 to L.sup.14 are each independently an alkylene group optionally having one or more substituents); etc.

A material for forming an underlayer film according to the present invention is a material for forming an underlayer film which is used to form a resist underlayer film used in a multi-layer resist process, the material including a cyclic olefin polymer which has a repeating structural unit [A] represented by Formula (1) and a repeating structural unit [B] represented by Formula (2), in which a molar ratio [A]/[B] of the structural unit [A] to the structural unit [B] in the cyclic olefin polymer is greater than or equal to 5/95 and less than or equal to 95/5.

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The present specification relates to a compound including an aromatic ring, a polymer electrolyte membrane including the same, a membrane-electrode assembly including the polymer electrolyte membrane, a fuel cell including the membrane-electrode assembly, and a redox flow battery including the polymer electrolyte membrane.

The present invention pertains to a resin formed article obtained by forming a resin composition that comprises a cycloolefin resin and a styrene-based thermoplastic elastomer, the styrene-based thermoplastic elastomer having a weight average molecular weight of 20,000 to 150,000, and having a difference in refractive index (ΔnD) of more than −0.002 to less than +0.002 with respect to the cycloolefin resin, the resin composition having a residual ratio of 0.10 wt % or less when analyzed based on the residue on ignition test method specified in the Japanese Pharmacopeia, the resin composition having a light transmittance (optical path length: 3 mm) of 55% or more with respect to light having a wavelength of 450 nm when the resin composition is formed in a shape of a sheet having a thickness of 3.0 mm, and subjected to light transmittance measurement, and the resin composition having a Charpy impact strength of 5 to 40 kJ/m.sup.2 when the resin composition is formed to have a thickness of 4.0 mm, a length of 80.0 mm, and a width of 10.0 mm, and subjected to the notched Charpy impact test specified in JIS K 7111-1 at 23° C.