A non-curable thermally conductive material contains: (a) a matrix material containing: (i) 90 to 98 wt % of a non-functional non-crosslinked organosiloxane fluid having a dynamic viscosity of 50 to 350 centiStokes; and (ii) 2 to less than 10 wt % of a crosslinked hydrosilylation reaction product of an alkenyl terminated polydiorganosiloxane having a degree of polymerization greater than 300 and an organohydrogensiloxane crosslinker with 2 or more SiH groups per molecule where the molar ratio of SiH groups to alkenyl groups is 0.5 to 2.0; (b) greater than 80 wt % to less than 95 wt % thermally conductive filler dispersed throughout the matrix material; and (c) treating agents selected from alkyltrialkoxy silanes where the alkyl contains one to 14 carbon atoms and monotrialkoxy terminated diorganopolysiloxanes having a degree of polymerization of 20 to 110 and the alkoxy groups each contain one to 12 carbon atoms dispersed in the matrix material.

An electrode including an electrode active material including lithium (Li) and a polymer layer coating at least a portion of the electrode active material is provided. The polymer layer includes a polymerization product of a monomer having Formula I: ##STR00001##
where R.sub.1 and R.sub.2 are independently an aryl or a branched or unbranched C.sub.1-C.sub.10 alkyl and X.sub.1 and X.sub.2 are independently chlorine (Cl), bromine (Br), or iodine (I).

An electrode including an electrode active material including lithium (Li) and a polymer layer coating at least a portion of the electrode active material is provided. The polymer layer includes a polymerization product of a monomer having Formula I: ##STR00001##
where R.sub.1 and R.sub.2 are independently an aryl or a branched or unbranched C.sub.1-C.sub.10 alkyl and X.sub.1 and X.sub.2 are independently chlorine (Cl), bromine (Br), or iodine (I).

The present invention provides new impact protection materials and the method of making the same. More specifically, the impact protection materials are polymer-based shear-thickening composite comprising a non-shear-thickening polymer matrix material and one or more shear-thickening materials. Preferably, the non-shear-thickening polymer matrix material is in an amount from approximately 5 weight percent to approximately 90 weight percent with the balance being one or more shear-thickening materials. The first type of the one or more shear-thickening materials is sol-gel based shear-thickening material in which small inorganic particles are connected in a gel network; the second type is polymer-based shear-thickening material in which polymer chains form network. Compared to the existing shear-thickening materials, the present shear-thickening materials have different molecular structure and formulation and possess properties of good impact protection and good stability.

A composition and method can be used in the preparation of various siloxanes. The composition and method employ a fluorinated triarylborane Lewis acid, a hydrocarbonoxy-functional organosilicon compound, and a silyl hydride. The fluorinated triarylborane Lewis acid catalyzes reaction of a hydrocarbonoxy moiety (from the organosilicon compound) and a silicon-bonded hydrogen atom (from the silyl hydride) to form a siloxane bond.

A composition and method can be used in the preparation of various siloxanes. The composition and method employ a fluorinated triarylborane Lewis acid, a hydrocarbonoxy-functional organosilicon compound, and a silyl hydride. The fluorinated triarylborane Lewis acid catalyzes reaction of a hydrocarbonoxy moiety (from the organosilicon compound) and a silicon-bonded hydrogen atom (from the silyl hydride) to form a siloxane bond.

A field-effect transistor including at least: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode, wherein the semiconductor layer contains a carbon nanotube, and the gate insulating layer contains a polymer having inorganic particles bound thereto. Provided is a field-effect transistor and a method for producing the field-effect transistor, wherein the field-effect transistor causes decreased leak current and furthermore enables a semiconductor solution to be uniformly applied.

A field-effect transistor including at least: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode, wherein the semiconductor layer contains a carbon nanotube, and the gate insulating layer contains a polymer having inorganic particles bound thereto. Provided is a field-effect transistor and a method for producing the field-effect transistor, wherein the field-effect transistor causes decreased leak current and furthermore enables a semiconductor solution to be uniformly applied.

The present application relates to a polymer and a use thereof. The present application may provide a functional polymer which expresses a low solubility to a polar solvent and a non-polar solvent and which is suitable for forming a film. If applied to the use of cosmetics such as mascara or to medical uses, the polymer in the present application may express a tolerance to diverse solvents such as sebum, sweat, tears and the like, and thus enables makeup to last, etc. Accordingly, the polymer may be applied to diverse uses and used in film forming agents, cosmetic compositions, or cosmetics, or the like.

The present application relates to silicone compounds, compositions, packaged products and displays comprising such silicone compounds, and processes for making and using such compositions, packaged products and displays comprising such compositions. Such compositions have improved deposition and retention properties that may impart improved benefit characteristics to a composition and/or situs yet which changes its hydrophilicity/charge when desired.