The present application relates to a cross-linkable composition. The present application can provide a cross-linkable composition without degradation of cross-linking efficiency while exhibiting conductivity by containing an ionic compound, and its use.

The present application relates to a cross-linkable composition. The present application can provide a cross-linkable composition without degradation of cross-linking efficiency while exhibiting conductivity by containing an ionic compound, and its use.

Multi-layer electrochromic structures, and processes for assembling such structures, incorporating a cross-linked ion conducting polymer layer that maintains high adhesive and cohesive strength in combination with high ionic conductivity for an extended period of time, the ion conducting polymer layer characterized by electrochemical stability at voltages between about 1.3 V and about 4.4 V relative to lithium, lithium ion conductivity of at least about 10.sup.−5 s/cm, and lap shear strength of at least 100 kPa, as measured at 1.27 mm/min in accordance with ASTM International standard D1002 or D3163.

Multi-layer electrochromic structures, and processes for assembling such structures, incorporating a cross-linked ion conducting polymer layer that maintains high adhesive and cohesive strength in combination with high ionic conductivity for an extended period of time, the ion conducting polymer layer characterized by electrochemical stability at voltages between about 1.3 V and about 4.4 V relative to lithium, lithium ion conductivity of at least about 10.sup.−5 s/cm, and lap shear strength of at least 100 kPa, as measured at 1.27 mm/min in accordance with ASTM International standard D1002 or D3163.

A method of forming a photoresist pattern and a semiconductor device on which a photoresist pattern manufactured according to the same is formed. The method includes forming a photoresist pattern on a substrate; coating an organic topcoat composition including an acrylic polymer including a structural unit containing a hydroxy group and a fluorine and an acidic compound on the photoresist pattern; drying and heating the substrate on which the organic topcoat composition is coated to coat it with a topcoat; and spraying a rinse solution including an ether-based compound on the substrate coated with the topcoat to remove the topcoat.

A method of forming a photoresist pattern and a semiconductor device on which a photoresist pattern manufactured according to the same is formed. The method includes forming a photoresist pattern on a substrate; coating an organic topcoat composition including an acrylic polymer including a structural unit containing a hydroxy group and a fluorine and an acidic compound on the photoresist pattern; drying and heating the substrate on which the organic topcoat composition is coated to coat it with a topcoat; and spraying a rinse solution including an ether-based compound on the substrate coated with the topcoat to remove the topcoat.

A salt capable of producing a resist pattern with excellent line edge roughness is represented by formula (I): ##STR00001##
wherein, R.sup.1 represents —(X.sup.1—O).sub.o—R.sup.5, and o represents an integer of 0 to 6, R.sup.5 represents a hydrocarbon group having 1 to 12 carbon atoms, X.sup.1 represents a divalent hydrocarbon group having 2 to 12 carbon atoms, R.sup.2 represents an alkyl group having 1 to 12 carbon atoms or the like, I represents an integer of 0 to 3, and when I is 2 or more, a plurality of R.sup.2 may be the same or different from each other, R.sup.3 and R.sup.4 each represent a hydrogen atom or the like, m and n each represent 1 or 2, X.sup.0 represents a single bond, —CH.sub.2—, —O— or —S—, and R.sup.6 and R.sup.7 each represent an alkyl group having 1 to 4 carbon atoms which has a fluorine atom or the like.

A salt capable of producing a resist pattern with excellent line edge roughness is represented by formula (I): ##STR00001##
wherein, R.sup.1 represents —(X.sup.1—O).sub.o—R.sup.5, and o represents an integer of 0 to 6, R.sup.5 represents a hydrocarbon group having 1 to 12 carbon atoms, X.sup.1 represents a divalent hydrocarbon group having 2 to 12 carbon atoms, R.sup.2 represents an alkyl group having 1 to 12 carbon atoms or the like, I represents an integer of 0 to 3, and when I is 2 or more, a plurality of R.sup.2 may be the same or different from each other, R.sup.3 and R.sup.4 each represent a hydrogen atom or the like, m and n each represent 1 or 2, X.sup.0 represents a single bond, —CH.sub.2—, —O— or —S—, and R.sup.6 and R.sup.7 each represent an alkyl group having 1 to 4 carbon atoms which has a fluorine atom or the like.

Disclosed are an organic ion conductive polymer gel elastomer including a polymer matrix; a plasticizing solvent impregnated into the polymer matrix to plasticize the polymer matrix so that the polymer matrix is in a gel state; and an ion conductive dopant ionized by the plasticizing solvent and dispersed in the polymer matrix, wherein the plasticizing solvent and the ion conductive dopant are non-hydrophilic, and a method of preparing the organic ion conductive polymer gel elastomer.

A polymer composition includes a conductive polymer and at least one stretchability and electrical conductivity (STEC) enhancer, wherein a content of the STEC enhancer in the composition is at least about 1 wt. % of the composition.