Patent classifications
C09D161/06
Polymer, organic layer composition and method of forming patterns
A polymer, an organic layer composition including the polymer, and a method of forming a pattern using the organic layer composition, the polymer including a reaction product of a first compound represented by Chemical Formula 1 and a second compound represented by Chemical Formula 2:
(CHO).sub.n1—Ar.sup.1—X—Ar.sup.2—(CHO).sub.n2 [Chemical Formula 1] wherein, in Chemical Formula 1, X is O, S, or NR, in which R is a hydrogen, or a substituted or unsubstituted C1 to C30 alkyl group, Ar.sup.1 and Ar.sup.2 are independently a substituted or unsubstituted C6 to C30 aromatic ring group, and n1 and n2 are independently an integer of 1 to 3;
Ar.sup.3—(OH).sub.m [Chemical Formula 2] wherein, in Chemical Formula 2, Ar.sup.3 is a substituted or unsubstituted C10 to C30 fused aromatic ring group in which at least two rings are fused, and m is an integer of 1 to 3.
Polymer, organic layer composition and method of forming patterns
A polymer, an organic layer composition including the polymer, and a method of forming a pattern using the organic layer composition, the polymer including a reaction product of a first compound represented by Chemical Formula 1 and a second compound represented by Chemical Formula 2:
(CHO).sub.n1—Ar.sup.1—X—Ar.sup.2—(CHO).sub.n2 [Chemical Formula 1] wherein, in Chemical Formula 1, X is O, S, or NR, in which R is a hydrogen, or a substituted or unsubstituted C1 to C30 alkyl group, Ar.sup.1 and Ar.sup.2 are independently a substituted or unsubstituted C6 to C30 aromatic ring group, and n1 and n2 are independently an integer of 1 to 3;
Ar.sup.3—(OH).sub.m [Chemical Formula 2] wherein, in Chemical Formula 2, Ar.sup.3 is a substituted or unsubstituted C10 to C30 fused aromatic ring group in which at least two rings are fused, and m is an integer of 1 to 3.
Fibers made from soluble polymers
A fiber can be made having a structure with an axial core and a coating layer. The fiber can have a polymer core and one or two layers surrounding the core. The fine fiber can be made from a polymer material and a resinous aldehyde composition such that the general structure of the fiber has a polymer core surrounded by at least a layer of the resinous aldehyde composition.
Fibers made from soluble polymers
A fiber can be made having a structure with an axial core and a coating layer. The fiber can have a polymer core and one or two layers surrounding the core. The fine fiber can be made from a polymer material and a resinous aldehyde composition such that the general structure of the fiber has a polymer core surrounded by at least a layer of the resinous aldehyde composition.
MATERIAL FOR FORMING FILLING FILM FOR INHIBITING SEMICONDUCTOR SUBSTRATE PATTERN COLLAPSE, AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE
A material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains: (A) a polymer having a structural unit shown by the following general formula (1); (B) a residual-solvent removal promoter containing a compound shown by the following general formula (2); and (C) an organic solvent. A ratio Mw/Mn of a weight-average molecular weight Mw and a number-average molecular weight Mn of the polymer (A) in terms of polystyrene by a gel permeation chromatography method is 2.50≤Mw/Mn≤9.00. The residual-solvent removal promoter (B) is contained in an amount of 0.1 to 40 parts by mass based on 100 parts by mass of the polymer (A). The material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains no acid generator.
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MATERIAL FOR FORMING FILLING FILM FOR INHIBITING SEMICONDUCTOR SUBSTRATE PATTERN COLLAPSE, AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE
A material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains: (A) a polymer having a structural unit shown by the following general formula (1); (B) a residual-solvent removal promoter containing a compound shown by the following general formula (2); and (C) an organic solvent. A ratio Mw/Mn of a weight-average molecular weight Mw and a number-average molecular weight Mn of the polymer (A) in terms of polystyrene by a gel permeation chromatography method is 2.50≤Mw/Mn≤9.00. The residual-solvent removal promoter (B) is contained in an amount of 0.1 to 40 parts by mass based on 100 parts by mass of the polymer (A). The material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains no acid generator.
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Hard mask-forming composition and method for manufacturing electronic component
A hard mask-forming composition which forms a hard mask used in lithography, including: a resin containing an aromatic ring and a polar group; and a compound containing at least one of an oxazine ring fused to an aromatic ring, and a fluorene ring.
Hard mask-forming composition and method for manufacturing electronic component
A hard mask-forming composition which forms a hard mask used in lithography, including: a resin containing an aromatic ring and a polar group; and a compound containing at least one of an oxazine ring fused to an aromatic ring, and a fluorene ring.
Powder coating pretreatment compositions, and methods of using and making the same
The present document describes a composition for the pretreatment of surfaces, which comprises plasticizers, degassers, pH adjusting agents, pigments, a phenol formaldehyde resin based adhesive, process of making the same and method of using the same.
Powder coating pretreatment compositions, and methods of using and making the same
The present document describes a composition for the pretreatment of surfaces, which comprises plasticizers, degassers, pH adjusting agents, pigments, a phenol formaldehyde resin based adhesive, process of making the same and method of using the same.