C09D161/06

Polymer, organic layer composition and method of forming patterns

A polymer, an organic layer composition including the polymer, and a method of forming a pattern using the organic layer composition, the polymer including a reaction product of a first compound represented by Chemical Formula 1 and a second compound represented by Chemical Formula 2:
(CHO).sub.n1—Ar.sup.1—X—Ar.sup.2—(CHO).sub.n2  [Chemical Formula 1] wherein, in Chemical Formula 1, X is O, S, or NR, in which R is a hydrogen, or a substituted or unsubstituted C1 to C30 alkyl group, Ar.sup.1 and Ar.sup.2 are independently a substituted or unsubstituted C6 to C30 aromatic ring group, and n1 and n2 are independently an integer of 1 to 3;
Ar.sup.3—(OH).sub.m  [Chemical Formula 2] wherein, in Chemical Formula 2, Ar.sup.3 is a substituted or unsubstituted C10 to C30 fused aromatic ring group in which at least two rings are fused, and m is an integer of 1 to 3.

Polymer, organic layer composition and method of forming patterns

A polymer, an organic layer composition including the polymer, and a method of forming a pattern using the organic layer composition, the polymer including a reaction product of a first compound represented by Chemical Formula 1 and a second compound represented by Chemical Formula 2:
(CHO).sub.n1—Ar.sup.1—X—Ar.sup.2—(CHO).sub.n2  [Chemical Formula 1] wherein, in Chemical Formula 1, X is O, S, or NR, in which R is a hydrogen, or a substituted or unsubstituted C1 to C30 alkyl group, Ar.sup.1 and Ar.sup.2 are independently a substituted or unsubstituted C6 to C30 aromatic ring group, and n1 and n2 are independently an integer of 1 to 3;
Ar.sup.3—(OH).sub.m  [Chemical Formula 2] wherein, in Chemical Formula 2, Ar.sup.3 is a substituted or unsubstituted C10 to C30 fused aromatic ring group in which at least two rings are fused, and m is an integer of 1 to 3.

Fibers made from soluble polymers

A fiber can be made having a structure with an axial core and a coating layer. The fiber can have a polymer core and one or two layers surrounding the core. The fine fiber can be made from a polymer material and a resinous aldehyde composition such that the general structure of the fiber has a polymer core surrounded by at least a layer of the resinous aldehyde composition.

Fibers made from soluble polymers

A fiber can be made having a structure with an axial core and a coating layer. The fiber can have a polymer core and one or two layers surrounding the core. The fine fiber can be made from a polymer material and a resinous aldehyde composition such that the general structure of the fiber has a polymer core surrounded by at least a layer of the resinous aldehyde composition.

MATERIAL FOR FORMING FILLING FILM FOR INHIBITING SEMICONDUCTOR SUBSTRATE PATTERN COLLAPSE, AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE

A material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains: (A) a polymer having a structural unit shown by the following general formula (1); (B) a residual-solvent removal promoter containing a compound shown by the following general formula (2); and (C) an organic solvent. A ratio Mw/Mn of a weight-average molecular weight Mw and a number-average molecular weight Mn of the polymer (A) in terms of polystyrene by a gel permeation chromatography method is 2.50≤Mw/Mn≤9.00. The residual-solvent removal promoter (B) is contained in an amount of 0.1 to 40 parts by mass based on 100 parts by mass of the polymer (A). The material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains no acid generator.

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MATERIAL FOR FORMING FILLING FILM FOR INHIBITING SEMICONDUCTOR SUBSTRATE PATTERN COLLAPSE, AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE

A material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains: (A) a polymer having a structural unit shown by the following general formula (1); (B) a residual-solvent removal promoter containing a compound shown by the following general formula (2); and (C) an organic solvent. A ratio Mw/Mn of a weight-average molecular weight Mw and a number-average molecular weight Mn of the polymer (A) in terms of polystyrene by a gel permeation chromatography method is 2.50≤Mw/Mn≤9.00. The residual-solvent removal promoter (B) is contained in an amount of 0.1 to 40 parts by mass based on 100 parts by mass of the polymer (A). The material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains no acid generator.

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Hard mask-forming composition and method for manufacturing electronic component

A hard mask-forming composition which forms a hard mask used in lithography, including: a resin containing an aromatic ring and a polar group; and a compound containing at least one of an oxazine ring fused to an aromatic ring, and a fluorene ring.

Hard mask-forming composition and method for manufacturing electronic component

A hard mask-forming composition which forms a hard mask used in lithography, including: a resin containing an aromatic ring and a polar group; and a compound containing at least one of an oxazine ring fused to an aromatic ring, and a fluorene ring.

Powder coating pretreatment compositions, and methods of using and making the same
09850410 · 2017-12-26 · ·

The present document describes a composition for the pretreatment of surfaces, which comprises plasticizers, degassers, pH adjusting agents, pigments, a phenol formaldehyde resin based adhesive, process of making the same and method of using the same.

Powder coating pretreatment compositions, and methods of using and making the same
09850410 · 2017-12-26 · ·

The present document describes a composition for the pretreatment of surfaces, which comprises plasticizers, degassers, pH adjusting agents, pigments, a phenol formaldehyde resin based adhesive, process of making the same and method of using the same.