A composition for forming resist underlayer film for nanoimprinting includes novolac resin that has a repeating unit structure represented by formula (1). In formula (1), group A represents organic group having an aromatic ring, a condensed aromatic ring, or a condensed aromatic heterocycle, group B represents organic group having an aromatic ring or a condensed aromatic ring, group E represents a single bond or a branched or straight-chain C1-10 alkylene group that may be substituted and may include an ether bond and/or a carbonyl group, group D represents organic group that has 1 to 15 carbon atoms and is represented by formula (2) (in which R.sup.1, R.sup.2, and R.sup.3 each independently represent a fluorine atom, or a straight-chain, branched-chain, or cyclic alkyl group, and any two of R.sup.1, R.sup.2, and R.sup.3 may be bonded to one another to form a ring), and n represents a number from 1 to 5.

A composition for forming resist underlayer film for nanoimprinting includes novolac resin that has a repeating unit structure represented by formula (1). In formula (1), group A represents organic group having an aromatic ring, a condensed aromatic ring, or a condensed aromatic heterocycle, group B represents organic group having an aromatic ring or a condensed aromatic ring, group E represents a single bond or a branched or straight-chain C1-10 alkylene group that may be substituted and may include an ether bond and/or a carbonyl group, group D represents organic group that has 1 to 15 carbon atoms and is represented by formula (2) (in which R.sup.1, R.sup.2, and R.sup.3 each independently represent a fluorine atom, or a straight-chain, branched-chain, or cyclic alkyl group, and any two of R.sup.1, R.sup.2, and R.sup.3 may be bonded to one another to form a ring), and n represents a number from 1 to 5.

A coating system comprising an epoxy coating layer prepared from an epoxy formulation which comprises an epoxy resin; a curing agent with no more than 4.5 wt % free amine based on a weight solids of the curing agent; and an adjacent layer prepared from a non-isocyanate polyurethane formulation wherein the epoxy formulation and/or non-isocyanate polyurethane formulation optionally further comprise one or more additives selected from the group consisting of solvent, reactive diluent, plasticizer, pigment, filler; rheology modifiers, dispersants, surfactants, UV stabilizers, and corrosion inhibitors is provided. Also provided are a method of applying a multi-layer coating system and an article comprising a coating system.

A resist underlayer film which has an excellent hard mask function and can form an excellent pattern shape. A resist underlayer film-forming composition to be used for a lithography process, including a novolac polymer obtained by reaction of an aldehyde compound and an aromatic compound having a secondary amino group. The novolac polymer contains a unit structure of Formula (1): ##STR00001##
A method for producing a semiconductor device, including the steps of: forming a resist underlayer film from the resist underlayer film-forming composition on a semiconductor substrate; forming a hard mask on the resist underlayer film; further forming a resist film on the hard mask; forming a resist pattern by irradiation with light or an electron beam and development; etching the hard mask by using the formed resist pattern; etching the resist underlayer film by using the patterned hard mask; and processing the semiconductor substrate by using the patterned underlayer film.

A resist underlayer film which has an excellent hard mask function and can form an excellent pattern shape. A resist underlayer film-forming composition to be used for a lithography process, including a novolac polymer obtained by reaction of an aldehyde compound and an aromatic compound having a secondary amino group. The novolac polymer contains a unit structure of Formula (1): ##STR00001##
A method for producing a semiconductor device, including the steps of: forming a resist underlayer film from the resist underlayer film-forming composition on a semiconductor substrate; forming a hard mask on the resist underlayer film; further forming a resist film on the hard mask; forming a resist pattern by irradiation with light or an electron beam and development; etching the hard mask by using the formed resist pattern; etching the resist underlayer film by using the patterned hard mask; and processing the semiconductor substrate by using the patterned underlayer film.

A method for manufacturing a semiconductor substrate having a patterned group-III nitride compound layer without collapsing a formed mask pattern due to reflow or decomposition even when an etching method at a high temperature of 300° C.-700° C. is used, including the steps: forming a patterned mask layer on the substrate's group-III nitride compound layer, and etching the group-III nitride compound layer by dry etching at 300° C. or higher and 700° C. or lower using the mask pattern, to form patterned group-III nitride compound layer, wherein the patterned mask layer contains a polymer containing a unit structure of the following Formula (1): ##STR00001##
a polymer containing a unit structure of the following Formula (2):
O—Ar.sub.1  Formula (2)
a polymer containing a structural unit of the following Formula (3):
O—Ar.sub.2—O—Ar.sub.3-T-Ar.sub.4  Formula (3)
a polymer containing a combination of unit structure of Formula (2) and unit structure of Formula (3), or a crosslinked structure of the polymers.

A material to form a resist underlayer film having properties achieving heat resistance, flattening properties, and etching resistance through lithography. A resist underlayer film forming composition including a polymer having a unit structure of Formula (1): ##STR00001##
(wherein R.sup.1 is an organic group having at least two amines and at least three C.sub.6-40 aromatic rings, R.sup.2 and R.sup.3 are each a hydrogen atom, a C.sub.1-10 alkyl group, a C.sub.6-40 aryl group, a heterocyclic group, or a combination thereof, and the alkyl group, the aryl group, and the heterocyclic group are optionally substituted with a halogen group, a nitro group, an amino group, a formyl group, an alkoxy group, or a hydroxy group, or R.sup.2 and R.sup.3 optionally form a ring together). The above mentioned composition t, wherein R.sup.1 is a divalent organic group derived from N,N′-diphenyl-1,4-phenylenediamine.

A material to form a resist underlayer film having properties achieving heat resistance, flattening properties, and etching resistance through lithography. A resist underlayer film forming composition including a polymer having a unit structure of Formula (1): ##STR00001##
(wherein R.sup.1 is an organic group having at least two amines and at least three C.sub.6-40 aromatic rings, R.sup.2 and R.sup.3 are each a hydrogen atom, a C.sub.1-10 alkyl group, a C.sub.6-40 aryl group, a heterocyclic group, or a combination thereof, and the alkyl group, the aryl group, and the heterocyclic group are optionally substituted with a halogen group, a nitro group, an amino group, a formyl group, an alkoxy group, or a hydroxy group, or R.sup.2 and R.sup.3 optionally form a ring together). The above mentioned composition t, wherein R.sup.1 is a divalent organic group derived from N,N′-diphenyl-1,4-phenylenediamine.

Polyhemiaminal (PHA) and polyhexahydrotriazine (PHT) materials are modified by 1,4 conjugate addition chemical reactions to produce a variety of molecular architectures comprising pendant groups and bridging segments. The materials are formed by a method that includes heating a mixture comprising solvent(s), paraformaldehyde, aromatic amine groups, aliphatic amine Michael donors, and Michael acceptors, such as acrylates. The reaction mixtures may be used to prepare polymer pre-impregnated materials and composites containing PHT matrix resin.

Polyhemiaminal (PHA) and polyhexahydrotriazine (PHT) materials are modified by 1,4 conjugate addition chemical reactions to produce a variety of molecular architectures comprising pendant groups and bridging segments. The materials are formed by a method that includes heating a mixture comprising solvent(s), paraformaldehyde, aromatic amine groups, aliphatic amine Michael donors, and Michael acceptors, such as acrylates. The reaction mixtures may be used to prepare polymer pre-impregnated materials and composites containing PHT matrix resin.