The invention relates to a composition for forming an adhesive layer, an adhesive layer, a manufacturing method for the adhesive layer, a composite material, a sheet, a heat dissipation member, an electronic device, a battery, a capacitor, an automobile component and a machine mechanism component, and the composition for forming the adhesive layer contains a polyvinyl acetal resin and a compound having an oxazoline group.

The invention relates to a composition for forming an adhesive layer, an adhesive layer, a manufacturing method for the adhesive layer, a composite material, a sheet, a heat dissipation member, an electronic device, a battery, a capacitor, an automobile component and a machine mechanism component, and the composition for forming the adhesive layer contains a polyvinyl acetal resin and a compound having an oxazoline group.

The invention relates to a composition for forming an adhesive layer, an adhesive layer, a manufacturing method for the adhesive layer, a composite material, a sheet, a heat dissipation member, an electronic device, a battery, a capacitor, an automobile component and a machine mechanism component, and the composition for forming the adhesive layer contains a polyvinyl acetal resin and a compound having an oxazoline group.

Provided are a multilayer film, a method for producing the multilayer film, and a method for producing a molded body. The multilayer film has excellent three-dimensional overlaying formability and adhesiveness after being formed; can easily be used when being bonded to an adherend; maintains adhesive strength. Specifically, the multilayer film has: an adhesive layer comprising a thermoplastic polymer composition containing a thermoplastic elastomer (A) which is a block copolymer or a hydrogenated product thereof having a polymer block (a1) containing aromatic vinyl compound units and having a polymer block (a2) containing conjugated diene compound units; and a base layer comprising an amorphous resin which has a modulus of elasticity of 2 to 600 MPa at an arbitrary temperature of 110 to 160° C. The tensile elongation at break of the multilayer film at a temperature 5° C. lower than the glass transition temperature of the amorphous resin is at least 160%.

Provided is a technique suitable for multilayering thin semiconductor elements via adhesive bonding while avoiding wafer damage in a method of manufacturing a semiconductor device, the method in which semiconductor elements are multilayered through laminating wafers in which the semiconductor elements are fabricated. The method of the present invention includes bonding and removing. In the bonding step, a back surface 1b side of a thinned wafer 1T in a reinforced wafer 1R having a laminated structure including a supporting substrate S, a temporary adhesive layer 2, and the thinned wafer 1T is bonded via an adhesive to an element forming surface 3a of a wafer 3. A temporary adhesive for forming the temporary adhesive layer 2 contains a polyvalent vinyl ether compound, a compound having two or more hydroxy groups or carboxy groups and thus capable of forming a polymer with the polyvalent vinyl ether compound, and a thermoplastic resin. The adhesive contains a polymerizable group-containing polyorganosilsesquioxane. In the removing step, a temporary adhesion by the temporary adhesive layer 2 between the supporting substrate S and the thinned wafer 1T is released to remove the supporting substrate S.

Provided is a technique suitable for multilayering thin semiconductor elements via adhesive bonding while avoiding wafer damage in a method of manufacturing a semiconductor device, the method in which semiconductor elements are multilayered through laminating wafers in which the semiconductor elements are fabricated. The method of the present invention includes bonding and removing. In the bonding step, a back surface 1b side of a thinned wafer 1T in a reinforced wafer 1R having a laminated structure including a supporting substrate S, a temporary adhesive layer 2, and the thinned wafer 1T is bonded via an adhesive to an element forming surface 3a of a wafer 3. A temporary adhesive for forming the temporary adhesive layer 2 contains a polyvalent vinyl ether compound, a compound having two or more hydroxy groups or carboxy groups and thus capable of forming a polymer with the polyvalent vinyl ether compound, and a thermoplastic resin. The adhesive contains a polymerizable group-containing polyorganosilsesquioxane. In the removing step, a temporary adhesion by the temporary adhesive layer 2 between the supporting substrate S and the thinned wafer 1T is released to remove the supporting substrate S.

A dielectric welding film capable of achieving a tight welding through a short period of dielectric heating, and a welding method using the dielectric welding film are provided. The dielectric welding film is configured to weld a pair of adherends of the same material or different materials through dielectric heating, the dielectric welding film including a thermoplastic resin as an A component and a dielectric filler as a B component and satisfying the conditions (i) and (ii): (i) a melting point or softening point measured in accordance with JIS K 7121 (1987) is in a range from 80 to 200 degrees C.; and (ii) heat of fusion measured in accordance with JIS K 7121 (1987) is in a range from 1 to 80 J/g.

A dielectric welding film capable of achieving a tight welding through a short period of dielectric heating, and a welding method using the dielectric welding film are provided. The dielectric welding film is configured to weld a pair of adherends of the same material or different materials through dielectric heating, the dielectric welding film including a thermoplastic resin as an A component and a dielectric filler as a B component and satisfying the conditions (i) and (ii): (i) a melting point or softening point measured in accordance with JIS K 7121 (1987) is in a range from 80 to 200 degrees C.; and (ii) heat of fusion measured in accordance with JIS K 7121 (1987) is in a range from 1 to 80 J/g.

The interlayer film for laminated glass according to the present invention includes at least one graphene-based material selected from the group consisting of graphene and graphite.

The interlayer film for laminated glass according to the present invention includes at least one graphene-based material selected from the group consisting of graphene and graphite.