The present application relates to a method for manufacturing an indicator for food that can visually check the quality change in food in a package state, an indicator for food manufactured therefrom, and a method for checking the storage status of food using the same. The manufacturing method of an indicator for food of the present application includes bonding a first film, on which an indicator layer including a pH-sensitive indicator is formed on one surface thereof, and a second film, on which an adhesive layer is formed on one surface thereof, so that the indicator layer of the first film and the adhesive layer of the second film can face each other.

Disclosed herein are a heat-shrinkable polyester label film and a preparation method thereof. The label film has a shrinkage force not lower than 5.5 N in at least one shrinkage direction after immersing the heat-shrinkable polyester label film in water at 55° C. for 30 seconds, and a heat shrinkage rate of not lower than 50% in the shrinkage direction after immersing the heat-shrinkable polyester label film in water at 55° C. for 240 seconds.

An optical adhesive including a viscoelastic or elastomeric adhesive layer and a cured polymer layer immediately adjacent the viscoelastic or elastomeric adhesive layer is described. The viscoelastic or elastomeric adhesive layer a refractive index less than 1.570 and the cured polymer layer has a refractive index of at least 1.570. An interface between the viscoelastic or elastomeric adhesive layer and the cured polymer layer is structured. The cured polymer layer has a storage modulus of at least 2000 MPa at 20° C. and a glass transition temperature of no more than 65° C.

An electrically conductive bonding tape includes a conductive self-supporting first layer conductive in each of three mutually orthogonal directions and including conductive opposing first and second major surfaces, an conductive second layer coated on the first major surface of the self-supporting first layer and having at least 60% by weight of nickel, the second layer having an exposed major surface facing away from the first major surface of the self-supporting first layer and exposing at least some of the nickel in the second layer, and a conductive adhesive third layer bonded to the second major surface of the self-supporting first layer opposite the second layer. The adhesive third layer is conductive in at least one of the three mutually orthogonal directions and includes a plurality of conductive elements dispersed in an insulative material, at least some of the conductive elements physically contacting the self-supporting first layer.

A PSA film includes a base material and a PSA layer on at least one side of the base material. The PSA layer has a temperature region, within the range of 70° C. to 100° C., in which its loss tangent tanδ is 0.8 or greater. The PSA film can be peeled off through irradiation with active energy radiation.

An object of the present invention is to provide a heat-resistant film that is suitable for protection of a surface provided with electrical conduction, decoration or the like in a plastic product, a glass product, a ceramic product, and the like, or that is suitable for holding a semiconductor, dies, and the like in producing dies through dicing and singulation. The film that solves the above object is a heat-resistant film comprising a thermoplastic resin, wherein (a) the thermoplastic resin is a polyester-based elastomer comprising a hard segment and a soft segment that are linked to each other, (b) the hard segment comprises a polyester unit constituted from an aromatic dicarboxylic acid and an aliphatic diol or an alicyclic diol, (c) the soft segment is constituted mainly from the prescribed polycarbonate, (d) a weight ratio of the hard segment contained in the polyester-based elastomer exceeds 50%, and (e) the film comprising the thermoplastic resin has an elastic modulus of 30 to 500 MPa, an elongation at break of 200 to 700%, and a ratio F50/F25 of 1.05 or more, the ratio F50/F25 being a ratio of a stress F50 at an elongation of 50% to a stress F25 at an elongation of 25%.

An adhesive sheet comprising a base material, a primer layer, and an adhesive layer cured by radiation, arranged in this order. The primer layer comprises a (meth)acrylic polymer having a nitrogen-containing group and a polymer having a polyoxyalkylene group.

An adhesive composition includes a resin, a crosslinking agent, and a light absorber. The light absorber includes at least one selected from the group consisting of a benzophenone-based compound, a cyanoacrylate-based compound having a ring structure, a benzotriazole-based compound, and a sterically hindered amine compound having a ring structure.

A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of applying an ultrasonic wave to the polyester sheet, pushing up each device chip through the polyester sheet, and picking up each device chip from the polyester sheet.

Provided is a film for manufacturing a semiconductor part in which an evaluation step accompanied with a temperature change, a segmenting step, and a pickup step can be commonly performed, a method for manufacturing a semiconductor part, a semiconductor part, and an evaluation method. The film includes a base layer, and an adhesive layer disposed on one surface side of the base layer, wherein the ratio RE (=E′(160)/E′(−40)) of the elastic modulus of the base layer at 160° C. to the elastic modulus of the base layer at −40° C. is RE≥0.01, and the elastic modulus E′(−40) is 10 MPa to less than 1000 MPa. The method includes bonding the adhesive layer to a back surface of a semiconductor wafer, separating the semiconductor wafer into segments to obtain semiconductor parts, and separating the semiconductor parts from the adhesive layer, and includes a step of evaluating.