A quantum dot, and an ink composition, a light-emitting device, an optical member, and an apparatus, each including the quantum dot. The quantum dot includes: a nanoparticle; and at least one ligand on a surface of the nanoparticle, wherein the nanoparticle does not include mercury and cadmium, and the at least one ligand includes at least two thiol groups and at least one hydrophilic group.

Embodiments of the present disclosure provide for methods of making quantum dots (QDs) (passivated or unpassivated) using a continuous flow process, systems for making QDs using a continuous flow process, and the like. In one or more embodiments, the QDs produced using embodiments of the present disclosure can be used in solar photovoltaic cells, bio-imaging, IR emitters, or LEDs.

A light emitting element according to an embodiment includes a first electrode, a second electrode overlapping the first electrode, an emission layer disposed between the first electrode and the second electrode, and an electron transport region disposed between the emission layer and the second electrode, wherein the electron transport region includes a thermal acid generator (TAG). A method of manufacturing a light emitting element is also provided.

There is provided a photodetector element including a first electrode layer; a second electrode layer; a photoelectric conversion layer provided between the first electrode layer and the second electrode layer; an electron transport layer provided between the first electrode layer and the photoelectric conversion layer; and a hole transport layer provided between the photoelectric conversion layer and the second electrode layer, in which the photoelectric conversion layer contains an aggregate of semiconductor quantum dots that contain a metal atom and contains a ligand coordinated to the semiconductor quantum dot, the hole transport layer contains an organic semiconductor, and the second electrode layer is formed of a metal material containing at least one metal atom selected from Au, Pt, Ir, Pd, Cu, Pb, Sn, Zn, Ti, W, Mo, Ta, Ge, Ni, Cr, or In. There is also provided an image sensor including the photodetector element.

There is provided a semiconductor film that includes an aggregate of semiconductor quantum dots that contain a Pb atom, and a ligand that is coordinated to the semiconductor quantum dot, in which a ratio of the number of Pb atoms having a valence of 1 or less to the number of Pb atoms having a valence of 2 is 0.20 or less. There are also provided a photodetector element, an image sensor, and a manufacturing method for a semiconductor film.

A polymer, a quantum dot composition, and a light-emitting device employing the same are provided. The polymer includes a first repeat unit that has a structure represented by Formula (I):

##STR00001##

wherein the definitions of R.sup.1, R.sup.2, A.sup.1, A.sup.2, A.sup.3, and Z.sup.1 and n are as defined in the specification.

An optical element includes a photoelectric conversion film and an inorganic substance-containing film containing at least one selected from the group consisting of a metal nitride and a metal oxynitride, in which the photoelectric conversion film contains a quantum dot or at least one compound semiconductor selected from the group consisting of a III-V group compound semiconductor, a II-VI group compound semiconductor, and a IV-IV group compound semiconductor, and the optical density of an inorganic substance-containing film is 0.5 or more per 1.0 μm of a film thickness at a wavelength of 1,550 nm.

Provided are a quantum dot-ligand composite which includes quantum dots including a semiconductor nanocrystalline core that includes Group III and V elements and a semiconductor nanocrystalline shell that is disposed on the semiconductor nanocrystalline core and includes Group II and VI elements; and organic ligands coordinated to the quantum dots. Additionally, a quantum dot-ligand composite with high luminescence properties and stability according to the electrostatic effective binding ratio between the quantum dots and the organic ligands bound to the surface of the quantum dots, and a photosensitive resin composition, optical film, electroluminescent diode, and electronic device including the same can be provided.

Provided herein are methods of making a high-quality quantum dot (QD), including by providing anion precursor chemistry that enables chemical modulation of precursor reactivity, thereby, allowing independent optimization of reaction temperature and precursor reactivity to systematically grow high quality QDs and by providing specially configured tunable precursors and related chemistry to facilitate separate reaction pathways for nucleation and growth, thereby accessing heat-up based synthesis of high-quality QD, including core-shell QDs. The methods may include providing a base-QD and a first anion or cation precursor having a composition comprising an anion or a cation element, respectively, and a modification agent. At least one add-layer is grown on the base-QD at a growth temperature, thereby making the high-quality QD comprising the base-QD and the at least one add-layer. At least one add-layer may have a composition comprising an add-layer cation element and an add-layer anion element.

A luminophore may have the general formula A.sub.2EZ.sub.zX.sub.x:RE,

where: A is selected from the group of the monovalent elements; E is selected from the group of the tetravalent, pentavalent, or hexavalent elements; Z is selected from the group of the divalent elements; X is selected from the group of the monovalent elements; RE is selected from activator elements; 2+e=2z+x, with the charge number e of the element E; and x+z=5 and z>0.

A process is also disclosed that is directed to producing the luminophore and a corresponding radiation-emitting component.