Patent classifications
C09K11/7414
Article of manufacture using an industrial or commercial manufacturing process, wherein the article of manufacture comprises an infrared (IR) phosphorescent material
This invention is a commercially manufactured article of manufacture (such as a shoulder patch) comprising an infrared (IR) phosphorescent material that emits in the IR wavelength range (e.g., from approximately seven-hundred nanometers (˜700 nm) to approximately one millimeter (˜1 mm)) after being excited by incident wavelengths of between ˜100 nm and ˜750 nm (or visible light). In other words, once the material has been exposed to visible light, the material will continue to emit in the IR wavelength range for a period of time, even when the material is no longer exposed to the visible light.
QUANTUM DOT-LIGAND COMPOSITE, PHOTOSENSITIVE RESIN COMPOSITION, OPTICAL FILM, ELECTROLUMINESCENT DIODE, AND ELECTRONIC DEVICE
Provided are a quantum dot-ligand composite which includes quantum dots including a semiconductor nanocrystalline core that includes Group III and V elements and a semiconductor nanocrystalline shell that is disposed on the semiconductor nanocrystalline core and includes Group II and VI elements; and organic ligands coordinated to the quantum dots. Additionally, a quantum dot-ligand composite with high luminescence properties and stability according to the electrostatic effective binding ratio between the quantum dots and the organic ligands bound to the surface of the quantum dots, and a photosensitive resin composition, optical film, electroluminescent diode, and electronic device including the same can be provided.
Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same
The present invention provides new compositions containing nearly monodisperse colloidal core/shell semiconductor nanocrystals with high photoluminescence quantum yields (PL QY), as well as other complex structured semiconductor nanocrystals. This invention also provides new synthetic methods for preparing these nanocrystals, and new devices comprising these compositions. In addition to core/shell semiconductor nanocrystals, this patent application also provides complex semiconductor nanostructures, quantum shells, quantum wells, doped nanocrystals, and other multiple-shelled semiconductor nanocrystals.
Quantum dots and device including the same
A cadmium free quantum dot or a population thereof or a device including the same, wherein the cadmium free quantum dot includes a core (or a semiconductor nanocrystal particle) including a first semiconductor including a Group IIB-VI compound and a shell (or a coating) disposed on the core (or the semiconductor nanocrystal particle) including a Group IIB-V compound and exhibits a quantum efficiency of about 60% or higher.
QUANTUM DOTS AND DEVICE INCLUDING THE SAME
A cadmium free quantum dot or a population thereof or a device including the same, wherein the cadmium free quantum dot includes a core (or a semiconductor nanocrystal particle) including a first semiconductor including a Group IIB-VI compound and a shell (or a coating) disposed on the core (or the semiconductor nanocrystal particle) including a Group IIB-V compound and exhibits a quantum efficiency of about 60% or higher.
QUANTUM DOTS AND DEVICE INCLUDING THE SAME
A cadmium free quantum dot or a population thereof or a device including the same, wherein the cadmium free quantum dot includes a core (or a semiconductor nanocrystal particle) including a first semiconductor including a Group IIB-VI compound and a shell (or a coating) disposed on the core (or the semiconductor nanocrystal particle) including a Group IIB-V compound and exhibits a quantum efficiency of about 60% or higher.
ARTICLE OF MANUFACTURE USING AN INDUSTRIAL OR COMMERCIAL MANUFACTURING PROCESS, WHEREIN THE ARTICLE OF MANUFACTURE COMPRISES AN INFRARED (IR) PHOSPHORESCENT MATERIAL
This invention is a commercially manufactured article of manufacture (such as a shoulder patch) comprising an infrared (IR) phosphorescent material that emits in the IR wavelength range (e.g., from approximately seven-hundred nanometers (700 nm) to approximately one millimeter (1 mm)) after being excited by incident wavelengths of between 100 nm and 750 nm (or visible light). In other words, once the material has been exposed to visible light, the material will continue to emit in the IR wavelength range for a period of time, even when the material is no longer exposed to the visible light.
DEVICES INCLUDING GREEN-EMITTING PHOSPHORS
A device including an LED light source optically coupled to a phosphor material including a green-emitting phosphor selected from the group consisting of compositions of (A1)-(A70), and combinations thereof.
Zinc sulphide phosphor having photo- and electroluminescent properties, process for producing same, and security document, security feature and method for detecting same
The present invention relates to a zinc sulphide phosphor and to a process for producing same. The invention further relates to a security document or document of value, to a security feature and to a method for detecting same. The phosphor according to the invention can act as electroluminescent phosphor and thus be excited by an electrical field, and this can result in emission of electroluminescent light in the blue and/or green color region of the visible spectrum. The phosphor can moreover be excited by UV radiation in the wavelength range than 345 nm to 370 nm, and can thus emit photoluminescent light in the blue color region of the visible spectrum. The phosphor can moreover be excited by UV radiation in the wavelength range from 310 nm in 335 nm, and can thus emit photoluminescent light in the green color region of the visible spectrum.
Quantum dots and device including the same
A cadmium free quantum dot or a population thereof or a device including the same, wherein the cadmium free quantum dot includes a core (or a semiconductor nanocrystal particle) including a first semiconductor including a Group IIB-VI compound and a shell (or a coating) disposed on the core (or the semiconductor nanocrystal particle) including a Group IIB-V compound and exhibits a quantum efficiency of about 60% or higher.