A phosphor having a favorable emission peak wavelength, narrow full width at half maximum, and/or high emission intensity is provided. Additionally, a light-emitting device, an illumination device, an image display device, and/or an indicator lamp for a vehicle having favorable color rendering, color reproducibility and/or favorable conversion efficiency are provided. The present invention relates to a phosphor including a crystal phase having a composition represented by a specific formula, and when, in a powder X-ray diffraction spectrum of the phosphor, the intensity of a peak that appears in a region where 2θ=38-39° is designated as Ix and the intensity of a peak that appears in a region where 2θ=37-38° is designated as Iy, the relative intensity Ix/Iy of Ix to Iy is 0.140 or less, and a light-emitting device comprising the phosphor.

A phosphor is specified. The phosphor has the general molecular formula:
(MA).sub.a(MB).sub.b(MC).sub.c(MD).sub.d(TA).sub.e(TB).sub.f(TC).sub.g(TD).sub.h(TE).sub.i(TF).sub.j(XA).sub.k(XB).sub.l(XC).sub.m(XD).sub.n:E.
In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, -E=Eu, Ce, Yb and/or Mn, XC=N and XD=C. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j−k−2l−3m−4n=w; 0.8≤t≤1; 3.5≤u≤4; 3.5≤v≤4; (−0.2)≤w≤0.2 and 0≤m<0.875 v and/or v≥1>0.125 v.

A nitride phosphor having a composition containing Eu, Si, Al, N, and a group 2 element including at least one selected from the group consisting of Mg, Ca, Sr, and Ba. In the composition, a ratio of a total molar content of the group 2 element and Eu to a molar content of Al is 0.8 or more and 1.1 or less, a molar ratio of Eu is 0.002 or more and 0.08 or less, a molar ratio of Si is 0.8 or more and 1.2 or less, and a total molar ratio of Si and Al is 1.8 or more and 2.2 or less. The nitride phosphor has a first peak in a range of 17° 2θ or more and 19° 2θ or less and a second peak in a range of 34° 2θ or more and 35.5° 2θ or less in a CuKα powder X-ray diffraction pattern.

The invention relates to a phosphor with garnet structure and a light-emitting device comprising the phosphor, wherein the phosphor includes the following components in percentage by weight: 38.47-45.19% of Y element, 9.49-22.09% of Al element, 2.06-24.31% of Ga element, 27.3-32.04% of O element, 0.43-1.46% of Ce element. In the phosphor particles, the shortest distance from the surface of one side of the particle to the surface of the opposite side through the centroid of the particle is defined as R, the longest distance is R1, and 5 μm≤R≤40 μm; any distance from the particle surface to the centroid is r, and 0<r<½R; and the space with the distance from the particle surface to the centroid direction being less than or equal to r is defined as r.sub.inner.

A nitride phosphor having a composition containing Eu, Si, Al, N, and a group 2 element including at least one selected from the group consisting of Mg, Ca, Sr, and Ba. In the composition, a ratio of a total molar content of the group 2 element and Eu to a molar content of Al is 0.8 or more and 1.1 or less, a molar ratio of Eu is 0.002 or more and 0.08 or less, a molar ratio of Si is 0.8 or more and 1.2 or less, and a total molar ratio of Si and Al is 1.8 or more and 2.2 or less. The nitride phosphor has a first peak in a range of 17° 2θ or more and 19° 2θ or less and a second peak in a range of 34° 2θ or more and 35.5° 2θ or less in a CuKα powder X-ray diffraction pattern.

Disclosed are a production method for a nitride fluorescent material, a nitride fluorescent material and a light emitting device. The production method is for producing a nitride fluorescent material that has, as a fluorescent material core, a calcined body having a composition containing at least one element M.sup.a selected from the group consisting of Sr, Ca, Ba and Mg, at least one element M.sup.b selected from the group consisting of Li, Na and K, at least one element M.sup.c selected from the group consisting of Eu, Ce, Tb and Mn, and Al, and optionally Si, and N, and the method includes preparing a calcined body having the above-mentioned composition, bringing the calcined body into contact with a fluorine-containing substance, and subjecting it to a first heat treatment at a temperature of 100° C. or higher and 500° C. or lower to form a fluoride-containing first film on the calcined body, and forming on the calcined body, a second film that contains a metal oxide containing at least one metal element M2 selected from the group consisting of Si, Al, Ti, Zr, Sn and Zn and subjecting it to a second heat treatment at a temperature in a range of higher than 250° C. and 500° C. or lower.

A phosphor in which at least some of an element M in a phosphor host crystal represented by M.sub.α(L,A).sub.βX.sub.γ is substituted with Eu as an activation material. M represents one or more (including at least Sr) of Mg, Ca, Sr, Ba, and Zn, L represents one or more of Li, Na, and K, A represents one or more of Al, Ga, B, In, Sc, Y, La, and Si, X represents one or more (except that X represents only N) of O, N, F, and Cl, α, β, γ, and δ satisfy 8.70≤α+β+γ+δ≤9.30, 0.00<α≤1.30, 3.70≤β≤4.30, 3.70≤γ≤4.30, and 0.00<δ≤1.30. In a fluorescence spectrum obtained by irradiation with light having a wavelength of 260 nm, when a fluorescence intensity at a wavelength of 569 nm is represented by I.sub.0 and a fluorescence intensity at a wavelength of 617 nm is represented by I.sub.1, I.sub.1/I.sub.0 is 0.01 or more and 0.4 or less.

A radiation-emitting optoelectronic component may include a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum. The optoelectronic component may further include a conversion element comprising a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the green region of the electromagnetic spectrum between 475 nm and 500 nm inclusive. The first phosphor may be or include BaSi.sub.4Al.sub.3N.sub.9, SrSiAl.sub.2O.sub.3N.sub.2, BaSi.sub.2N.sub.2O.sub.2, ALi.sub.3XO.sub.4, M*.sub.(1−x*−y*−z*) Z*.sub.z*[A*.sub.a*B*.sub.b*C*.sub.c*D*.sub.d*E*.sub.e*N.sub.4-n*O.sub.n*], and combinations thereof.

Provided herein are phosphors of the general molecular formula:

A.sub.3-2xEu.sub.xMP.sub.3O.sub.9N,

wherein the variables are as defined herein. Methods of producing the phosphors are also provided. In some aspects, the present disclosure provides light-emitting devices comprising these phosphors.

A phosphor having a favorable emission peak wavelength, narrow full width at half maximum, and/or high emission intensity is provided. Additionally, a light-emitting device, an illumination device, an image display device, and/or an indicator lamp for a vehicle having favorable color rendering, color reproducibility and/or favorable conversion efficiency are provided. The present invention relates to a phosphor including a crystal phase having a composition represented by a specific formula, and when, in a powder X-ray diffraction spectrum of the phosphor, the intensity of a peak that appears in a region where 2θ=38-39° is designated as Ix and the intensity of a peak that appears in a region where 2θ=37-38° is designated as Iy, the relative intensity Ix/Iy of Ix to Iy is 0.140 or less, and a light-emitting device comprising the phosphor.