A processing method for a color film substrate, the color film substrate comprising a substrate, a photoresist layer, a conductive layer and a spacer layer. The photoresist layer is disposed on the substrate; the conductive layer is disposed on the photoresist layer and completely covers the photoresist layer; and the spacer layer is disposed on the conductive layer. The method comprises: detecting the spacer layer; determining whether the spacer layer meets a preset condition; if the spacer layer meets the preset condition, removing the spacer layer using a rework liquid medicine so as to expose the conductive layer; and re-preparing a spacer layer on the exposed conductive layer, wherein the etching selection ratio of the spacer layer to the conductive layer is greater than 1.

Provided is a surface protectant that suppresses corrosion of a semiconductor wafer surface by a basic compound, and reduces defects in the semiconductor wafer. The semiconductor wafer surface protectant of the present invention includes a compound represented by Formula (1) below;
R.sup.1O—(C.sub.3H.sub.6O.sub.2).sub.n—H  (1) where R.sup.1 denotes a hydrogen atom, a hydrocarbon group that has from 1 to 24 carbon atoms and may have a hydroxyl group, or a group represented by R.sup.2CO, where the R.sup.2 denotes a hydrocarbon group having from 1 to 24 carbon atoms; and n indicates an average degree of polymerization of a glycerin unit shown in the parentheses, and is from 2 to 60.

Provided is a surface protectant that suppresses corrosion of a semiconductor wafer surface by a basic compound, and reduces defects in the semiconductor wafer. The semiconductor wafer surface protectant of the present invention includes a compound represented by Formula (1) below;
R.sup.1O—(C.sub.3H.sub.6O.sub.2).sub.n—H  (1) where R.sup.1 denotes a hydrogen atom, a hydrocarbon group that has from 1 to 24 carbon atoms and may have a hydroxyl group, or a group represented by R.sup.2CO, where the R.sup.2 denotes a hydrocarbon group having from 1 to 24 carbon atoms; and n indicates an average degree of polymerization of a glycerin unit shown in the parentheses, and is from 2 to 60.

The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2) at least one compound of structure (I): ##STR00001##
3) at least one compound of structure (II): ##STR00002##
and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, R.sub.1-R.sub.7, X, Y, and Z.sub.1-Z.sub.3 in structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.

The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2) at least one compound of structure (I): ##STR00001##
3) at least one compound of structure (II): ##STR00002##
and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, R.sub.1-R.sub.7, X, Y, and Z.sub.1-Z.sub.3 in structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.

An aqueous alkaline chemical mechanical polishing composition includes a quaternary ammonium compound having a phenyl group which enables enhanced reduction of defects on silicon oxide substrates and enables good silicon oxide removal rates during chemical mechanical polishing.

An aqueous alkaline chemical mechanical polishing composition includes a quaternary ammonium compound having a phenyl group which enables enhanced reduction of defects on silicon oxide substrates and enables good silicon oxide removal rates during chemical mechanical polishing.

An aqueous alkaline chemical mechanical polishing composition includes a quaternary ammonium compound having a phenyl group which enables enhanced reduction of defects on silicon oxide substrates and enables good silicon oxide removal rates during chemical mechanical polishing.

An aqueous alkaline chemical mechanical polishing composition includes a quaternary ammonium compound having a phenyl group which enables enhanced reduction of defects on silicon oxide substrates and enables good silicon oxide removal rates during chemical mechanical polishing.

The present disclosure provides a new corrosion control chemistry for use in ruthenium (Ru) chemical-mechanical polishing (CMP) processes. More specifically, the present disclosure provides an improved CMP slurry chemistry and CMP process for planarizing a ruthenium surface. In the CMP process disclosed herein, a ruthenium surface (e.g., a post-etch ruthenium surface) is exposed to a CMP slurry containing a halogenation reagent, which reacts with the ruthenium surface to create a halogenated ruthenium surface, and a ligand for ligand-assisted reactive dissolution of the halogenated ruthenium surface. Relative amounts of the halogenation agent and the ligand can be controlled in the CMP slurry, so as to provide a diffusion-limited etch process that improves pos-etch surface morphology, while providing high material removal rates.