The present invention relates to an etching composition for selectively etching a silicon nitride layer. The etching composition includes an inorganic acid, an epoxy-based silicon compound, and water. The etching composition of the present invention selectively removes a silicon nitride layer while minimizing damage to an underlying metal layer and preventing a silicon oxide layer from being etched.

The present invention relates to an etching composition for selectively etching a silicon nitride layer. The etching composition includes an inorganic acid, an epoxy-based silicon compound, and water. The etching composition of the present invention selectively removes a silicon nitride layer while minimizing damage to an underlying metal layer and preventing a silicon oxide layer from being etched.

The disclosed and claimed subject matter relates to wet etchants exhibiting high copper and cobalt etching rates where the etching rate ratio between the two metals can be varied. The wet etchants have a composition comprising a formulation consisting of: at least one alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent with the amino and hydroxyl substituents attached to two different carbon atoms; at least one pH adjuster for adjusting the pH of the formulation to between approximately 9 and approximately 12; at least one chelating agent; and water.

The disclosed and claimed subject matter relates to wet etchants exhibiting high copper and cobalt etching rates where the etching rate ratio between the two metals can be varied. The wet etchants have a composition comprising a formulation consisting of: at least one alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent with the amino and hydroxyl substituents attached to two different carbon atoms; at least one pH adjuster for adjusting the pH of the formulation to between approximately 9 and approximately 12; at least one chelating agent; and water.

The present invention provides a treatment liquid exhibiting excellent selectivity in dissolving SiGe in a case where the SiGe is etched with the treatment liquid. The present invention also provides a treatment liquid container relating to the treatment liquid.

The treatment liquid according to an embodiment of the present invention contains a fluoride ion source, an oxidant, an acetate solvent, and an additive, in which the additive is an additive that does not contain a Si atom.

The present invention provides a treatment liquid that allows a treated portion to have excellent smoothness in a case where SiGe is etched with the treatment liquid. The present invention also provides a treatment liquid container relating to the treatment liquid.

The treatment liquid according to an embodiment of the present invention contains a fluoride ion source, an oxidant, and an additive, in which the additive is one or more kinds of substances selected from the group consisting of predetermined compounds.

Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed.

According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface on which the metal film and silicon are exposed.

The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed.

According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface on which the metal film and silicon are exposed.