The present invention provides a treatment liquid exhibiting excellent selectivity in dissolving SiGe in a case where the SiGe is etched with the treatment liquid. The present invention also provides a treatment liquid container relating to the treatment liquid.

The treatment liquid according to an embodiment of the present invention contains a fluoride ion source, an oxidant, an acetate solvent, and an additive, in which the additive is an additive that does not contain a Si atom.

The present invention provides a treatment liquid exhibiting excellent selectivity in dissolving SiGe in a case where the SiGe is etched with the treatment liquid. The present invention also provides a treatment liquid container relating to the treatment liquid.

The treatment liquid according to an embodiment of the present invention contains a fluoride ion source, an oxidant, an acetate solvent, and an additive, in which the additive is an additive that does not contain a Si atom.

The present invention provides a treatment liquid that allows a treated portion to have excellent smoothness in a case where SiGe is etched with the treatment liquid. The present invention also provides a treatment liquid container relating to the treatment liquid.

The treatment liquid according to an embodiment of the present invention contains a fluoride ion source, an oxidant, and an additive, in which the additive is one or more kinds of substances selected from the group consisting of predetermined compounds.

The present invention provides a treatment liquid that allows a treated portion to have excellent smoothness in a case where SiGe is etched with the treatment liquid. The present invention also provides a treatment liquid container relating to the treatment liquid.

The treatment liquid according to an embodiment of the present invention contains a fluoride ion source, an oxidant, and an additive, in which the additive is one or more kinds of substances selected from the group consisting of predetermined compounds.

The present disclosure provides an etching composition for a metal nitride layer and an etching method of a metal nitride layer using the same, and more particularly, to an etching composition for a metal nitride layer selectively etching the metal nitride layer, an etching method of a metal nitride layer using the etching composition, and a method of manufacturing a microelectronic device, the method including an etching process performed using the etching composition.

The present disclosure provides an etching composition for a metal nitride layer and an etching method of a metal nitride layer using the same, and more particularly, to an etching composition for a metal nitride layer selectively etching the metal nitride layer, an etching method of a metal nitride layer using the etching composition, and a method of manufacturing a microelectronic device, the method including an etching process performed using the etching composition.

A method of manufacturing a semiconductor package, the method including providing a first seed layer on an insulation layer such that the first seed layer includes a first metal material; providing a second seed layer on the first seed layer such that the second seed layer includes a second metal material different from the first metal material; forming photoresist patterns on the second seed layer; forming conductive patterns between the photoresist patterns, including the second metal material, and having line shapes that extend in a first direction; removing the photoresist patterns; etching the second seed layer to form second seed patterns having line shapes extending in the first direction; and etching the first seed layer to form first seed patterns having line shapes extending in the first direction, wherein an etchant includes deionized water, a fluorine compound, a competing compound, and a corrosion inhibitor.

An etchant composition for preparing graphene having low sheet resistance includes sulfuric acid, hydrogen peroxide, an N-heterocyclic aromatic compound, aromatic boric acid, and purified water. The etchant composition exhibits an effect of remarkably reducing the sheet resistance of graphene produced through chemical vapor deposition (CVD).

An etchant for etching a cobalt-containing member in a semiconductor structure includes a fluorine-free acid and an alkaline solution, a rate of etching a cobalt-containing member by the etchant is greater than a rate of etching a nitride-containing member by the etchant, and a level of dissolved oxygen of the etchant is less than or equal to 100 ppb. A semiconductor structure, includes a plurality of epitaxial structures over a substrate, a gate structure over the substrate and between two of the plurality of epitaxial structures; a cobalt-containing member over one of the epitaxial structures and adjacent to the gate structure; and a dielectric member over the cobalt-containing member, wherein a top surface of the cobalt-containing member is formed by etching a portion of the cobalt-containing member using an etchant including a fluorine-free acid and an alkaline solution.

An etchant for etching a cobalt-containing member in a semiconductor structure includes a fluorine-free acid and an alkaline solution, a rate of etching a cobalt-containing member by the etchant is greater than a rate of etching a nitride-containing member by the etchant, and a level of dissolved oxygen of the etchant is less than or equal to 100 ppb. A semiconductor structure, includes a plurality of epitaxial structures over a substrate, a gate structure over the substrate and between two of the plurality of epitaxial structures; a cobalt-containing member over one of the epitaxial structures and adjacent to the gate structure; and a dielectric member over the cobalt-containing member, wherein a top surface of the cobalt-containing member is formed by etching a portion of the cobalt-containing member using an etchant including a fluorine-free acid and an alkaline solution.